基于双倾斜沟槽结构的O波段单纵模Fabry-Pérot激光器

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "基于双倾斜沟槽结构的O波段单纵模Fabry-Pérot激光器" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "O-band Single Longitudinal Mode Fabry-Pérot Laser Based on Double Slanted Slots Structure" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "姚", "givenname": "中辉", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "YAO", "givenname": "Zhong-hui", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [ "first-author" ], "bio": [ { "lang": "zh", "text": [ "姚中辉(1994-)，男，安徽阜阳人，硕博连读研究生，2017年于太原理工大学获得学士学位，主要从事半导体光电子材料和器件的研究。E-mail: zhyao2018@sinano.ac.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123819&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123823&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123827&type=" } ], "data": [ [ { "name": "text", "data": "姚中辉" }, { "name": "text", "data": "(1994-)，男，安徽阜阳人，硕博连读研究生，2017年于太原理工大学获得学士学位，主要从事半导体光电子材料和器件的研究。E-mail: " }, { "name": "text", "data": "zhyao2018@sinano.ac.cn" } ] ] } ], "email": "zhyao2018@sinano.ac.cn", "deceased": false }, { "name": [ { "lang": "zh", "surname": "陈", "givenname": "红梅", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "CHEN", "givenname": "Hong-mei", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff3", "text": "3" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "张", "givenname": "子旸", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHANG", "givenname": "Zi-yang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" }, { "rid": "aff2", "text": "2" } ], "role": [ "corresp" ], "corresp": [ { "rid": "cor1", "lang": "en", "text": "E-mail: ziyangzhang2014@sinano.ac.cn", "data": [ { "name": "text", "data": "E-mail: ziyangzhang2014@sinano.ac.cn" } ] } ], "bio": [ { "lang": "zh", "text": [ "张子旸(1975-)，男，内蒙古通辽人，博士，研究员，博士研究生导师，2003年于中国科学院半导体研究所获得博士学位，主要从事半导体光电子材料和器件的研制、光子集成器件的研制、低维材料的分子束外延生长的研究。E-mail: zyzhang2014@sinano.ac.cn" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123831&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123834&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123837&type=" } ], "data": [ [ { "name": "text", "data": "张子旸" }, { "name": "text", "data": "(1975-)，男，内蒙古通辽人，博士，研究员，博士研究生导师，2003年于中国科学院半导体研究所获得博士学位，主要从事半导体光电子材料和器件的研制、光子集成器件的研制、低维材料的分子束外延生长的研究。E-mail: " }, { "name": "text", "data": "zyzhang2014@sinano.ac.cn" } ] ] } ], "email": "zyzhang2014@sinano.ac.cn", "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "中国科学技术大学　纳米技术与纳米仿生学院，安徽　合肥　230026", "data": [ { "name": "text", "data": "中国科学技术大学　纳米技术与纳米仿生学院，安徽　合肥　230026" } ] }, { "lang": "en", "label": "1", "text": "School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China", "data": [ { "name": "text", "data": "School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "中国科学院　苏州纳米技术与纳米仿生研究所，江苏　苏州　215123", "data": [ { "name": "text", "data": "中国科学院　苏州纳米技术与纳米仿生研究所，江苏　苏州　215123" } ] }, { "lang": "en", "label": "2", "text": "Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China", "data": [ { "name": "text", "data": "Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China" } ] } ] }, { "id": "aff3", "intro": [ { "lang": "zh", "label": "3", "text": "青岛翼晨镭硕科技有限公司，山东　青岛　266000", "data": [ { "name": "text", "data": "青岛翼晨镭硕科技有限公司，山东　青岛　266000" } ] }, { "lang": "en", "label": "3", "text": "Qingdao Yichen Leishuo Technology Co., Ltd, Qingdao 266000, China", "data": [ { "name": "text", "data": "Qingdao Yichen Leishuo Technology Co., Ltd, Qingdao 266000, China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "基于双倾斜刻蚀沟槽结构成功实现了无需二次外延生长的单纵模Fabry-Pérot(F-P)激光器。分析了F-P谐振腔中存在刻蚀沟槽的谐振条件，沟槽的倾斜有利于获得稳定的单纵模输出。为了进一步研究斜槽宽度对器件输出性能的影响，在保持沟槽倾斜角为4°的前提下，制备了不同斜槽宽度的激光器器件，测试发现，当斜槽的刻蚀宽度为1.5 μm时器件的单模输出性能最佳。该器件在70 mA连续电流注入下展现出了高达40 dB的边模抑制比，并且在不同的电流注入下均保持稳定的单纵模输出。在25~70 ℃的测试范围内，有斜槽时光谱红移速率仅为0.12 nm/℃，远小于无斜槽时0.6 nm/℃的红移速率，进一步证实了斜槽的引入可以有效地实现稳定的单纵模输出，展示出了在光通信应用的潜力。