基于电场调控的高性能紫外无机-有机复合结构光电探测器 增强出版

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{ "rid": "aff1", "text": "1" } ], "role": [], "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "闽江学院　物理与电子信息工程学院，福建　福州　350108", "data": [ { "name": "text", "data": "闽江学院　物理与电子信息工程学院，福建　福州　350108" } ] }, { "lang": "en", "label": "1", "text": "College of Physics & Electronics Information Engineering, Minjiang University, Fuzhou 350108, China", "data": [ { "name": "text", "data": "College of Physics & Electronics Information Engineering, Minjiang University, Fuzhou 350108, China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "重庆邮电大学　光电工程学院，重庆　400065", "data": [ { "name": "text", "data": "重庆邮电大学　光电工程学院，重庆　400065" } ] }, { "lang": "en", "label": "2", "text": "College of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China", "data": [ { "name": "text", "data": "College of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "通过溶液旋涂制备了结构为ITO/ZnO/P3HT∶ITIC/Ag的紫外无机-有机复合结构光电探测器，混合膜中聚合物给体(P3HT)和非富勒烯小分子受体(ITIC)的质量比为100∶1。由于载流子传输通道不连续，器件在零偏压下的暗电流密度很小，为5.8×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-10" } ] }, { "name": "text", "data": " A·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "，为器件实现外加电场可调和光电流倍增提供了条件。在正向偏压作用下，氧化锌(ZnO)界面层能吸收紫外光产生自由电子和空穴参与载流子输运(减少载流子复合几率)，从而提升器件的外量子效率(EQE)。随正向偏压的增加，ZnO界面层能够与活性层(P3HT∶ITIC)共同作用使器件的光电流倍增。45 V偏压下，器件在350 nm处可获得最小半高宽约为49 nm的EQE光谱响应峰，最高EQE、响应度和探测灵敏度分别为420000%、1 185 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "和1.8×10" }, { "name": "sup", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": " Jones。上述结果为制备基于电场调控的高性能紫外窄带无机-有机复合结构光电探测器提供了有效策略。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "The ultraviolet inorganic-organic composite structure photodetectors with an architecture of ITO/ZnO/P3HT∶ITIC/Ag were fabricated by a solution spin-coating method. In the blended film, the weight ratio of polymer donor(P3HT) to non-fullerene small molecule acceptor(ITIC) is 100∶1. Due to the discontinuity of carrier transport-channel, the dark current density of devices under zero bias voltage is very small(5.8×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-10" } ] }, { "name": "text", "data": " A·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "), which provides the condition for devices to realize the external electric-field adjustable and photocurrent multiplied. Under forward bias voltages, the free electrons and holes generated by the zinc oxide(ZnO) interfacial layer through absorbing ultraviolet light can participate in carrier transport(reducing the probability of carrier recombination), thereby improving the external quantum efficiency(EQE) of devices. With the increase of forward bias voltages, ZnO interfacial layer can work together with active layer(P3HT∶ITIC) to multiply the photocurrent of devices. Under 45 V bias, the EQE spectral response-peak with a minimum half height width of about 49 nm can be obtained by devices at 350 nm, with the highest EQE, responsivity and detectivity of 420000%, 1 185 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": " and 1.8×10" }, { "name": "sup", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": " Jones, respectively. The above content provides an effective strategy to fabricate high-performance ultraviolet narrowband inorganic-organic composite structure photodetectors based on electric-field adjustment." