高性能宽带倍增型四元有机光电探测器 增强出版

{ "defaultlang": "zh", "titlegroup": { "articletitle": [ { "lang": "zh", "data": [ { "name": "text", "data": "高性能宽带倍增型四元有机光电探测器" } ] }, { "lang": "en", "data": [ { "name": "text", "data": "High Performance Broadband Photomultiplication-type Quaternary Organic Photodetectors" } ] } ] }, "contribgroup": { "author": [ { "name": [ { "lang": "zh", "surname": "王", "givenname": "建彬", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "WANG", "givenname": "Jian-bin", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [ "corresp", "first-author" ], "corresp": [ { "rid": "cor2", "lang": "en", "text": "* Corresponding Author, E-mail: wangjianbinnewlife@foxmail.com", "data": [ { "name": "text", "data": "* Corresponding Author, E-mail: wangjianbinnewlife@foxmail.com" } ] } ], "bio": [ { "lang": "zh", "text": [ "王建彬(1983-)，男，福建福州人，博士，讲师，2019年于中国科学院福建物质结构研究所获得博士学位，主要从事有机光电材料与器件的研究。E-mail: wangjianbinnewlife@foxmail.com" ], "graphic": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352474&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352476&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352478&type=" } ], "data": [ [ { "name": "text", "data": "王建彬" }, { "name": "text", "data": "(1983-)，男，福建福州人，博士，讲师，2019年于中国科学院福建物质结构研究所获得博士学位，主要从事有机光电材料与器件的研究。E-mail: " }, { "name": "text", "data": "wangjianbinnewlife@foxmail.com" } ] ] } ], "email": "wangjianbinnewlife@foxmail.com", "deceased": false }, { "name": [ { "lang": "zh", "surname": "唐", "givenname": "孝生", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "TANG", "givenname": "Xiao-sheng", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff2", "text": "2" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "周", "givenname": "笔", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHOU", "givenname": "Bi", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "曾", "givenname": "夏辉", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZENG", "givenname": "Xia-hui", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "余", "givenname": "华梁", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "YU", "givenname": "Hua-liang", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false }, { "name": [ { "lang": "zh", "surname": "周", "givenname": "赢武", "namestyle": "eastern", "prefix": "" }, { "lang": "en", "surname": "ZHOU", "givenname": "Ying-wu", "namestyle": "eastern", "prefix": "" } ], "stringName": [], "aff": [ { "rid": "aff1", "text": "1" } ], "role": [], "deceased": false } ], "aff": [ { "id": "aff1", "intro": [ { "lang": "zh", "label": "1", "text": "闽江学院　物理与电子信息工程学院，福建 　 福州 　 350108", "data": [ { "name": "text", "data": "闽江学院　物理与电子信息工程学院，福建 　 福州 　 350108" } ] }, { "lang": "en", "label": "1", "text": "College of Physics & Electronics Information Engineering, Minjiang University, Fuzhou 350108, China", "data": [ { "name": "text", "data": "College of Physics & Electronics Information Engineering, Minjiang University, Fuzhou 350108, China" } ] } ] }, { "id": "aff2", "intro": [ { "lang": "zh", "label": "2", "text": "重庆邮电大学　光电工程学院，重庆 　 400065", "data": [ { "name": "text", "data": "重庆邮电大学　光电工程学院，重庆 　 400065" } ] }, { "lang": "en", "label": "2", "text": "College of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China", "data": [ { "name": "text", "data": "College of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China" } ] } ] } ] }, "abstracts": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "text", "data": "采用溶液法制备了结构为ITO/PEDOT∶PSS/活性层/Al的四元倍增型有机光电探测器，器件本体异质结活性层由P3HT∶PTB7-Th∶IEICO∶PC" }, { "name": "sub", "data": [ { "name": "text", "data": "71" } ] }, { "name": "text", "data": "BM以90∶10∶0.5∶0.5的质量比共混组成。随着偏压增加，器件外量子效率(External quantum efficiency,EQE)远超100%，并展现300~850 nm的宽光谱响应。在330 nm与780 nm处，器件可获得的最高EQEs和响应度分别为773000%和2 057 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": " 以及311000%和1 956 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，为有机光电探测器在紫外和近红外光区可获得的最高EQE和响应度之一。-25 V偏压下， 与结构为ITO/PEDOT∶PSS/P3HT∶PTB7-Th∶IEICO(90∶10∶1)/Al的三元器件相比，四元器件的平均EQE(388167%)、响应度(1 604 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ")以及探测灵敏度(3.6×10" }, { "name": "sup", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": " Jones)分别提高了0.5倍、0.5倍和0.4倍，有效提升了器件对弱光的探测能力。