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高温热处理
增强出版a 面AlN表面形貌演变机理Mechanism of
a -AlN Surface Morphology Evolution by High Temperature Annealing- 发光学报 2021年42卷第6期 页码：810-817
- 作者机构：
1.中国科学院长春光学精密机械与物理研究所 发光学及应用国家重点实验室, 吉林 长春 130033
2.中国科学院大学 材料科学与光电工程中心, 北京 100049
3.北京北方华创微电子装备有限公司, 北京 100049
- 作者简介：
[ "隋佳恩(1995-)，男，山东威海人，硕士研究生， 2018年于山东大学获得学士学位，主要从事宽禁带半导体材料生长的研究。E-mail: suijiaen18@mails.ucac.ac.cn" ]
[ "孙晓娟(1981-)，女，辽宁朝阳人，博士，研究员，2012年于中国科学院长春光学精密机械与物理研究所获得博士学位，主要从事氮化物宽禁带半导体材料与光电器件的研究。E-mail: sunxj@ciomp.ac.cn" ]
- 基金信息：国家自然科学基金(61922078;61874118;62004127)
DOI：10.37188/CJL.20210111
中图分类号： O482.31纸质出版日期：2021-06-01，
收稿日期：2021-03-26，
修回日期：2021-04-22，
扫 描 看 全 文
隋佳恩, 贲建伟, 臧行, 等. 高温热处理
a 面AlN表面形貌演变机理[J]. 发光学报, 2021,42(6):810-817.Jia-en SUI, Jian-wei BEN, Hang ZANG, et al. Mechanism of
a -AlN Surface Morphology Evolution by High Temperature Annealing[J]. Chinese Journal of Luminescence, 2021,42(6):810-817.隋佳恩, 贲建伟, 臧行, 等. 高温热处理
a 面AlN表面形貌演变机理[J]. 发光学报, 2021,42(6):810-817. DOI： 10.37188/CJL.20210111.Jia-en SUI, Jian-wei BEN, Hang ZANG, et al. Mechanism of
a -AlN Surface Morphology Evolution by High Temperature Annealing[J]. Chinese Journal of Luminescence, 2021,42(6):810-817. DOI： 10.37188/CJL.20210111.
摘要
非极性
a
面AlN(
a
-AlN)能够从根本上解决极性AlN引起的量子限制斯塔克效应问题，是提升AlGaN发光器件效率的有效途径。但是，非极性AlN生长面临更大的挑战，目前难以实现低缺陷密度、高平整表面的非极性
a
-AlN。高温热处理是一种提高AlN质量的有效方法，但在热处理过程中，非极性
a
-AlN的表面形貌演变的物理机理尚不明确，直接影响了
a
-AlN表面改善与质量提升。本研究通过对
a
-AlN薄膜在不同条件下进行高温热处理，对样品的表面形貌演变过程进行了表征与分析，并结合第一性原理计算，揭示了高温热处理对非极性
a
-AlN表面的影响及其物理机理。结果表明，在高温热处理过程中Al、N原子更趋向于从
a
面与
m
面分解，而在
c
面吸附，使得
a
-AlN样品表面在高温热处理过程中出现了沿
c
轴方向的高取向性条纹原子台阶形貌，进而提高
a
-AlN材料质量。本研究为实现高质量非极性
a
-AlN材料及紫外发光器件提供了重要基础。
Abstract
Nonpolar
a
-AlN is the fundamental method to eliminate quantum-confined Stark effect
and further improve the efficiency of AlGaN-based devices such as light-emitting diodes. However
it is hard to obtain high quality nonpolar
a
-AlN on heterogeneous substrates because the large and inhomogeneous mismatch between the heterogeneous substrate and the epitaxial layer. High temperature annealing is an effective and repeatable method to improve the quality of AlN templates. However
the physical mechanism is still not clear on how the high temperature annealing method effects the surface morphology of non-polar AlN
which affects the quality improvement of
a
-AlN. In this work
the surface evolution of the
a
-AlN with high temperature annealing has been investigated and the mechanism of how the thermal annealing effects on the surface evolution has been explored both by experiment and first-principles calculations. It is found that the Al/N atoms tend to decompose along
a
-/
m
-plane AlN and reabsorb along
c
-plane AlN
which result in the phenomenon that the area of ordered stripes along
c
-axis increases with higher annealing temperature or longer annealing time. The research will provide deeper understanding on the mechanism of the HTA effect on
a
-AlN
which will be benefit to the fabrication of
a
-AlN related devices.
关键词
a-AlN高温热处理表面形貌演变结合能
Keywords
a-AlNhigh temperature annealingsurface morphology evolutionbinding energy
references
LI D B, JIANG K, SUN X J, et al. AlGaN photonics: recent advances in materials and ultraviolet devices [J].Adv. Opt. Photonics, 2018, 10(1):43-110.
BEN J W, SUN X J, JIA Y P, et al. Defect evolution in AlN templates on PVD-AlN/sapphire substrates by thermal annealing [J].CrystEngComm, 2018, 20(32):4623-4629.
JIANG K, SUN X J, BEN J W, et al. The defect evolution in homoepitaxial AlN layers grown by high-temperature metal-organic chemical vapor deposition [J].CrystEngComm, 2018, 20(19):2720-2728.
BRYAN I, BRYAN Z, BOBEA M, et al. Homoepitaxial AlN thin films deposited on m-plane (1<math id="M1"><mover accent="true"><mn>1</mn><mo>¯</mo></mover></math>00) AlN substrates by metalorganic chemical vapor deposition [J].J. Appl. Phys., 2014, 116(13):133517.