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "溶液旋涂" } ], [ { "name": "text", "data": "紫外" } ], [ { "name": "text", "data": "无机-有机复合" } ], [ { "name": "text", "data": "光电探测器" } ], [ { "name": "text", "data": "氧化锌" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "solution spin-coating" } ], [ { "name": "text", "data": "ultraviolet" } ], [ { "name": "text", "data": "inorganic-organic composite" } ], [ { "name": "text", "data": "photodetector" } ], [ { "name": "text", "data": "zinc oxide" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "1" } ], "title": [ { "name": "text", "data": "引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "光电探测器广泛应用于成像系统、人工视觉系统、环境监测以及远程监控等领域" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "3", "type": "bibr", "rid": "R3", "data": [ { "name": "text", "data": "3" } ] } } ], "rid": [ "R1", "R2", "R3" ], "text": "1-3", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。由于有机半导体独特的特性，例如质量轻、优越的机械柔韧性和吸收光谱可调等，有机光电探测器受到广泛关注" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "4", "type": "bibr", "rid": "R4", "data": [ { "name": "text", "data": "4" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } } ], "rid": [ "R4", "R5", "R6", "R7", "R8" ], "text": "4-8", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。按照光谱响应范围，有机光电探测器可分为宽光谱响应和波长选择性器件。理想的宽光谱响应有机光电探测器希望获得高外量子效率(EQE)且光谱响应均匀，而波长选择性有机光电探测器要求在特定波长范围内的EQE显著大于该波长范围外的EQE且响应峰的半高宽小" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。根据EQE的大小，二极管结构有机光电探测器也可分为二极管型(EQE小于100%)和倍增型(EQE远超100%)器件。相同偏压下，倍增型有机光电探测器的暗电流密度(" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": ")较小，对弱光的探测能力强。随偏压增加，倍增型有机光电探测器不需要额外的前置放大电路就能对弱光电流信号进行放大，可简化测量系统并降低成本" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。然而，要制备半高宽小于100 nm的倍增型波长选择性有机光电探测器仍是一个大的挑战。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "紫外光电探测器在化学、环境和生物分析检测、火灾和辐射探测、天文学研究、导弹探测以及光通信等领域有重要的应用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "11", "type": "bibr", "rid": "R11", "data": [ { "name": "text", "data": "11" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } } ], "rid": [ "R11", "R12", "R13" ], "text": "11-13", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。近年来，以无机纳米粒子(ZnO或TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": ")为电子陷阱来增强外电路空穴注入的有机-无机杂化紫外光电探测器已经能够实现光电流倍增，在紫外光区获得远超100%的EQE。黄课题组将ZnO纳米颗粒和聚合物P3HT相混合作为活性层制备了倍增型光电探测器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。-9 V偏压下，器件在360 nm处可获得的最高EQE为340600%；但是，器件EQE光谱并没有呈现显著的紫外波长选择性响应。Sawyer课题组报道了将TiO" }, { "name": "sub", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "纳米颗粒与有机半导体材料共混作为活性层的紫外波长选择性倍增型有机-无机杂化光电探测器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。-10 V偏压下，器件在351 nm处可获得最高为85000%的EQE。余课题报道了ZnO纳米颗粒与有机半导体材料共混的紫外波长选择性倍增型有机-无机杂化光电探测器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。-15 V偏压下，器件在360 nm处获得的最高EQE为2720%。但是，有机-无机杂化紫外倍增型有机光电探测器中的无机纳米粒子容易聚集，并且器件的性能有待进一步提升。溶胶凝胶法制备的ZnO通常作为倍增型有机光电探测器(活性层经80 ℃加热20 s)的界面层，虽然能够吸收紫外光产生光生电子和空穴参与载流子输运，提高器件的EQE，但是器件EQE光谱并没有呈现紫外波长选择性响应" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "18", "type": "bibr", "rid": "R18", "data": [ { "name": "text", "data": "18" } ] } } ], "rid": [ "R17", "R18" ], "text": "17-18", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文通过溶液旋涂制备了结构为ITO/ZnO/P3HT∶ITIC(100∶1)/Ag的紫外波长选择性倍增型无机-有机复合结构光电探测器。其中溶胶凝胶法制备的ZnO既能作为器件的界面层阻挡正向偏压下外电路空穴经ZnO与P3HT间的界面隧穿注入活性层，又能够吸收紫外光产生光生电子和空穴参与载流子输运，提高器件的性能。在外加电场调控下，器件EQE光谱呈现显著的紫外波长选择性响应，并且光谱响应峰的半高宽随偏压(电场)增大而减小。45 V偏压下，器件在350 nm处可获得的EQE光谱响应峰的半高宽仅为49 nm，最高EQE、响应度与探测灵敏度分别为420000%、1 185 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "和1.8×10" }, { "name": "sup", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": " Jones。