上述结果提供了一种制备多元宽带倍增型有机光电探测器的有效策略，用以提高器件弱光探测能力，特别是提升了器件对紫外和近红外光的响应与探测能力。" } ] } ] }, { "lang": "en", "data": [ { "name": "p", "data": [ { "name": "text", "data": "Quaternary photomultiplication(PM)-type organic photodetectors(OPDs) with a structure of ITO/PEDOT∶PSS/active layer/Al were fabricated by a solution-processing method. The bulk-heterojunction active layer of devices was composed of P3HT∶PTB7-Th∶IEICO∶PC" }, { "name": "sub", "data": [ { "name": "text", "data": "71" } ] }, { "name": "text", "data": "BM with a weight ratio of 90∶10∶0.5∶0.5. As the bias voltage increases, the external quantum efficiencies(EQEs) of the devices are much larger than 100% and exhibit a wide spectral response range of 300-850 nm. At 330 nm and 780 nm, the highest EQE and responsivity of the devices are 773000% and 2 057 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ", and 311000% and 1 956 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ", respectively, which are one of the highest EQEs and responsivity values in ultraviolet and near-infrared areas for the OPDs. Under -25 V bias, compared to the ternary devices with a structure of ITO/PEDOT∶PSS/P3HT∶PTB7-Th∶IEICO(90∶10∶1)/Al, the average EQE(388167%), responsivity(1 604 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ") and detectivity(3.6×10" }, { "name": "sup", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": " Jones) of quaternary devices are more than 0.5, 0.5, 0.4 times larger, respectively, effectively improving the detecting capacity of devices on weak light. The above results provide an effective strategy for preparing multi-element broadband PM-type OPDs to improve the detecting ability of the devices on weak light, especially improving the response and detecting ability of the devices in ultraviolet and near-infrared regions." } ] } ] } ], "keyword": [ { "lang": "zh", "data": [ [ { "name": "text", "data": "溶液法" } ], [ { "name": "text", "data": "四元" } ], [ { "name": "text", "data": "倍增型有机光电探测器" } ], [ { "name": "text", "data": "紫外" } ], [ { "name": "text", "data": "近红外" } ] ] }, { "lang": "en", "data": [ [ { "name": "text", "data": "solution processing method" } ], [ { "name": "text", "data": "quaternary" } ], [ { "name": "text", "data": "photomultiplication-type organic photodetectors" } ], [ { "name": "text", "data": "ultraviolet" } ], [ { "name": "text", "data": "near infrared" } ] ] } ], "highlights": [], "body": [ { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "1　引言" } ], "level": "1", "id": "s1" } }, { "name": "p", "data": [ { "name": "text", "data": "由于易制备、材料可选范围广以及可大面积制备等优点，有机光电探测器受到了广泛关注" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "1", "type": "bibr", "rid": "R1", "data": [ { "name": "text", "data": "1" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。人们对颜色选择性、紫外、近红外以及全色有机光电探测器的发展越发感兴趣" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "2", "type": "bibr", "rid": "R2", "data": [ { "name": "text", "data": "2" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "7", "type": "bibr", "rid": "R7", "data": [ { "name": "text", "data": "7" } ] } } ], "rid": [ "R2", "R3", "R4", "R5", "R6", "R7" ], "text": "2-7", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。大多数有机光电探测器是二极管型，器件光电流来自电极收集到的光生载流子" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "8", "type": "bibr", "rid": "R8", "data": [ { "name": "text", "data": "8" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "9", "type": "bibr", "rid": "R9", "data": [ { "name": "text", "data": "9" } ] } } ], "rid": [ "R8", "R9" ], "text": "8-9", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。二极管型有机光电探测器噪声低、响应快，有利于在光通信、远程控制和图像传感领域的应用" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "10", "type": "bibr", "rid": "R10", "data": [ { "name": "text", "data": "10" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "12", "type": "bibr", "rid": "R12", "data": [ { "name": "text", "data": "12" } ] } } ], "rid": [ "R10", "R11", "R12" ], "text": "10-12", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。