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "The re-growth free single longitudinal mode Fabry-Pérot(F-P) lasers based on etched double slanted slots have been achieved. Firstly, we have analyzed the resonant conditions for the F-P laser with a pair of etched slots, and the stably single longitudinal mode operation can be obtained when the slots are tilted with an angle of 4°. To investigate the effects of the slot widths on the device performance, the laser chips with various slot widths have been fabricated. It has been found that the best single mode performance has been realized of the laser chip with the slot width of 1.5 μm. And the quite stable single mode operation has been achieved with a side mode suppression ratio as high as 40 dB under a continuous-wave current injection of 70 mA for the laser. Under the test temperatures ranging from 20 ℃ to 75 ℃, the lasing wavelength shift rate for the slotted F-P lasers is only 0.12 nm/℃, which is much smaller than 0.6 nm/℃ for the lasers without slots. These results further confirm that a stable single longitudinal mode can be achieved by introducing slots in a F-P laser, which shows great potential for the application of optical communications." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "F-P激光器" } ], [ { "name": "text", "data": "刻蚀槽" } ], [ { "name": "text", "data": "单纵模" } ], [ { "name": "text", "data": "光通信" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "F-P laser" } ], [ { "name": "text", "data": "etched slots" } ], [ { "name": "text", "data": "single longitudinal mode" } ], [ { "name": "text", "data": "optical communications" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "自上世纪六十年代半导体激光器和光纤问世以来，光纤通信的实现引发了信息传输的革命性变化，并取得了极其惊人的进展。特别是近年来，随着云计算、物联网、5G等新兴信息技术的出现，人类社会对于信息流量的需求与日俱增，给光通信领域带来了前所未有的挑战。半导体激光器作为光通信系统的核心部件，是目前光通信发展的重要研究领域之一" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "5", "type": "bibr", "rid": "R5", "data": [ { "name": "text", "data": "5" } ] } } ], "rid": [ "R1", "R2", "R3", "R4", "R5" ], "text": "1-5", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。低成本、低能耗、高速率的半导体激光器是下一代高速光通信系统的理想光源。Fabry-Pérot(F-P)激光器由于其结构简单，可以大规模高效地制造，但是由于其多纵模运行导致的模式分配噪声，极大地限制了在高速网络中的应用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "6", "type": "bibr", "rid": "R6", "data": [ { "name": "text", "data": "6" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } } ], "rid": [ "R6", "R7" ], "text": "6-7", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。分布反馈(Distributed feedback, DFB)激光器作为目前主流的单纵模激光器取得了巨大的成功，不仅拥有较高的边模抑制比(Side-mode suppression ratio,SMSR)，而且可以实现很高的直接调制速率。但是，DFB激光器除了需要极高精度的制备流程和复杂的二次外延生长，还由于器件腔面随机的反射相位，使得成品率往往很低。因此，采用更加简单的制备工艺获取单纵模运行的激光器成为了研究热点。为此，研究人员提出了一种耦合腔的解决方案，其核心是在腔内引入具有一定波长选择性的滤波器，使多余的纵模被损耗掉实现单纵模运行" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } } ], "rid": [ "R8", "R9", "R10", "R11" ], "text": "8-11", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。WANG等在2012年采用深刻蚀的双沟槽F-P(Slotted F-P,SFP)结构实现了SMSR 38 dB、线宽仅为~80 kHz的窄线宽单模F-P激光器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ";Lu等在2011年采用37阶刻蚀沟槽组成表面光栅结构成功实现了SMSR高于50 dB的单纵模激光器，并且通过与电吸收调制器集成实现了消光比超过10 dB、3 dB调制带宽为3 GHz的集成器件" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "；此前，华中科技大学的Li等为了提高器件单纵模运行产率，采用具有一对倾斜沟槽结构的F-P激光器，有效地消除了由刻蚀槽引起的反射光，实现了高达35 dB的边模抑制比，并且实现单模(SMSR" }, { "name": "text", "data": ">" }, { "name": "text", "data": "20 dB)的产率高达55%，经过3 000 h的老化实验证实其性能没有明显的退化，该单模激光器在直接调制速率为6.25 Gbps的速率下经过50 km的标准单模光纤依然能够看到清晰张开的眼图" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。为了满足实际应用需求，需要对基于沟槽结构激光器的单模运行稳定性做进一步的研究。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本工作采用多量子阱激光器外延结构，制备了具有不同沟槽宽度的脊波导F-P激光器，成功实现了SMSR高达40 dB的单纵模F-P腔激光器。并且在不同电流注入和不同温度下分别对SFP器件进行了测试，相比于无斜槽结构的F-P激光器均有更稳定的光谱输出，进一步证实了斜槽的引入成功地实现了稳定单纵模运行。该器件相对DFB激光器制备工艺易实现和较易控制，而且无需二次外延生长，在高速光通讯应用中展示了很大的潜力。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　实验" } ], "level": "1", "id": "s2" } }, { "name": "p", "data": [ { "name": "text", "data": "SFP激光器是通过刻蚀技术在激光器波导结构上引入折射率微扰实现的，刻蚀槽的引入可以对FP腔的镜面损耗进行调制，从而对腔内某一个增益模式起到增强作用而对其他模式起抑制作用，最终实现单纵模运行。" }, { "name": "xref", "data": { "text": "图1(a)", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1(a)" } ] } }, { "name": "text", "data": "是SFP激光器结构示意图，其中沟槽宽度、刻蚀深度、间距等是影响激光器性能的关键参数，需要在设计中进行优化。