上述方法提供了一种制备基于电场调控的高性能紫外窄带无机-有机复合结构光电探测器的有效策略。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2" } ], "title": [ { "name": "text", "data": "实验" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.1" } ], "title": [ { "name": "text", "data": "器件制备" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "刻蚀ITO电极的玻璃(20 mm×20 mm,15 Ω·□" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ")分别用去离子水(加洗涤剂)、丙酮以及异丙醇各超声波清洗20 min后，放入烘箱70 ℃过夜烘干。将预先经过充分搅拌的ZnO溶液(0.23 mol·mL" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，醋酸锌颗粒溶解于2-甲氧基乙醇与乙醇胺混合溶剂)以2 800 r·min" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": " (50 s)旋涂到预先经过15 min紫外臭氧处理的ITO玻璃上，经烘箱200 ℃加热1 h处理形成厚约35 nm的界面层，自然冷却后转移到充满氮气的手套箱中。接着，将溶解于1,2-二氯苯并经过充分搅拌的P3HT∶ITIC(100∶1)溶液(40 mg·mL" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ")以580 r·min" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "(30 s) 旋涂到ZnO界面层上，经自然晾干后形成厚度约为260 nm的活性层。最后，真空蒸镀厚度约100 nm的Ag电极(真空度小于1×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] }, { "name": "text", "data": " Pa)，器件有效面积~ 4 mm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "。P3HT和ITIC均购买于北京百灵威科技有限公司。" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "为材料分子结构以及器件结构示意图。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "(a)P3HT分子结构；(b)ITIC分子结构；(c)器件结构示意图。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 1" } ], "title": [ { "name": "text", "data": "(a)Molecular structure of P3HT. (b)Molecular structure of ITIC. (c)Schematic diagram of device structure." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777550&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777557&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777552&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "2.2" } ], "title": [ { "name": "text", "data": "器件表征" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "器件的电流密度-电压(" }, { "name": "italic", "data": [ { "name": "text", "data": "J-V" } ] }, { "name": "text", "data": ")曲线用Keithley 2636B 光电数据采集系统进行测量，入射光由太阳光模拟器提供并通过滤网进行强度调节，光强由Ophir VEGA手持光功率计进行测量。器件 EQE 光谱数据由Keithley 2636B 光电数据采集系统与 Zolix 光电探测器测试系统共同采集。室温下的材料吸收光谱由Lambda365紫外-可见分光光度计进行测量。器件活性层和界面层厚度通过Bruker Dektak XT 台阶仪进行测量。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3" } ], "title": [ { "name": "text", "data": "结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.1" } ], "title": [ { "name": "text", "data": "材料能级和吸收光谱" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "text", "data": "材料能级示意图如" }, { "name": "xref", "data": { "text": "图2(a)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(a)" } ] } }, { "name": "text", "data": "所示。活性层中，少量的电子受体(ITIC)被大量的电子给体(P3HT)包围。由于ITIC的最低未占据分子轨道(LUMO)能级与P3HT的LUMO能级间的差异为~ 0.88 eV，可将被P3HT包围的少量ITIC分子看作电子陷阱，电子传输通道不连续。反向偏压下，外电路空穴经Ag电极和P3HT间的界面隧穿注入活性层，不仅要克服Ag电极功函数和P3HT的HOMO能级间的差异~0.5 eV，还要克服P3HT的HOMO能级和ZnO的价带间约2.6 eV的势垒，才可能被ITO电极收集形成电流。正向偏压下，外电路空穴经ZnO与P3HT间的界面隧穿注入活性层要克服ITO电极功函数和ZnO的价带间约3.0 eV的差异，才可能被Ag电极收集形成电流。此外，活性层的主要成分P3HT经加热处理后其空穴传输能力能够增强，从而提升器件的亮电流，但同时也会增加器件的暗电流" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "17", "type": "bibr", "rid": "R17", "data": [ { "name": "text", "data": "17" } ] } }, { "name": "text", "data": "," }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。因此，活性层自然晾干(未经加热处理)的器件" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": "比经加热处理的器件更小，器件外加电场可调节的范围更宽。