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2.8 μm Passively Q-switched Er∶YAP Laser Based on VSe2 Broadband Saturable Absorber
Device Fabrication and Physics | 更新时间：2026-09-11

    • 2.8 μm Passively Q-switched Er∶YAP Laser Based on VSe2 Broadband Saturable Absorber

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    • Chinese Journal of Luminescence   Vol. 47, Issue 6, Pages: 1052-1059(2026)

    • DOI：10.37188/CJL.20250293    

      CLC： TN248.1
    • CSTR：32170.14.CJL.20250293    

    • Received：29 December 2025，

      Revised：2026-01-13，

      Published：25 June 2026

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  • CAI Junhao,LI Mingda,PEI Hao,et al.2.8 μm Passively Q-switched Er∶YAP Laser Based on VSe2 Broadband Saturable Absorber[J].Chinese Journal of Luminescence,2026,47(06):1052-1059. DOI: 10.37188/CJL.20250293. CSTR: 32170.14.CJL.20250293. DOI：

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