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1.Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2.Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Published:2022-01,
Received:25 October 2021,
Revised:11 November 2021,
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Liang GUO, Ya-nan GUO, Jian-kun YANG, et al. Effect of Barrier Height on Modulation Characteristics of AlGaN-based Deep Ultraviolet Light-emitting Diodes. [J]. Chinese Journal of Luminescence 43(1):1-7(2022)
Liang GUO, Ya-nan GUO, Jian-kun YANG, et al. Effect of Barrier Height on Modulation Characteristics of AlGaN-based Deep Ultraviolet Light-emitting Diodes. [J]. Chinese Journal of Luminescence 43(1):1-7(2022) DOI: 10.37188/CJL.20210331.
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