材料(薄膜)的归一化吸收光谱如" }, { "name": "xref", "data": { "text": "图2(b)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(b)" } ] } }, { "name": "text", "data": "所示。ZnO界面层对光的吸收主要集中于紫外光区，而有机半导体材料P3HT和ITIC对光的吸收范围覆盖紫外到近红外光区，三种材料的吸收光谱在300~400 nm范围内重叠。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "(a)材料能级示意图；(b)材料(薄膜)的归一化吸收光谱。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 2" } ], "title": [ { "name": "text", "data": "(a)Schematic diagram of material energy levels. (b)Normalized absorption spectra of materials (thin films)." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777559&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777568&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777564&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.2" } ], "title": [ { "name": "text", "data": "器件" }, { "name": "italic", "data": [ { "name": "text", "data": "J-V" } ] }, { "name": "text", "data": "曲线" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图3", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3" } ] } }, { "name": "text", "data": "为不同光强下器件的" }, { "name": "italic", "data": [ { "name": "text", "data": "J-V" } ] }, { "name": "text", "data": "曲线。正向和反向偏压下，器件的" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": "都很小，是由于:(1)无光条件下，大的外电路空穴隧穿注入与传输势垒限制空穴注入传输形成电流；(2)活性层中，电子传输通道不连续，限制电子传输形成电流。因此，无光条件下，空穴传输形成的电流和电子传输形成的电流都很有限，器件的" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": "都很小。15 V正向偏压下的器件" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": "(6.7×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-7" } ] }, { "name": "text", "data": " A·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": ")比-15 V反向偏压下的器件" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": "(8.2×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-6" } ] }, { "name": "text", "data": " A·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": ")小1个数量级以上，是由于正向偏压下空穴隧穿注入与传输势垒比反向偏压下的大。更小的" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": "有利于通过更大范围内调节外加电场来调控器件的性能。器件的光电流密度(" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": ")随入射光强的增强或偏压的增加而变大，归因于从Ag或ITO电极隧穿注入的空穴增多。相同入射光强下，较大的偏压产生的电场与被电子陷阱捕获在电极附近的光生电子产生的库伦电场方向一致，更有利于辅助外电路空穴的隧穿注入" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。并且，偏压产生的电场有利于光生电子和空穴的分离，可减少载流子复合几率，并加速空穴在活性层中的传输。相同偏压下，器件的" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "比" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "d" } ] }, { "name": "text", "data": "大约2~3个数量级，表明器件对入射光有较好的响应。入射光强越强，单位时间内活性层中产生的光生电子和空穴越多，被电子陷阱捕获在电极附近辅助外电路空穴隧穿注入的光生电子越多，光电流越大。器件在正向偏压下的" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "小于器件在反向偏压下的" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "，与不同方向偏压下空穴隧穿注入传输的势垒不同相关。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "器件" }, { "name": "italic", "data": [ { "name": "text", "data": "J-V" } ] }, { "name": "text", "data": "曲线" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "italic", "data": [ { "name": "text", "data": "J-V" } ] }, { "name": "text", "data": " curves of the device" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777571&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777578&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777575&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.3" } ], "title": [ { "name": "text", "data": "器件光谱响应特性" } ], "level": "2", "id": "s3c" } }, { "name": "p", "data": [ { "name": "text", "data": "为了研究溶胶凝胶法制备的ZnO界面层对紫外无机-有机复合结构光电探测器光电性能的影响，测量了器件在正向偏压下的EQE光谱，如" }, { "name": "xref", "data": { "text": "图4", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4" } ] } }, { "name": "text", "data": "所示。