对于SFP激光器，其谐振光波长满足" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ":" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "SFP器件结构示意图(a)和显微镜图(b)(插图:MQW外延结构示意图)" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "Schematic diagram(a) and the microscopic image(b) of the SFP device(inset: schematic diagram of the MQW epitaxial structure)" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123840&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123843&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123842&type=" } ] } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(1)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123847&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123850&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123853&type=" } } } ], "id": "DF1" } }, { "name": "p", "data": [ { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": "是沟槽间隔，" }, { "name": "italic", "data": [ { "name": "text", "data": "λ" } ] }, { "name": "text", "data": "为自由空间波长，" }, { "name": "italic", "data": [ { "name": "text", "data": "n" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "eff" } ] }, { "name": "text", "data": "代表波导有效折射率。通过优化沟槽的间隔和刻蚀宽度可以控制器件的激射波长以及提升单模性能。为了实现高效率的单模特性，本工作对耦合腔模型的激射条件进行分析，在F-P腔内传播的平面波用下式表示:" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(2)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123857&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123858&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123863&type=" } } } ], "id": "DF2" } }, { "name": "p", "data": [ { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "g" } ] }, { "name": "sup", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "m" } ] } ] }, { "name": "italic", "data": [ { "name": "text", "data": "=g-α" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "," }, { "name": "italic", "data": [ { "name": "text", "data": "g" } ] }, { "name": "text", "data": "是增益系数，" }, { "name": "italic", "data": [ { "name": "text", "data": "α" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "i" } ] }, { "name": "text", "data": "是内部损耗系数，对于一个长度为" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "的F-P腔，其能够形成自持振荡的条件，可以用下式表示" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ":" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(3)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123864&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123869&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123872&type=" } } } ], "id": "DF3" } }, { "name": "p", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "是谐振腔两个腔面的反射率。由于本工作在F-P腔内引入了刻蚀槽的微扰结构，因此耦合腔的激射条件，可以写为" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ":" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(4)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123875&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123876&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123881&type=" } } } ], "id": "DF4" } }, { "name": "p", "data": [ { "name": "text", "data": "其中" }, { "name": "italic", "data": [ { "name": "text", "data": "r" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "12" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "r" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "21" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "t" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "12" } ] }, { "name": "text", "data": "、" }, { "name": "italic", "data": [ { "name": "text", "data": "t" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "21" } ] }, { "name": "text", "data": "分别表示从左到右和从右到左经过双沟槽的反射率和透射率，" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": "代表激光器的腔面反射率。" }, { "name": "italic", "data": [ { "name": "text", "data": "φ" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1,2" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "=" } ] }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123884&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123890&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123887&type=" } } } ] }, { "name": "italic", "data": [ { "name": "text", "data": "+" } ] }, { "name": "text", "data": "i" }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123892&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123898&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123896&type=" } } } ] }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1,2" } ] }, { "name": "text", "data": "，其中" }, { "name": "italic", "data": [ { "name": "text", "data": "L" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "1,2" } ] }, { "name": "text", "data": "分别是沟槽左边和右边的腔长。