但是，弱光环境中，外量子效率(EQE)较小的光电探测器的弱光电流信号要通过前置放大器进行放大" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "13", "type": "bibr", "rid": "R13", "data": [ { "name": "text", "data": "13" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。而且，这可能会带来新的噪声，并使测量系统的成本更昂贵。相对低的EQEs(通常小于100%)可能会限制二极管型有机光电探测器的潜在应用。因此，在弱光条件下获得超高EQEs(≫100%)是有机光电探测器面临的最重要挑战之一" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "14", "type": "bibr", "rid": "R14", "data": [ { "name": "text", "data": "14" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "15", "type": "bibr", "rid": "R15", "data": [ { "name": "text", "data": "15" } ] } } ], "rid": [ "R14", "R15" ], "text": "14-15", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "，特别是在紫外和近红外光区。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "近年来，Zhang课题组报道了一系列以P3HT为电子给体、富勒烯衍生物PC" }, { "name": "sub", "data": [ { "name": "text", "data": "71" } ] }, { "name": "text", "data": "BM或非富勒烯小分子半导体为电子受体的二元倍增型有机光电探测器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "16", "type": "bibr", "rid": "R16", "data": [ { "name": "text", "data": "16" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } } ], "rid": [ "R16", "R17", "R18", "R19" ], "text": "16-19", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。器件EQEs远大于100%，能对弱入射光进行自放大。与以PC" }, { "name": "sub", "data": [ { "name": "text", "data": "71" } ] }, { "name": "text", "data": "BM为电子受体的器件相比，虽然以非富勒烯小分子半导体DC-IDT2T为电子受体能提升器件对近红外光的响应能力，但是器件在紫外到可见光区的EQEs显著降低" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。为了提升二元倍增型有机光电探测器的整体性能，溶液法制备的氧化锌被用作器件的界面层以提高器件对紫外到近红外光的响应与探测能力，并具有普适性" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "blockXref", "data": { "data": [ { "name": "xref", "data": { "text": "20", "type": "bibr", "rid": "R20", "data": [ { "name": "text", "data": "20" } ] } }, { "name": "text", "data": "-" }, { "name": "xref", "data": { "text": "21", "type": "bibr", "rid": "R21", "data": [ { "name": "text", "data": "21" } ] } } ], "rid": [ "R20", "R21" ], "text": "20-21", "type": "bibr" } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。为了进一步提高器件对近红外光的响应能力，Zhang课题组将窄带隙材料PTB7-Th作为第二种电子给体掺入二元倍增型有机光电探测器的活性层(P3HT∶PC" }, { "name": "sub", "data": [ { "name": "text", "data": "71" } ] }, { "name": "text", "data": "BM)来制备三元器件" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "22", "type": "bibr", "rid": "R22", "data": [ { "name": "text", "data": "22" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。虽然与相同条件下的二元器件相比，三元倍增型有机光电探测器对近红外光的响应能力显著提升，但是器件对短波长范围内光的响应能力明显降低，而且器件EQE在510 nm左右的凹陷仍比较明显。为了获得紫外到近红外光谱响应较均匀的器件，非富勒烯小分子半导体IEICO被用作电子受体来制备三元倍增型有机光电探测器" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。与相同条件下的二元器件相比，三元器件在光谱响应范围内的EQEs得到整体提升，显著提高了器件对弱光的响应能力，并在380 nm处获得最高为512000%的EQE。因此，设计与制备具有超高EQEs的多元倍增型有机光电探测器对弱光探测具有重要意义。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文通过溶液法制备了结构为ITO/PEDOT∶PSS/P3HT∶PTB7-Th∶IEICO∶PC" }, { "name": "sub", "data": [ { "name": "text", "data": "71" } ] }, { "name": "text", "data": "BM(90∶10∶0.5∶0.5)/Al的四元本体异质结倍增型有机光电探测器。器件的光谱响应范围为300~850 nm，获得了远超100%的EQEs。在330 nm(0.04 mW·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": ")和780 nm(0.09 mW·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": ")处，-25 V偏压下器件可获得的最高EQE分别为773000%和311000%，最高响应度分别为2 057 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "和1 956 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，是已报道的有机光电探测器在330 nm和780 nm处展现的最高EQE与响应度之一。此外，四元器件在光谱响应范围内的平均EQE(388167%)、响应度(1 604 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ")以及探测灵敏度(3.6×10" }, { "name": "sup", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": " Jones)分别是同结构三元器件ITO/PEDOT∶PSS/P3HT∶PTB7-Th∶IEICO(90∶10∶1)/Al平均EQE、响应度以及探测灵敏度的1.5倍、1.5倍和1.4倍。上述结果表明，四元倍增型有机光电探测器提供了一种通过制备多元本体异质结活性层来提高倍增型有机光电探测器性能的有效策略，特别是器件在紫外和近红外光区的性能，为制备更多元高性能倍增型有机光电探测器奠定了基础。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2　实验" } ], "level": "1", "id": "s2" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.1　器件制备" } ], "level": "2", "id": "s2a" } }, { "name": "p", "data": [ { "name": "text", "data": "刻蚀有ITO电极的玻璃(面积为 20 mm×20 mm，电阻≤15 Ω·□" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ")分别用去离子水、丙酮以及异丙醇依次清洗20 min后，在烘箱中过夜烘干(70 ℃)。将PEDOT∶PSS以5 000 r/min(40 s)旋涂到预先经过10 min紫外臭氧处理的ITO玻璃上，经110 ℃加热10 min后转移到氮气氛围的手套箱中。