器件EQE随正向偏压的增加而增大。特别是45 V偏压下，器件在350 nm处展现显著的紫外波长选择性响应，器件在350 nm附近的EQE显著大于其他波长处的EQE。器件EQE(" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "EQE" } ] }, { "name": "text", "data": ")通过以下公式进行计算:" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(1)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777580&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777584&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777587&type=" } } } ], "id": "DF1" } }, { "name": "text", "data": "其中，" }, { "name": "italic", "data": [ { "name": "text", "data": "hν" } ] }, { "name": "text", "data": "是单光子能量，" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "in" } ] }, { "name": "text", "data": "是入射光强，" }, { "name": "italic", "data": [ { "name": "text", "data": "q" } ] }, { "name": "text", "data": "是单电子电量绝对值。" }, { "name": "xref", "data": { "text": "图4(a)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(a)" } ] } }, { "name": "text", "data": "为不同偏压下的器件EQE光谱，偏压每增加5 V重复测量一次。外加偏压很小时，靠近ITO电极的材料吸收光子产生的光生电子和空穴发生复合的几率大于被相应的电极收集形成电流的几率，光生载流子存在较大的复合损失" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。随正向偏压的增大，外加电场有利于辅助外电路空穴从ITO电极隧穿注入活性层，并促进活性层中光生电子和空穴的分离(减少载流子复合几率)，增加器件的光电流，从而提升器件的EQE。在外加正向电场的作用下，器件ZnO界面层吸收紫外光产生的光生电子和空穴能参与载流子输运(降低载流子复合几率)，提升器件的EQE。当外加偏压小于等于20 V时，器件EQE随偏压的增加而增大，与正向偏压下的器件光电流随偏压增加而增大的现象和原因一致，来自于ZnO界面层和活性层光电流倍增的贡献。虽然器件的EQE随偏压(≤20 V)的增加而逐渐增大，但是器件在紫外光区(350 nm附近)的EQE与可见光区的EQE并无显著区别。" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "(a)不同偏压下的器件EQE光谱；(b)不同偏压下的器件归一化EQE光谱。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 4" } ], "title": [ { "name": "text", "data": "(a)EQE spectra of the device under different bias voltages. (b)Normalized EQE spectra of the device under different bias voltages." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777593&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777603&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777596&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "当外加偏压大于等于25 V时，随偏压增加，虽然器件在可见到近红外光区的EQE也增加，但是明显小于器件在紫外光区(350 nm附近)的EQE。不同正向偏压下(25~45 V)，器件在350 nm和690 nm处的EQE如" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "所示。45 V偏压下，器件在350 nm处可获得高达420000%的EQE，是相同条件下器件在690 nm处EQE(39300%)的10.7倍，并呈现一个显著的半高宽仅为49 nm的EQE光谱波长选择性响应峰。并且，器件在350 nm附近的EQE光谱响应峰半高宽随偏压的增加而明显减小，如" }, { "name": "xref", "data": { "text": "图4(b)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(b)" } ] } }, { "name": "text", "data": "所示。只有被电子陷阱捕获在ITO电极附近的光生电子才能够辅助外电路空穴隧穿注入活性层产生光电流。短波入射光在活性层中的入射深度通常比长波入射光浅。如果吸光材料中含有只吸收短波入射光的材料(例如ZnO界面层)，短波入射光在活性层中的入射深度会更浅" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。因此，活性层吸收短波入射光产生的被电子陷阱捕获的光生电子离ITO电极较近，而活性层吸收长波入射光产生的被电子陷阱捕获的光生电子则更主要分布于整个活性层中，多数离ITO电极较远。虽然活性层吸收短波入射光产生的被电子陷阱捕获的光生电子离ITO电极较近，但是也有远近之分。随正向偏压的增加(25~45 V)，活性层吸收波长为350 nm左右的入射光产生的离ITO电极稍远的光生电子(被电子陷阱捕获)，在外加电场的作用下，会向ITO电极方向移动，并被离ITO电极相对较近的电子陷阱捕获以辅助外电路空穴隧穿注入活性层，提升器件在350 nm附近的EQE。而且，更大的偏压(25~45 V)更有利于ZnO界面层吸收紫外光产生的光生电子和空穴参与载流子输运，降低载流子复合几率，提高器件的EQE。然而，由于活性层吸收长波入射光产生的被电子陷阱捕获的光生电子分布范围较广，多数离ITO电极较远，偏压增大(25~45 V)产生的电场不足以使大多数离ITO电极较远的被捕获光生电子移动向ITO电极附近，以辅助外电路空穴隧穿注入。