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1. 中国科学院大学 北京,100049
2. 发光学及应用国家重点实验室 中国科学院长春光学精密机械与物理研究所,吉林 长春,130033
纸质出版日期:2012-11-10,
收稿日期:2012-4-18,
修回日期:2012-5-8,
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张立森, 宁永强, 刘迪, 张星, 秦莉, 刘云, 王立军. 大功率垂直腔面发射激光器列阵的热模拟及优化[J]. 发光学报, 2012,(11): 1247-1251
ZHANG Li-sen, NING Yong-qiang, LIU Di, ZHANG Xing, QIN Li, LIU Yun, WANG Li-jun. Thermal Simulation and Optimization of Structure in High-power Vertical Cavity Surface Emitting Laser Array[J]. Chinese Journal of Luminescence, 2012,(11): 1247-1251
张立森, 宁永强, 刘迪, 张星, 秦莉, 刘云, 王立军. 大功率垂直腔面发射激光器列阵的热模拟及优化[J]. 发光学报, 2012,(11): 1247-1251 DOI: 10.3788/fgxb20123311.1247.
ZHANG Li-sen, NING Yong-qiang, LIU Di, ZHANG Xing, QIN Li, LIU Yun, WANG Li-jun. Thermal Simulation and Optimization of Structure in High-power Vertical Cavity Surface Emitting Laser Array[J]. Chinese Journal of Luminescence, 2012,(11): 1247-1251 DOI: 10.3788/fgxb20123311.1247.
对垂直腔面发射激光器的产热情况进行了分析
简化了热源
建立了列阵的热传导模型
利用Comsol Multiphysics软件对模型进行了模拟计算。通过改变底发射列阵的单元直径和间距
对列阵的温升进行了计算。研制了4×4、5×5和8×8三种不同尺寸的列阵
功率分别为580
1 440
2 100 mW
对应功率密度分别为115
374
853 W/cm
2
。通过光谱的波长漂移计算出4 A时的温升分别为120
58
38℃。采用小孔径单元制作的列阵可以有效地降低列阵单元间的热串扰
获得高功率输出。
The heating distribution of vertical cavity surface emitting laser array (VCSEL) is analyzed. The heating source is simplified and the heat transport model is established. The Comsol Multiphysics software is used for all numerical simulations. The temperature rise is computed by changing the cell diameter and gap between the adjacent cells. Three kinds of arrays are manufactured: 4×4
5×5 and 8×8. The power are 580
1 440 and 2 100 mW
the corresponding power density are 115
374 and 853 W/cm
2
respectively. The values of temperature rise at 4 A are 120
58 and 38℃
which are obtained by redshift of wavelength. The arrays made up of small size cells can effectively reduce the thermal crosstalk and improve the output power.
垂直腔面发射激光器列阵大功率热串扰
vertical cavity surface emitting laser arrayhigh powerthermal crosstalk
Wang Z F, Ning Y Q, Li T,et al. High-power large-aperture bottom-emitting 980-nm VCSELs with integrated GaAs microlens [J]. IEEE Photonics Technology Letters, 2009, 21(4):239-241.
Zhang L S, Ning Y Q, Zeng Y G,et al. High-power bottom-emitting vertical-cavity surface-emitting lasers under continuous-wave, quasi-continuous-wave, and pulsed operation [J]. Appl. Phys. Exp., 2011, 4:052102-1-3.
Zhang Y, Ning Y Q, Qin L,et al. Design and fabrication of vertical-cavity surface-emitting laser with small divergence [J]. Chin. J. Lumin.(发光学报), 2011, 32(1):47-52 (in Chinese).
Ma Q, Tian Z H, Wang Z F,et al. A theoretical model of high power VCSEL based on the thermal-offset-current [J]. Chin. J. Lumin.(发光学报), 2009, 30(4):463-466 (in Chinese).
Li T, Ning Y Q, Sun Y F,et al. High-power InGaAs VCSEL's single devices and 2-D arrays [J]. J. Lumin., 2007, 122(123):571-573.
D'Asro L A, Jean F S, James D W. High-power, high-efficiency VCSELs pursue the goal [J]. Photonics Spectra, 2005, 39(2):64-66.
Michael M, Martin G, Roger K,et al. Improved output performance of high-power VCSELs [J]. IEEE Journal on Selected Topics in Quantum Electronics, 2001, 7(2):210-216.
Jean F S, Chuni L G, Viktor K,et al. High-power vertical-cavity surface-emitting arrays[J]. SPIE, 2008, 6876:68760D-1-9.
Hou L F, Feng Y, Yang Y Z,et al. The wet etching process of high-power VCSEL [J]. Chin. J. Lumin.(发光学报), 2011, 32(6):598-602 (in Chinese).
Zhang Y, Ning Y Q, Wang Y,et al. High power nonunicform linear vertical-cavity surface-emitting laser array with a Gaussian far-field distribution [J]. Optics Communications, 2010, 283(13):2719-2723.
Wang Z F, Ning Y Q, Zhang Y,et al. High power and good beam quality of two-dimensional VCSEL array with integrated GaAs microlens array [J]. Opt. Exp., 2010, 18(23):23900-23905.
Holger M, Raimond D, Stephan G,et al. Design of high power VCSEL arrays [J]. SPIE, 2012, 8276(82760B):1-8.
Shi J J, Qin L, Ning Y Q,et al. Coherent measurement and analysis of verticalcavity surfaceemitting laser [J]. Chin. J. Lumin. (发光学报), 2011, 32(8):834-838 (in Chinese).
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