预制层溅射气压对CIGS薄膜结构及器件的影响

李光旻; 刘玮; 林舒平; 李晓东; 周志强; 何青; 张毅; 刘芳芳; 孙云

doi:10.3788/fgxb20153602.0192

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预制层溅射气压对CIGS薄膜结构及器件的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 预制层溅射气压对CIGS薄膜结构及器件的影响
- Influence of Sputtering Pressure on The Structure and Device Properties of CIGS Thin Films
- 发光学报 2015年36卷第2期页码：192-199
- 作者机构：
  
  1. 天津城建大学理学院应用物理系天津,300084
  2. 南开大学电子信息与光学工程学院光电子薄膜与器件研究所天津,300071
- 作者简介：
- 基金信息：
  
  国家自然科学基金(61076061)资助项目()
- DOI：10.3788/fgxb20153602.0192
  中图分类号： O484.4
- 纸质出版日期：2015-2-3，
  
  收稿日期：2014-11-25，
  
  修回日期：2014-12-16，
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李光旻, 刘玮, 林舒平等. 预制层溅射气压对CIGS薄膜结构及器件的影响[J]. 发光学报, 2015,36(2): 192-199

LI Guang-min, LIU Wei, LIN Shu-ping etc. Influence of Sputtering Pressure on The Structure and Device Properties of CIGS Thin Films[J]. Chinese Journal of Luminescence, 2015,36(2): 192-199
李光旻, 刘玮, 林舒平等. 预制层溅射气压对CIGS薄膜结构及器件的影响[J]. 发光学报, 2015,36(2): 192-199 DOI： 10.3788/fgxb20153602.0192.

LI Guang-min, LIU Wei, LIN Shu-ping etc. Influence of Sputtering Pressure on The Structure and Device Properties of CIGS Thin Films[J]. Chinese Journal of Luminescence, 2015,36(2): 192-199 DOI： 10.3788/fgxb20153602.0192.

摘要

研究了金属预制层制备过程中溅射气压对Cu(In

)Se

(CIGS)薄膜及电池器件性能的影响.通过调节溅射气压改变预制层的结晶状态及疏松度与粗糙度

在合适的预制层结构下

活性硒化热处理过程中

可使Ga有效地掺入到薄膜中形成优质的CIGS固溶体.高溅射气压会使预制层过于致密

呈现非晶态趋势.经活性硒化热处理后

CIGS薄膜容易产生CIS与CGS"两相分离"现象

从而导致CIGS薄膜太阳电池的开路电压和填充因子降低

电池转换效率由10.03%降低到5.02%.

Abstract

The influence of sputtering pressure on the structure and device performances of Cu(In

)Se

(CIGS) thin films is investigated. The crystalline and roughness of precursors can be moderated by choosing appropriate sputtering pressure

which may facilitate Ga incorporation into the lattice during the selenization process. With the sputtering pressure increases

the precursors tend to be amorphous state and become denser. As a result

the selenized films may display "phase separation" of CIS and CGS which results in decrease of

and

and the cell efficiency drops from 10.03% to 5.02%.

关键词

溅射气压粗糙度CIGS固溶体

Keywords

sputtering pressureroughnessCIGS solid solution

references

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