因此，45 V偏压下的器件在350 nm附近的EQE显著大于可见光区的EQE。" } ] }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "不同偏压下，器件在350 nm和690 nm处的EQE、响应度和探测灵敏度" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab. 1" } ], "title": [ { "name": "text", "data": "EQE, responsivity and detectivity of the device under different bias voltages with light illumination of 350 nm and 690 nm" } ] } ], "note": [], "table": [ { "head": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "λ" } ] }, { "name": "text", "data": "/nm" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "EQE at 25 V/%" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "EQE at 30 V/%" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "EQE at 35 V/%" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "EQE at 40 V/%" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "EQE at 45 V/%" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": " at 45 V/(A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ")" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "D" } ] }, { "name": "sup", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "*" } ] } ] }, { "name": "text", "data": " at 45 V/Jones" } ] } ] ], "body": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "350" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "6 780" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "28 800" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "58 200" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "189 000" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "420 000" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1 185" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "1.8×10" }, { "name": "sup", "data": [ { "name": "text", "data": "13" } ] } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "690" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "1 230" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "3 140" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "11 000" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "32 000" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "39 300" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "219" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "3.3×10" }, { "name": "sup", "data": [ { "name": "text", "data": "12" } ] } ] } ] ], "foot": [] } ] } }, { "name": "p", "data": [ { "name": "text", "data": "响应度(Responsivity," }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": ")与探测灵敏度(Detectivity," }, { "name": "italic", "data": [ { "name": "text", "data": "D" } ] }, { "name": "sup", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "*" } ] } ] }, { "name": "text", "data": ")是光电探测器的两个重要性能参数，计算公式分别如下:" }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(2)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777609&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777614&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777618&type=" } } } ], "id": "DF2" } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(3)" } ], "data": [ { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777623&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777628&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777633&type=" } } } ], "id": "DF3" } }, { "name": "text", "data": "45 V偏压下，器件暗电流大小为566 μA，响应度与探测灵敏度光谱如" }, { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "所示，形状与EQE光谱相似，同样呈现紫外波长选择性响应。如" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "所示，45 V偏压下，器件在350 nm处的最高响应度与探测灵敏度分别为1 185 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "和1.8×10" }, { "name": "sup", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": " Jones分别是690 nm处响应度(219 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ")和探测灵敏度(3.3×10" }, { "name": "sup", "data": [ { "name": "text", "data": "12" } ] }, { "name": "text", "data": " Jones)的5.4倍和5.5倍。