对于传统的F-P激光器而言，" }, { "name": "italic", "data": [ { "name": "text", "data": "r" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "12" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "=r" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "21" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "=" } ] }, { "name": "text", "data": "0," }, { "name": "italic", "data": [ { "name": "text", "data": "t" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "12" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "=t" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "21" } ] }, { "name": "italic", "data": [ { "name": "text", "data": "=" } ] }, { "name": "text", "data": "1，因此激射条件由公式(4)化简可得经典的F-P腔谐振条件" }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "inlineformula", "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123902&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123907&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123903&type=" } } } ] }, { "name": "italic", "data": [ { "name": "text", "data": "=" } ] }, { "name": "text", "data": "1，与公式(3)相同。为了提高耦合腔激光器的选模特性，我们将腔内的沟槽倾斜一个角度，使沟槽引起的反射光引导至腔外，进一步提高器件的单模运行特性。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "基于上述的理论推导，我们制备了具有倾斜角度的沟槽，倾斜角度和间距分别为4°和10 μm" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，沟槽宽度分别为1,1.5,2 μm的SFP激光器，如" }, { "name": "xref", "data": { "text": "图1(a)", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1(a)" } ] } }, { "name": "text", "data": "所示。多量子阱(Multiple quantum well,MQW)外延结构示意图如" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "插图所示，我们采用具有更高导带带阶比的AlGaInAs/InP材料体系，但是由于有源区中含有Al元素，为了避免刻蚀过程中造成器件性能劣化，我们将沟槽的刻蚀深度限制在有源区上方，均停止于多量子阱有源区上方200 nm处。为了保证脊波导和刻蚀斜槽的精度，我们在光刻阶段对脊波导和斜槽分别进行曝光，通过不断地优化曝光、显影参数，最终得到了同时满足脊波导和斜槽的工艺条件。之后采用ICP干法刻蚀同时完成刻蚀，极大地简化了制备工艺。然后，采用等离子体增强化学气相沉积方法沉积了350 nm的SiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "电绝缘层。再利用光刻和反应离子刻蚀技术在脊波导(3 μm)顶部制备1 μm的电注入窗口，随后采用磁控溅射蒸镀Ti/Au(50/350 nm)的正面电极。为了减小器件的热效应，将衬底减薄并抛光至110 μm，再通过电子束蒸发沉积Ni/AuGe/Ni/Au(5/100/35/250 nm)的背面电极。为了使电极形成良好的欧姆接触，又将该器件在N" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "氛围下进行快速热退火处理。最后把器件焊在蒸有In焊料的无氧铜上进行测试，所有测试均在室温连续电流下进行。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　分析与讨论" } ], "level": "1", "id": "s3" } }, { "name": "p", "data": [ { "name": "text", "data": "斜槽刻蚀宽度分别为1,1.5,2 μm的光谱如" }, { "name": "xref", "data": { "text": "图2(a)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(a)" } ] } }, { "name": "text", "data": "所示，从图中可以看出斜槽宽度为2 μm时出现了双模激射，选模效果较差。造成这一现象的主要原因是当波导内的光波传导通过浅刻蚀沟槽时，沟槽导致光束能量被挤压向下偏移，使得光波经过沟槽后其光斑中心与波导中心不对称，引入额外的损耗，如" }, { "name": "xref", "data": { "text": "图2(b)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(b)" } ] } }, { "name": "text", "data": "所示。而且由于宽度过大导致经过沟槽的散射变大，降低了整个谐振腔光波的耦合性，无法为谐振腔提供足够的反馈，因此影响器件选模特性，同时造成的过大损耗降低了器件的输出特性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。当斜槽的宽度为1 μm时，可以看出明显的单模激射，但是边模抑制比很低。理论上，宽度越小时器件的耦合性越强，并且在谐振腔内的光束经过沟槽时，其能量未散射出器件外就会被重新回收到波导内，更加有利于实现高输出性能的单纵模激光器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。但是，由于器件工艺制备过程中，斜槽和波导是同时实现的，因而对光刻精度和干法刻蚀都有很高的要求，因此制备1 μm斜槽在工艺上存在较大的困难。在实际的制备中，斜槽在刻蚀过程中不平直，导致器件性能与理论有较大差距。当斜槽的宽度为1.5 μm时，可以看到器件具有优异的单纵模输出，这得益于器件结构的整体设计以及优良的制备工艺，从" }, { "name": "xref", "data": { "text": "图1(b)", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1(b)" } ] } }, { "name": "text", "data": "中也可以看出宽度为1.5 μm的斜槽具有平直的形貌。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "(a)SFP器件不同沟槽宽度的光谱；(b)光波在SFP腔内传播示意图。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "(a)Optical spectra of SFP devices with different slot width. (b)Schematic illustrating of light wave propagations in a SFP laser." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123911&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123915&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123914&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "　如" }, { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "所示，我们对斜槽宽度为1.5 μm的器件进一步测试了不同电流注入下的输出光谱，并且对比有无沟槽器件的功率-电流-电压(Power-current-voltage,PIV)特性。由" }, { "name": "xref", "data": { "text": "图3(a)", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3(a)" } ] } }, { "name": "text", "data": "可以看出，无斜槽时器件的阈值电流为23 mA，斜率效率为0.23 mW/mA，斜槽的引入使器件的阈值电流增大至39 mA，同时器件输出功率的斜率效率减小至0.19 mW/mA。斜槽的引入降低了器件的输出特性，主要源于斜槽刻蚀宽度过大增加了腔内光散射引入了额外损耗。而在文献[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]中对比有无斜槽并没有明显改变器件的输出特性，主要是由于斜槽宽度不同导致的。由于本工作刻蚀条件的限制只能制备出斜槽宽度为1.5 μm的器件，相对于1 μm的宽度而言，较宽的斜槽宽度导致光波在传输时被斜槽散射出波导外的光波不能有效地再被波导收集，造成了较大的损耗，因此引起了阈值电流增加以及斜率效率降低。但是，从" }, { "name": "xref", "data": { "text": "图3(b)", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3(b)" } ] } }, { "name": "text", "data": "中可以看出，对于斜槽宽度为1.5 μm的器件，在不同的电流注入下依旧能保持良好的单模特性，得益于该器件适中的斜槽参数和较容易的制备工艺。" }, { "name": "xref", "data": { "text": "图3(b)", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3(b)" } ] } }, { "name": "text", "data": "插图为器件输出光谱峰位以及SMSR在不同电流注入下的变化曲线，由于随着注入电流的增加，器件产生的焦耳热导致波导的有效折射率变化，因此随着注入电流的增加光谱峰位以0.03 nm/mA的速率红移。注入电流在50~90 mA范围内SMSR均大于30 dB,70 mA注入时实现了高达40 dB的SMSR。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "(a)有斜槽和无斜槽激光器的PIV曲线；(b)斜槽宽度1.5 μm的SFP器件在不同电流注入下的光谱。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "text", "data": "(a)PIV curves of lasers with and without slots. (b)Optical spectra of SFP devices with slot width of 1.5 μm under various injection currents." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123917&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123921&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123919&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "　为了进一步验证器件输出光谱的温度稳定性，我们在25~70 ℃范围内对其输出光谱进行了测试表征，如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "所示，其中F-P激光器的注入电流均为50 mA,SFP激光器的注入电流均为70 mA。" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "为有无斜槽时激光器光谱峰位和温度的关系，无斜槽结构时峰位的红移速率约为0.6 nm/℃，与典型F-P激光器随温度红移速率一致。主要原因是有源区带隙随温度的变化规律所致(一般可用Varshni公式表示)，随温度升高，半导体的带隙减小。当存在斜槽结构时，SFP激光器峰位的红移速率仅为~0.12 nm/℃，主要是由于折射率随温度变化而改变引起的，如此小的峰位红移速率进一步证实了斜槽的引入能够有效地实现稳定的单纵模输出。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "无斜槽激光器(a)和斜槽宽度为1.5 μm的SFP器件(b)在不同温度下的光谱" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "Optical spectra of lasers without slots(a) and SFP devices with slots width of 1.5 μm(b) under various temperature" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123924&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123928&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123926&type=" } ] } }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "有无斜槽时激光器发光波长与温度的关系" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "Temperature dependence of the emission wavelength of lasers with and without slots" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123929&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123934&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=22123931&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本工作通过在传统脊波导F-P激光器上刻蚀倾斜沟槽结构，实现了稳定的单纵模输出。同时基于现有的工艺条件成功制备了斜槽宽度为1.5 μm、倾斜角度为4°的激光器器件，并且在腔长为350 μm、连续工作电流为70 mA下，成功地实现了高达40 dB的SMSR，另外发现器件在不同的注入电流下均保持稳定的单模输出。斜槽的引入也使F-P激光器的温度稳定性得到了显著的提高，在25~70 ℃的范围内红移速率仅为0.12 nm/℃。与DFB半导体激光器相比，较为简单和较易控制的制备工艺、且无需复杂的二次外延即可实现稳定的单纵模输出，展示了斜槽F-P激光器在光通讯领域的巨大应用价值。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文专家审稿意见及作者回复内容的下载地址:http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20210263." } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献:" } ], "data": [ { "id": "R1", "label": "[1]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "NAKAHARA K" }, { "name": "text", "data": ", " }, { "name": "text", "data": "WAKAYAMA Y" }, { "name": "text", "data": ", " }, { "name": "text", "data": "KITATANI T" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". 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