KIM H S, LIN J Y, JIANG H X, et al. Piezoelectric effects on the optical properties of GaN/AlxGa1-xN multiple quantum wells [J].Appl. Phys. Lett., 1998, 73(23):3426-3428.
MASUI H, NAKAMURA S, DENBAARS S P, et al. Nonpolar and semipolar Ⅲ-nitride light-emitting diodes:achievements and challenges [J].IEEE Trans. Electron Devices, 2010, 57(1):88-100.
ZHANG Z H, LIU W, JU Z G, et al. Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers [J].Appl. Phys. Lett., 2014, 104(24):243501-1-5.
CHANG J Y, CHANG H T, SHIH Y H, et al. Efficient carrier confinement in deep-ultraviolet light-emitting diodes with composition-graded configuration [J].IEEE Trans. Electron Devices, 2017, 64(12):4980-4984.
AKASAKA T, KOBAYASHI Y, MAKIMOTO T. Growth of nonpolar AlN(11<math id="M2"><mover accent="true"><mn>2</mn><mo>¯</mo></mover></math>0) and (1<math id="M3"><mover accent="true"><mn>1</mn><mo>¯</mo></mover></math>00) films on SiC substrates by flow-rate modulation epitaxy [J].Appl. Phys. Lett., 2007, 90(12):121919.
VENNÉGUÈS P, BOUGRIOUA Z. Epitaxial orientation of Ⅲ-nitrides grown on R-plane sapphire by metal-organic-vapor-phase epitaxy [J].Appl. Phys. Lett., 2006, 89(11):111915-1-3.
FAN R, HAO Z B, CHEN Z, et al. High quality AlN with a thin interlayer grown on a sapphire substrate by plasma-assisted molecular beam epitaxy [J].Chin. Phys. Lett., 2010, 27(6):068101-1-4.
SHIBATA T, ASAI K, NAKAMURA Y, et al. AlN epitaxial growth on off-angle R-plane sapphire substrates by MOCVD [J].J. Cryst. Growth, 2001, 229(1-4):63-68.
MIYAGAWA R, MIYAKE H, HIRAMATSU K. a-plane AlN and AlGaN growth on r-plane sapphire by MOVPE [J].Phys. Status Solidi C, 2010, 7(7-8):2107-2110.
OKADA N, KATO N, SATO S, et al. Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification [J].J. Cryst. Growth, 2007, 298:349-353.
OKADA N, KATO N, SATO S, et al. Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE [J].J. Cryst. Growth, 2007, 300(1):141-144.
贲建伟. AlN材料中缺陷调控及物性研究 [D].长春:中国科学院长春光学精密机械与物理研究所, 2019.
BEN J W. Defect Control and Physical Properties of AlN [D].Changchun:Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 2019. (in Chinese)
MATSUNAMI N, KAKIUCHIDA H, SATAKA M, et al. XRD characterization of AlN thin films prepared by reactive RF-sputter deposition [J].Adv. Mater. Phys. Chem., 2013, 3(1):101-107.
FOXON C T, NOVIKOV S V, STANTON N M, et al. Free-standing zinc-blende (cubic) GaN substrates grown by a molecular beam epitaxy process [J]Phys. Status Solidi B, 2008, 245(5):890-892.
MOGAMI Y, OSAWA A, OZAKI K, et al. Enhanced strain relaxation in AlGaN layers grown on sputter-based AlN templates [J].Phys. Status Solidi B, 2020, 257(4):1900590.
NAGAMATSU K, LIU X T, UESUGI K, et al. Improved emission intensity of UVC-LEDs from using strain relaxation layer on sputter-annealed AlN [J].Jpn. J. Appl. Phys., 2019, 58(SC):SCCC07-1-4.
LIN C H, YAMASHITA Y, MIYAKE H, et al. Fabrication of high-crystallinity a-plane AlN films grown on r-plane sapphire substrates by modulating buffer-layer growth temperature and thermal annealing conditions [J].J. Cryst. Growth, 2017, 468:845-850.
LIN C H, TAMAKI S, YAMASHITA Y, et al. Effects of AlN buffer layer thickness on the crystallinity and surface morphology of 10-μm-thick a-plane AlN films grown on r-plane sapphire substrates [J].Appl. Phys. Express, 2016, 9(8):081001-1-4.
JINNO D, OTSUKI S, SUGIMORI S, et al. Characterization and optimization of sputtered AlN buffer layer on r-plane sapphire substrate to improve the crystalline quality of nonpolar a-plane GaN [J].J. Cryst. Growth, 2017, 480:90-95.
AMMANN M W, BRODHOLT J P, DOBSON D P. DFT study of migration enthalpies in MgSiO3 perovskite [J].Phys. Chem. Miner., 2009, 36(3):151-158.
PERDEW J P, BURKE K, ERNZERHOF M. Generalized gradient approximation made simple [J].Phys. Rev. Lett., 1996, 77(18):3865-3868.
KRESSE G, JOUBERT D. From ultrasoft pseudopotentials to the projector augmented-wave method [J].Phys. Rev. B, 1999, 59(3):1758-1775.
JINDAL V, SHAHEDIPOUR-SANDVIK F. Density functional theoretical study of surface structure and adatom kinetics for wurtzite AlN [J].J. Appl. Phys., 2009, 105(8):084902-1-6.
余云鹏, 林舜辉, 黄翀, 等. 非晶硅薄膜厚度均匀性对其透射光谱的影响 [J].汕头大学学报(自然科学版), 2004, 19(1):50-54.
YU Y P, LIN S H, HUANG C, et al. Effect of thickness homogeneity on optical transmittance spectra of a-Si∶H films [J].J. Shantou Univ. (Nat. Sci.), 2004, 19(1):50-54. (in Chinese)
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