接着，以1,2-二氯苯为溶剂，将预先经过充分搅拌的P3HT∶PTB7-Th∶IEICO∶PC" }, { "name": "sub", "data": [ { "name": "text", "data": "71" } ] }, { "name": "text", "data": "BM (90∶10∶0.5∶0.5)和P3HT∶PTB7-Th∶IEICO(90∶10∶1)溶液(40 mg/mL)以600 r/min(25 s)分别旋涂到PEDOT∶PSS界面层上，经80 ℃加热20 s后形成厚度约为250 nm的活性层。最后，在真空度小于1×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-4" } ] }, { "name": "text", "data": " Pa的镀膜机腔体中蒸镀厚度约为100 nm的金属Al电极。每个器件面积大小为~4 mm" }, { "name": "sup", "data": [ { "name": "text", "data": "2" } ] }, { "name": "text", "data": "。P3HT(" }, { "name": "italic", "data": [ { "name": "text", "data": "M" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "w" } ] }, { "name": "text", "data": ",166.29 g/mol)和 PC" }, { "name": "sub", "data": [ { "name": "text", "data": "71" } ] }, { "name": "text", "data": "BM(Purity,99.5% by NMR)购买自百灵威科技有限公司，PTB7-Th(" }, { "name": "italic", "data": [ { "name": "text", "data": "M" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "w" } ] }, { "name": "text", "data": ",50 000 g/mol)和IEICO(" }, { "name": "italic", "data": [ { "name": "text", "data": "M" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "w" } ] }, { "name": "text", "data": ",1 736.44 g/mol)购买自朔纶有机光电科技(北京)有限公司。" }, { "name": "xref", "data": { "text": "图1", "type": "fig", "rid": "F1", "data": [ { "name": "text", "data": "图1" } ] } }, { "name": "text", "data": "为材料分子结构以及器件结构示意图。" } ] }, { "name": "fig", "data": { "id": "F1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图1" } ], "title": [ { "name": "text", "data": "(a)分子结构;(b)器件结构示意图。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.1" } ], "title": [ { "name": "text", "data": "(a)Structures of molecules.(b)Schematic diagram of device structure." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352484&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352493&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352490&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "2.2　器件表征" } ], "level": "2", "id": "s2b" } }, { "name": "p", "data": [ { "name": "text", "data": "器件电流密度-电压(" }, { "name": "italic", "data": [ { "name": "text", "data": "J-V" } ] }, { "name": "text", "data": ")曲线通过Keithley 2636B 光电数据采集系统测量，其中入射光由太阳光模拟器通过中性衰减片调节获得。器件 EQE 光谱通过 Zolix 光电探测器测试系统和 Keithley 2636B 光电数据采集系统共同测量获得。室温下，材料吸收光谱通过Lambda365紫外-可见分光光度计进行测量。器件的活性层厚度采用Bruker Dektak XT 台阶仪测量。" } ] } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3　结果与讨论" } ], "level": "1", "id": "s3" } }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.1　材料能级和吸收光谱" } ], "level": "2", "id": "s3a" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图2(a)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(a)" } ] } }, { "name": "text", "data": "为材料能级示意图。活性层中，大量的电子给体(P3HT或PTB7-Th)包围少量的电子受体(IEICO或PC" }, { "name": "sub", "data": [ { "name": "text", "data": "71" } ] }, { "name": "text", "data": "BM)，电子传输通道不连续。由于P3HT的最低未占据分子轨道(LUMO)能级与IEICO和PC" }, { "name": "sub", "data": [ { "name": "text", "data": "71" } ] }, { "name": "text", "data": "BM的LUMO能级间的差异分别为~1.05 eV和~1.4 eV, PTB7-Th 的LUMO能级与IEICO和PC" }, { "name": "sub", "data": [ { "name": "text", "data": "71" } ] }, { "name": "text", "data": "BM的LUMO能级间的差异分别为~0.31 eV和~0.66 eV，可将被P3HT或PTB7-Th包围的IEICO或PC" }, { "name": "sub", "data": [ { "name": "text", "data": "71" } ] }, { "name": "text", "data": "BM分子看作电子陷阱。" }, { "name": "xref", "data": { "text": "图2(b)", "type": "fig", "rid": "F2", "data": [ { "name": "text", "data": "图2(b)" } ] } }, { "name": "text", "data": "为材料(薄膜)的归一化吸收光谱。组成四元器件本体异质结活性层的四种材料(P3HT、PTB7-Th、IEICO和PC" }, { "name": "sub", "data": [ { "name": "text", "data": "71" } ] }, { "name": "text", "data": "BM)吸收光谱能够形成较好的互补。" } ] }, { "name": "fig", "data": { "id": "F2", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图2" } ], "title": [ { "name": "text", "data": "(a)材料能级示意图;(b)材料(薄膜)的归一化吸收光谱。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.2" } ], "title": [ { "name": "text", "data": "(a)Schematic diagram of material energy levels. (b)Normalized absorption spectra of materials(thin films)." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352498&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352506&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352503&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.2　器件" }, { "name": "italic", "data": [ { "name": "text", "data": "J-V" } ] }, { "name": "text", "data": "曲线" } ], "level": "2", "id": "s3b" } }, { "name": "p", "data": [ { "name": "text", "data": "不同入射光强下，四元器件和三元器件的" }, { "name": "italic", "data": [ { "name": "text", "data": "J-V" } ] }, { "name": "text", "data": "曲线分别如" }, { "name": "xref", "data": { "text": "图3(a)、(b)", "type": "fig", "rid": "F3", "data": [ { "name": "text", "data": "图3(a)、(b)" } ] } }, { "name": "text", "data": "所示。反向偏压下，四元器件和三元器件的暗电流密度(" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "D" } ] }, { "name": "text", "data": ")接近相等并且都较小，是由于:(1)活性层中的电子传输通道不连续，电子运动形成的电流很小;(2)电子给体P3HT和PTB7-Th 的最高占据分子轨道(HOMO)能级与Al电极功函数间的差异分别约为0.9 eV和1.02 eV，能阻碍外电路空穴注入活性层传输形成电流。PEDOT∶PSS界面层是空穴传输层，有利于空穴传输。正向偏压下，空穴从ITO电极经PEDOT∶PSS界面层注入到电子给体(P3HT或PTB7-Th)的HOMO能级上传输，并被Al电极收集形成暗电流。因此，器件在正向偏压下的暗电流密度比较大，对入射光无响应，器件暗电流密度和光电流密度近似相等。反向偏压下，器件光电流密度(" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": ")随偏压的增大或入射光的增强而显著增大，归因于从Al电极注入到电子给体HOMO能级上的空穴数量显著增加，并被ITO电极收集形成光电流。入射光越强，被电子陷阱捕获在Al电极附近的光生电子越多。而分布在Al电极附近的光生电子产生的库伦电场能辅助外电路空穴隧穿注入活性层，形成光电流。此外，反向偏压下的外加电场(" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "text", "data": ")方向与光生电子产生的库伦电场方向一致，也能促进外电路空穴从Al电极隧穿注入活性层，偏压越大" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "text", "data": "越强。" } ] }, { "name": "fig", "data": { "id": "F3", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图3" } ], "title": [ { "name": "text", "data": "电流密度-电压曲线。(a)四元器件;(b)三元器件。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.3" } ], "title": [ { "name": "italic", "data": [ { "name": "text", "data": "J-V" } ] }, { "name": "text", "data": " characteristics. (a)Quaternary device. (b)Ternary device." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352510&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352516&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352513&type=" } ] } }, { "name": "p", "data": [ { "name": "text", "data": "-15 V偏压下，器件的" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "比" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "D" } ] }, { "name": "text", "data": "大2~3个数量级，并且四元器件在1.5 mW·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": "入射光强下的" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "(1.9×10" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": " A·cm" }, { "name": "sup", "data": [ { "name": "text", "data": "-2" } ] }, { "name": "text", "data": ")是相同条件下三元器件的2倍，是由于:(1)PC" }, { "name": "sub", "data": [ { "name": "text", "data": "71" } ] }, { "name": "text", "data": "BM的吸收光谱与P3HT、PTB7-Th以及IEICO的吸收光谱能形成较好的互补，对紫外光有较强的吸收;(2)PC" }, { "name": "sub", "data": [ { "name": "text", "data": "71" } ] }, { "name": "text", "data": "BM的LUMO能级与P3HT或PTB7-Th的LUMO能级间的差异比IEICO的LUMO能级与P3HT或PTB7-Th的LUMO能级间的差异大，更有利于电子给体或受体吸收光子产生的激子在给体和受体界面处解离成自由电子和空穴，产生更多被捕获在Al电极附近的光生电子" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "19", "type": "bibr", "rid": "R19", "data": [ { "name": "text", "data": "19" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": "。" } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.3　器件光谱响应特性" } ], "level": "2", "id": "s3c" } }, { "name": "p", "data": [ { "name": "text", "data": "为了进一步研究少量PC" }, { "name": "sub", "data": [ { "name": "text", "data": "71" } ] }, { "name": "text", "data": "BM对四元器件光电性能的影响，分别测量了四元器件与三元器件的EQE光谱，如" }, { "name": "xref", "data": { "text": "图4(a)、(b)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(a)、(b)" } ] } }, { "name": "text", "data": "所示。器件均展现300~850 nm的宽光谱响应，EQE(" }, { "name": "italic", "data": [ { "name": "text", "data": "η" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "EQE" } ] }, { "name": "text", "data": ")计算公式如下:" } ] }, { "name": "fig", "data": { "id": "F4", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图4" } ], "title": [ { "name": "text", "data": "EQE光谱。(a)四元器件;(b)三元器件;(c)四元器件与三元器件对比。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.4" } ], "title": [ { "name": "text", "data": "EQE spectra. (a)Quaternary device.(b)Ternary device. (c)Comparison of quaternary and ternary devices." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352519&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352526&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352522&type=" } ] } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(1)" } ], "data": [ { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352530&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352534&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352538&type=" } } }, { "name": "text", "data": " " }, { "name": "text", "data": " " } ], "id": "DF1" } }, { "name": "p", "data": [ { "name": "text", "data": "其中，" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "ph" } ] }, { "name": "text", "data": "为" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "L" } ] }, { "name": "text", "data": "和" }, { "name": "italic", "data": [ { "name": "text", "data": "J" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "D" } ] }, { "name": "text", "data": "的差值，" }, { "name": "italic", "data": [ { "name": "text", "data": "hν" } ] }, { "name": "text", "data": "为单个光子的能量，" }, { "name": "italic", "data": [ { "name": "text", "data": "P" } ] }, { "name": "sub", "data": [ { "name": "text", "data": "in" } ] }, { "name": "text", "data": "为入射光强，" }, { "name": "italic", "data": [ { "name": "text", "data": "q" } ] }, { "name": "text", "data": "为单电子电量。随着偏压增加，器件EQE显著增大(≫100%)，是由于" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "23", "type": "bibr", "rid": "R23", "data": [ { "name": "text", "data": "23" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ":(1)空穴传输速率会随偏压增加而增大" }, { "name": "sup", "data": [ { "name": "text", "data": "[" }, { "name": "xref", "data": { "text": "24", "type": "bibr", "rid": "R24", "data": [ { "name": "text", "data": "24" } ] } }, { "name": "text", "data": "]" } ] }, { "name": "text", "data": ";(2)随偏压的增加，更多分布在ITO电极附近的光生电子会往Al电极方向移动，被Al电极附近的电子陷阱捕获的光生电子变多，以辅助更多的空穴隧穿注入活性层;(3)活性层中，电子给体的能带会随偏压的增加弯曲得更显著，有助于空穴隧穿注入活性层。反向偏压下，器件EQE光谱在500 nm左右的凹陷会随偏压的增加而迅速消失。器件EQE光谱中凹陷的位置与P3HT吸收光谱中的吸收峰位置相对应。光从ITO电极入射，500 nm左右的光主要先被ITO电极附近的P3HT吸收，产生较多被陷阱捕获在ITO电极附近的光生电子。只有少量500 nm左右的光能到达Al电极附近，产生少量的光生电子被电子陷阱捕获，辅助空穴隧穿注入。反向偏压下，外电路隧穿注入的空穴数量由Al电极附近的光生电子数量决定。随偏压的增加，被陷阱捕获在ITO电极附近的光生电子会往Al电极方向移动以辅助空穴隧穿注入，导致EQE光谱中的凹陷消失。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "-25 V偏压下，四元器件与三元器件的EQE光谱对比如" }, { "name": "xref", "data": { "text": "图4(c)", "type": "fig", "rid": "F4", "data": [ { "name": "text", "data": "图4(c)" } ] } }, { "name": "text", "data": "所示。与相同条件下的三元器件相比，四元器件的EQEs整体得到提升，在光谱响应范围内的EQE平均值(388167%)提高了0.5倍，在紫外和近红外光区的提升更显著。紫外光区的提升归因于PC" }, { "name": "sub", "data": [ { "name": "text", "data": "71" } ] }, { "name": "text", "data": "BM对紫外光有较强的吸收，并且电子给体(P3HT或PTB7-Th)与PC" }, { "name": "sub", "data": [ { "name": "text", "data": "71" } ] }, { "name": "text", "data": "BM构成的电子陷阱深度比电子给体和IEICO构成的电子陷阱深度深，有利于激子解离成自由电子和空穴，更多分布在Al电极附近的光生电子能辅助更多空穴隧穿注入。可见光主要被P3HT吸收，可见光区EQEs的提升归因于更深的电子陷阱深度有利于激子解离成自由电子和空穴。四元器件与三元器件的EQE光谱在500 nm左右的凹陷都消失，说明少量PC" }, { "name": "sub", "data": [ { "name": "text", "data": "71" } ] }, { "name": "text", "data": "BM对-25 V偏压下光生电子从ITO电极移动向Al电极没有明显影响。长波长范围EQEs的提升主要是由于PTB7-Th与PC" }, { "name": "sub", "data": [ { "name": "text", "data": "71" } ] }, { "name": "text", "data": "BM构成较深的电子陷阱，有利于激子的解离。波长大于800 nm后，四元器件的EQEs快速降低并趋向三元器件的EQEs，是由于该光谱范围内的光生电子主要来自IEICO分子吸收光子产生。" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "列出了四元器件和三元器件在不同偏压下和不同波长处的EQEs。-25 V偏压下，四元器件在330 nm和780 nm处分别可获得高达773000%和311000%的EQEs，是目前有机光电探测器在紫外和近红外光区可获得的最高EQE之一。超高EQEs有利于器件探测弱光，可对光电流信号进行自放大。" } ] }, { "name": "table", "data": { "id": "T1", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "表1" } ], "title": [ { "name": "text", "data": "四元器件和三元器件在不同偏压下与不同波长处的EQEs、响应度和探测灵敏度" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Tab.1" } ], "title": [ { "name": "text", "data": "EQEs, responsivity and detectivity of quaternary and ternary devices at different bias voltages and different wavelengths" } ] } ], "note": [ { "lang": "zh", "data": [ { "name": "p", "data": [ { "name": "sup", "data": [ { "name": "text", "data": "a" } ] }, { "name": "text", "data": "四元器件;" }, { "name": "sup", "data": [ { "name": "text", "data": "b" } ] }, { "name": "text", "data": "三元器件。" } ] } ] } ], "table": [ { "head": [ [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "λ" } ] }, { "name": "text", "data": "/nm" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "EQE at-5 V/%" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "EQE at-10 V/%" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "EQE at-15 V/%" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid #000;border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "EQE at-20 V/%" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-top:1px solid 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"16700" } ] }, { "colspan": "1", "rowspan": "1", "align": "right", "data": [ { "name": "text", "data": "105000" } ] }, { "colspan": "1", "rowspan": "1", "align": "right", "data": [ { "name": "text", "data": "299000" } ] }, { "colspan": "1", "rowspan": "1", "align": "right", "data": [ { "name": "text", "data": "1350" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "data": [ { "name": "text", "data": "3.2×10" }, { "name": "sup", "data": [ { "name": "text", "data": "13" } ] } ] } ], [ { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "780" }, { "name": "sup", "data": [ { "name": "text", "data": "b" } ] } ] }, { "colspan": "1", "rowspan": "1", "align": "right", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "39" } ] }, { "colspan": "1", "rowspan": "1", "align": "right", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "905" } ] }, { "colspan": "1", "rowspan": "1", "align": "right", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "8440" } ] }, { "colspan": "1", "rowspan": "1", "align": "right", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "69700" } ] }, { "colspan": "1", "rowspan": "1", "align": "right", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "193000" } ] }, { "colspan": "1", "rowspan": "1", "align": "right", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "1214" } ] }, { "colspan": "1", "rowspan": "1", "align": "center", "style": "border-bottom:1px solid #000;", "data": [ { "name": "text", "data": "2.9×10" }, { "name": "sup", "data": [ { "name": "text", "data": "13" } ] } ] } ] ], "foot": [] } ], "graphics": { "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352546&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352542&type=" } } }, { "name": "p", "data": [ { "name": "text", "data": "响应度(Responsivity," }, { "name": "italic", "data": [ { "name": "text", "data": "R" } ] }, { "name": "text", "data": ")和探测灵敏度(Detectivity," }, { "name": "italic", "data": [ { "name": "text", "data": "D" } ] }, { "name": "sup", "data": [ { "name": "italic", "data": [ { "name": "text", "data": "*" } ] } ] }, { "name": "text", "data": ")同样是评价器件光电性能的重要参数，可通过如下公式计算:" } ] }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(2)" } ], "data": [ { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352550&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352563&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352566&type=" } } }, { "name": "text", "data": " " }, { "name": "text", "data": " " } ], "id": "DF2" } }, { "name": "dispformula", "data": { "label": [ { "name": "text", "data": "(3)" } ], "data": [ { "name": "text", "data": " " }, { "name": "math", "data": { "graphicsData": { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352570&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352574&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352580&type=" } } }, { "name": "text", "data": " " }, { "name": "text", "data": " " } ], "id": "DF3" } }, { "name": "p", "data": [ { "name": "xref", "data": { "text": "图5", "type": "fig", "rid": "F5", "data": [ { "name": "text", "data": "图5" } ] } }, { "name": "text", "data": "为四元器件与三元器件在-25 V偏压下的响应度和探测灵敏度光谱，形状和EQE光谱相似。-25 V偏压下，四元器件在光谱响应范围(300~850 nm)内的响应度平均值(1 604 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ")和探测灵敏度平均值(3.6×10" }, { "name": "sup", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": " Jones)分别是相同条件下三元器件响应度平均值和探测灵敏度平均值的1.5倍和1.4倍，特别是器件在紫外和近红外光区的响应度和探测灵敏度提升更显著。-25 V偏压下，四元器件和三元器件在不同波长处的响应度与探测灵敏度如" }, { "name": "xref", "data": { "text": "表1", "type": "table", "rid": "T1", "data": [ { "name": "text", "data": "表1" } ] } }, { "name": "text", "data": "所示。