TIAN Wei-nan, XIONG Cong, WANG Xin etc. Impurity-free Vacancy Diffusion Induces Intermixing in GaInP/AlGaInP Quantum Wells Using GaAs Encapsulation[J]. Chinese Journal of Luminescence, 2018,39(8): 1095-1099
TIAN Wei-nan, XIONG Cong, WANG Xin etc. Impurity-free Vacancy Diffusion Induces Intermixing in GaInP/AlGaInP Quantum Wells Using GaAs Encapsulation[J]. Chinese Journal of Luminescence, 2018,39(8): 1095-1099 DOI: 10.3788/fgxb20183908.1095.
Impurity-free vacancy diffusion (IFVD) induced quantum well intermixing (QWI) of red light diode laser wafer using GaAs encapsulation is explored. The wafer has an active region of a 9 nm-thick GaInP quantum well and two 350 nm-thick AlGaInP barriers. The GaAs dielectric layer is prepared through MOCVD. The QWI is induced by rapid thermal annealing at 950℃ at different times and different thicknesses of GaAs. Blue shifts and full width at half maximum (FWHM) are obtained through photoluminescence tests. A maximum blue shift of 53.4 nm is obtained at 120 s and an optimal FWHM of 18 nm by the IFVD-induced QWI is noted at 1 min.
关键词
蓝移无杂质空位扩散量子阱混杂扩散
Keywords
blue shiftimpurity-free vacancy diffusionquantum well intermixingdiffusion
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