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "器件响应度与探测灵敏度光谱" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 5" } ], "title": [ { "name": "text", "data": "Responsivity and detectivity spectra of the device" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777638&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777645&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777641&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "3.4" } ], "title": [ { "name": "text", "data": "器件工作机理" } ], "level": "2", "id": "s3d" } }, { "name": "p", "data": [ { "name": "text", "data": "正向偏压和光照下，紫外波长选择性无机-有机复合结构光电探测器的载流子传输示意图如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "所示。器件活性层能够吸收光子产生光生电子和空穴，只有被电子陷阱捕获在ITO电极附近的光生电子才能辅助外电路空穴经ZnO与P3HT间的界面隧穿注入传输形成光电流。外加正向偏压产生的电场(" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "text", "data": ")方向与被电子陷阱捕获在ITO电极附近的光生电子产生的库伦电场方向一致，有助于外电路空穴从ITO电极经ZnO与P3HT间的界面隧穿注入活性层形成光电流。因此，入射光照射下，器件 EQE随偏压的增加(电场变大)而变大，呈现光电流倍增现象。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "正向偏压和光照下的器件载流子传输示意图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig. 6" } ], "title": [ { "name": "text", "data": "Schematic transport diagrams of charge carriers in the devices under forward bias voltages with light illumination" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777649&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777662&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=23777654&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "当外加偏压≤20 V时，偏压产生的电场促进ZnO界面层中光生电子和空穴的分离，降低载流子复合几率的能力有限。而且，该电场不足以使被电子陷阱捕获在离ITO电极稍远的光生电子移动向ITO电极附近，以辅助外电路空穴隧穿注入。因此，器件在350 nm左右的EQE与可见光区的EQE无明显差异。当外加偏压较大时(25~45 V)，偏压产生的电场越大，促进ZnO界面层中光生电子和空穴分离、降低载流子复合几率的能力越强，越能够提高器件的EQE。由于350 nm左右的入射光在活性层中的入射深度较浅，在活性层中产生的被电子陷阱捕获的光生电子离ITO电极较近。相反，长波入射光在活性层中入射深度较深，在活性层中产生的被电子陷阱捕获的光生电子分布范围较广，离ITO电极较远。正向偏压(电场)越大，离ITO电极较近的被电子陷阱捕获的光生电子移动向ITO电极并被电子陷阱捕获在ITO电极附近，以辅助外电路空穴隧穿注入活性层的几率越大。相反，虽然正向偏压(电场)在增大，但是不足以驱动多数被电子陷阱捕获在离ITO电极较远的光生电子移动向ITO电极附近。因此，较大偏压下(25~45 V)，器件在紫外光区的EQE明显大于可见和近红外光区的EQE，呈现明显的紫外波长选择性响应。上述结果表明，可以利用无机-有机复合结构光电探测器外加正向偏压可调范围较宽的特性，通过调节外加电场来调控ZnO界面层吸收紫外光产生光生电子和空穴参与载流子输运的程度，以及活性层中被电子陷阱捕获的光生电子的分布，从而调控器件的紫外波长选择性响应。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "label": [ { "name": "text", "data": "4" } ], "title": [ { "name": "text", "data": "结论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文通过溶液旋涂制备了以P3HT∶ITIC (100∶1," }, { "name": "italic", "data": [ { "name": "text", "data": "w" } ] }, { "name": "text", "data": "/" }, { "name": "italic", "data": [ { "name": "text", "data": "w" } ] }, { "name": "text", "data": ")为活性层、结构为ITO/ZnO/活性层/Ag的紫外波长选择性无机-有机复合结构光电探测器。正向偏压下，ZnO界面层既能吸收紫外光产生光生电子和空穴参与载流子输运(增大器件的光电流)，又能阻挡外电路空穴经ZnO与P3HT间的界面隧穿注入传输，体现双重功能。偏压较小时(≤20 V)，电场对ZnO吸收紫外光产生的光生电子和空穴的影响有限，而且不足以调节活性层中被电子陷阱捕获的光生电子的分布。因此，器件EQE光谱不出现紫外波长选择性响应。当偏压为25~45 V时，电场对ZnO吸收紫外光产生的光生电子和空穴的影响明显增强，并且能够驱动被电子陷阱捕获在离ITO电极较近的光生电子向ITO电极移动。因此，器件EQE光谱出现紫外波长选择性响应。特别是45 V偏压下，器件在350 nm处的EQE(420000%)、响应度(1 185 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ")和探测灵敏度(1.8×10" }, { "name": "sup", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": " Jones)分别是690 nm处EQE、响应度和探测灵敏度的10.7倍、5.4倍和5.5倍。并且，器件在350 nm处的EQE光谱响应峰的半高宽随正向偏压的增大而明显减小，最小仅为49 nm。上述结论为通过电场调控实现无机-有机复合结构光电探测器紫外可调窄带响应提供了有效策略。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文专家审稿意见及作者回复内容的下载地址:http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20210317." } ] } ] } ], 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