室温下石墨烯的霍尔效应实验研究

室温下石墨烯的霍尔效应实验研究 Experimental Research on Hall Effect of Graphene at Room-temperature 安楠 AN Nan first-author 白浪 BAI Lang 李小俊 LI Xiao-jun 李渭龙 LI Wei-long 任兆玉 REN Zhao-yu 西北大学 光子学与光子技术研究所, 陕西省光电技术与功能材料省部共建国家重点实验室培育基地,陕西 西安,710069 西北大学 光子学与光子技术研究所, 陕西省光电技术与功能材料省部共建国家重点实验室培育基地,陕西 西安,710069 Institute of Photonics and Photon-Technology, Northwest University, Shannxi Important Laboratory for Photoelectric and Functional Materials, Provincical Cultivation Base of State Improtant Laboratory, Xi'an 710069, China Institute of Photonics and Photon-Technology, Northwest University, Shannxi Important Laboratory for Photoelectric and Functional Materials, Provincical Cultivation Base of State Improtant Laboratory, Xi'an 710069, China 对用化学气相沉积法(CVD)研制的长、宽均为1.23cm,厚度为3个原子层尺寸的石墨烯样品,进行了室温下的霍尔效应相关研究。实验中电极与石墨烯之间有良好的欧姆接触。通过范德堡法测量了样品在磁场强度为0.353T,不同电流强度下的霍尔电压,并对结果进行处理分析,得到石墨烯的霍尔系数 R H =7.00×10 -7 m 3 /C、载流子浓度 n =10.52×10 24 /m 3 、霍尔元件乘积灵敏度 K H =6.87×10 2 m 2 /C。 The grapheme samples were deposited on glass substrates by chemical vapor deposition(CVD). Both the length and width of graphene samples were 1.23 cm, and the thickness was 3 atomic layer thickness setting scales. The Hall effects at room temperature of the samples were studied. There was good ohmic contact between the sample and the electrode. By using van der Pauw method, the Hall voltage of the samples were measured under the magnetic field strength 0.353 T and different electric currents. The calculating results show that the graphene Hall coefficient R H is 7.00×10 -7 m 3 /C, the carrier concentration n is 10.52×10 24 /m 3 and the Hall element production sensitivity K H is 6.87×10 2 m 2 /C. 石墨烯 测量 霍尔效应 graphene measurement Hall effect Katsnelson M I. Graphene carbon in two dimensions [J]. Mater. Today, 2007, 10(1):20-27. Semennoff G W. Condensed-matter simulation of a three-dimensional anomaly [J]. Phys. Rev. Lett., 1984, 53(26):2449-2452. Chen J H, Jang C, Xiao S, et al. Intrinsic and extrinsic performance limits of graphene devices on SiO2 [J]. Nat. Nanotechnol., 2008, 3(4):206-208. Mu Z Q, Zhu Z, Yang J Y, et al. Development present situation of grapheme [J]. J. Sichuan Univ.(四川大学学报), 2012, 49(2):423-428 (in Chinese). Novoselov K S, Jiang Z, Zhang Y, et al. Room-temperature quantum hall effect in grapheme [J]. Science, 2007, 315(5817):1379-1381. Geim A K, Novoselov K S. The rise of grapheme [J]. Nat. Mater., 2007, 6(3):183-185. Novoselov K S, Geim A K, Morozov S V, et al. Two-dimensional gas of massless dirac fermions in grapheme [J]. Nature, 2005, 438(7065):197-200. Zhang Y B, Tan Y W, Stormer H L, et al. Experimental observation of the quantum Hall effect and Berrys phase in graphene [J]. Nature, 2005, 438(7065):201-204. Wu S C, Wang Z Q. Modern Physics Experiment [M]. Beijing: Peking University Press, 1986:534-536, 547-559 (in Chinese). Huang K, Han R Q. Semiconductor Physics [M]. Beijing: Science Press, 1979:71-75 (in Chinese). Liu E K, Zhu B S, Luo J S. Semiconductor Physics [M]. Xi'an: Xian Jiaotong University Press, 2008:57-60 (in Chinese). Schedin F, Geim A K, Morozov S V, et al. Detection of individual gas molecules adsorbed on graphene [J]. Nat. Mater., 2007, 6:652-655. Kim K, Zhao Y, Jang H, et al. Large-scale pattern growth of graphene films for stretchable transparent eletrodes [J]. Nature, 2009, 457(7230):706-710. Xiao J, Mei D, Li X, et al. Hierarchically porous graphene as a lithium air battery electrode [J]. Nano Lett., 2011, 11(11):5071-5078. 10.3788/fgxb20133401.0045 O471.1 国家自然科学基金(10974152,611770959,61275105);陕西省教育厅科研计划(08JZ68,2010JS111,12JK0519)资助项目 2012-10-12 2012-11-03 2013-01-10 2020-08-11 1 34