四元器件在330 nm和780 nm处的最高响应度分别是2 057 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "和1 956 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，是目前有机光电探测器在两个波长处获得的最高响应度之一。高响应度与探测灵敏度能够提高倍增型有机光电探测器的弱光探测能力。" } ] }, { "name": "fig", "data": { "id": "F5", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图5" } ], "title": [ { "name": "text", "data": "(a)器件响应度光谱;(b)器件探测灵敏度光谱。" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.5" } ], "title": [ { "name": "text", "data": "(a)Responsivity spectra of devices. (b)Detectivity spectra of devices." } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352584&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352591&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352587&type=" } ] } } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "3.4　器件工作机理" } ], "level": "2", "id": "s3d" } }, { "name": "p", "data": [ { "name": "text", "data": "反向偏压和光照下，倍增型有机光电探测器中的电荷传输示意图如" }, { "name": "xref", "data": { "text": "图6", "type": "fig", "rid": "F6", "data": [ { "name": "text", "data": "图6" } ] } }, { "name": "text", "data": "所示。光从ITO电极入射，先被靠近ITO电极的材料吸收产生大量被电子陷阱捕获在ITO电极附近的光生电子，少量光会到达Al电极附近产生少量的光生电子被捕获在Al电极附近。这些靠近ITO电极的光生电子在偏压产生的电场" }, { "name": "italic", "data": [ { "name": "text", "data": "E" } ] }, { "name": "text", "data": "的作用下，会向Al电极方向移动，被电子陷阱捕获在Al电极附近的光生电子数越多，产生的库伦电场越强，能促使更多的空穴隧穿注入活性层形成光电流(光电流倍增)。反向偏压下，空穴隧穿注入活性层的数量由分布在Al电极附近的光生电子数决定。因此，反向偏压下的器件EQEs随偏压的增大而显著增强。 PC" }, { "name": "sub", "data": [ { "name": "text", "data": "71" } ] }, { "name": "text", "data": "BM与电子给体构成的电子陷阱深度比IEICO与电子给体构成的电子陷阱深度深，能促进激子在给体和受体界面处解离，单位时间内会产生更多的光生电子。因此，四元器件的光电流和EQEs显著大于相同条件下三元器件的光电流和EQE。" } ] }, { "name": "fig", "data": { "id": "F6", "caption": [ { "lang": "zh", "label": [ { "name": "text", "data": "图6" } ], "title": [ { "name": "text", "data": "器件在反向偏压下的电荷传输示意图" } ] }, { "lang": "en", "label": [ { "name": "text", "data": "Fig.6" } ], "title": [ { "name": "text", "data": "Schematic diagram of charge carriers transport in devices under reverse bias voltages" } ] } ], "subcaption": [], "note": [], "graphics": [ { "print": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352595&type=", "small": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352603&type=", "big": "http://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=21352599&type=" } ] } } ] } ] }, { "name": "sec", "data": [ { "name": "sectitle", "data": { "title": [ { "name": "text", "data": "4　结论" } ], "level": "1", "id": "s4" } }, { "name": "p", "data": [ { "name": "text", "data": "本文基于溶液法制备了以ITO/PEDOT∶PSS/活性层/Al为结构的四元和三元倍增型有机光电探测器。其中，P3HT∶PTB7-Th∶IEICO∶PC" }, { "name": "sub", "data": [ { "name": "text", "data": "71" } ] }, { "name": "text", "data": "BM以90∶10∶0.5∶0.5的质量比共混组成四元器件的本体异质结活性层，而三元器件的本体异质结活性层由P3HT∶PTB7-Th∶IEICO以90∶10∶1的质量比共混。随偏压增大，器件EQEs≫100%，并获得300~850 nm的宽光谱响应。在330 nm与780 nm处，四元器件的最高EQEs分别为773000%和311000%，最高响应度分别为2 057 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "和1 956 A·W" }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": "，是迄今为止有机光电探测器在紫外和近红外光区获得的最高EQE和响应度之一。-25 V偏压下，四元器件在光谱响应范围内的EQE平均值(388167%)、响应度平均值(1 604 A·W " }, { "name": "sup", "data": [ { "name": "text", "data": "-1" } ] }, { "name": "text", "data": ")及探测灵敏度平均值(3.6×10" }, { "name": "sup", "data": [ { "name": "text", "data": "13" } ] }, { "name": "text", "data": " Jones)分别是相同偏压下三元器件的1.5倍、1.5倍及1.4倍。四元器件在紫外和近红外光区的性能提升更显著。以上结果表明，多元本体异质结活性层是提高宽带倍增型有机光电探测器整体性能的一种有效策略，用以提高器件对弱光的探测能力，特别是器件对紫外和近红外弱光的探测能力。" } ] }, { "name": "p", "data": [ { "name": "text", "data": "本文专家审稿意见及作者回复内容的下载地址:http://cjl.lightpublishing.cn/thesisDetails#10.37188/CJL.20210142." } ] } ] } ], "footnote": [], "reflist": { "title": [ { "name": "text", "data": "参考文献:" } ], "data": [ { "id": "R1", "label": "[1]", "citation": [ { "lang": "en", "text": [ { "name": "text", "data": "DONG H L" }, { "name": "text", "data": ", " }, { "name": "text", "data": "ZHU H F" }, { "name": "text", "data": ", " }, { "name": "text", "data": "MENG Q" }, { "name": "text", "data": ", " }, { "name": "text", "data": "et al" }, { "name": "text", "data": ". 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