Au电极厚度对MgZnO紫外探测器性能的影响

Au电极厚度对MgZnO紫外探测器性能的影响 Effect of Au Electrode Thickness on The Performance of MgZnO UV Detector 孙华山 SUN Hua-shan 1 2 first-author 刘可为 LIU Ke-wei 1 陈洪宇 CHEN Hong-yu 1 2 范明明 FAN Ming-ming 1 2 陈星 CHEN Xing 1 李炳辉 LI Bing-hui 1 申德振 SHEN De-zhen 1 发光学及应用国家重点实验室 中国科学院长春光学精密机械与物理研究所,吉林 长春,130033 发光学及应用国家重点实验室 中国科学院长春光学精密机械与物理研究所,吉林 长春,130033 State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences 中国科学院大学 北京,100049 中国科学院大学 北京,100049 University of Chinese Academy of Sciences University of Chinese Academy of Sciences 利用分子束外延设备(MBE)制备了MgZnO薄膜.X射线衍射谱、紫外-可见透射光谱和X射线能谱表明薄膜具有单一六角相结构,吸收边为340 nm,Zn/Mg组分比为62:38.采用掩膜方法使用离子溅射设备,在MgZnO薄膜上制备了Au电极,并实现了Au-MgZnO-Au结构的紫外探测器.通过改变溅射时间,得到具有不同Au电极厚度的MgZnO紫外探测器.研究结果表明:随着Au电极厚度的增加,导电性先缓慢增加,再迅速增加,最后缓慢增加并趋于饱和;而Au电极的透光率则随厚度的增加呈线性下降.此外,随着Au电极厚度的增加,器件光响应度先逐渐增大,在Au电极厚度为28 nm时达到峰值,之后逐渐减小. MgZnO films were prepared by RF MBE equipment. X-ray diffraction, UV-visible transmission spectroscopy and X-ray energy dispersive spectroscopy indicated that MgZnO films had a single hexagonal phase structure with a shap absorption edge at ~340 nm, and the composition ratio of Zn and Mg was 62:38. Au electrodes were deposited on MgZnO thin films by an ion sputtering apparatus with a mask and Au-MgZnO-Au UV detectors were fabricated. Au electrodes thicknesses could be modified by changing the sputtering time. With the increasing of Au electrode thickness, the conductivity of Au films increased slowly at first, then increased rapidly, and slowly to saturation finally. As for the transmittance of Au films, it decreased nearly linearly with the increasing of Au electrode thickness. In addition, with the increasing of Au electrodes thickness, the responsivity of MgZnO UV photodetectors gradually increased at first, and then decreased. When the thickness of Au electrode was 28 nm, the device has the best responsivity. MgZnO 紫外探测器 Au电极 厚度 MgZnO UV detectors Au electrode thickness Liu K W, Sakurai M, Aono M. ZnO-based ultraviolet photodetectors [J]. Sensors, 2010, 10:8604-8634. Zheng J, Zhang Z Z, Wang L K, et al. Controlled growth of pure cubic Mg0.3Zn0.7O thin films on c-plane sapphire by introducing graded buffer layer [J]. Chin. J. Lumin.(发光学报), 2014, 35(9):1040-1045 (in Chinese). Yang W, Vispute R, Choopun S, et al. Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films [J]. Appl. Phys. Lett., 2001, 78(18):2787-2789. Xie X H. The Fabrication and Internal Gain Properties of MgZnO-based Heterostructures Ultraviolet Detectors . Changchun: Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 2014 (in Chinese). Zhao C Y. The Growth of ZnO Films by MOCVD and The Study of Photodetectors Fabricated on ZnO Films . Changchun: Changchun University of Science and Technology, 2009 (in Chinese). Takeuchi I, Yang W, Chang K S, et al. Monolithic multichannel ultraviolet detector arrays and continuous phase evolution in MgxZn1-xO composition spreads [J]. J. Appl. Phys., 2003, 94:7336-7340. Yang W, Hullavarad S, Nagaraj B, et al. Compositionally-tuned epitaxial cubic MgxZn1-xO on Si(100)for deep ultraviolet photodetectors [J]. Appl. Phys. Lett., 2003, 82:3424-3426. Liu K W, Shen D Z, Zhang J Y, et al. Zn0.76Mg0.24O homojunction photodiode for ultraviolet detection [J]. Appl. Phys. Lett., 2007, 91(20):201106-1-3. Zhu H, Shan C X, Wang L K, et al. Metal-oxide-semiconductor-structured MgZnO ultraviolet photodetector with highinternal gain [J]. J. Phys. Chem. C, 2010, 114:7169-7172. Ju Z G, Shan C X, Jiang D Y, et al. MgxZn1-xO-based photodetectors covering the whole solar-blind spectrum range [J]. Appl. Phys. Lett., 2008, 93(17):173505-1-3. Wang L K, Ju Z G, Zhang J Y, et al. Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices [J]. Appl. Phys. Lett., 2009, 95(13):131113-1-3. Naohara H, Ye S, Uosaki K. Thickness dependent electrochemical reactivity of epitaxially electrodeposited palladium thin layers on Au(111) and Au(100) surfaces [J]. J. Electroanal. Chem., 2001, 500:435-445. Kim Y S, Park J H, Kim D. Influence of Au under layer thickness on the electro-optical properties of ITO/Au layered films deposited by magnetron sputtering on unheated polycarbonate substrates [J]. Vacuum, 2008, 82(6):574-578. Kim D. The influence of Au thickness on the structural, optical and electrical properties of ZnO/Au/ZnO multilayer films [J]. Opt. Commun., 2012, 285(6):1212-1214. 10.3788/fgxb20153602.0200 O472.8;O484.4 国家自然科学基金(61475153,10974197,11134009);国家"973计划"(2011CB302006);中科院"BR计划;资助项目 2014-09-02 2014-09-28 2014-12-19 2015-02-03 2020-08-11 2 36