Photonic Neuron Based on Memristor with Ultra-thin Alumina Insulating Modification Layer
|更新时间:2026-01-05
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Photonic Neuron Based on Memristor with Ultra-thin Alumina Insulating Modification Layer
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“The latest research breaks through the performance bottleneck of metal oxide memristors and provides new strategies for the development of neural morphology computing.”
Chinese Journal of LuminescencePages: 1-11(2026)
作者机构:
1.福建理工大学 微电子技术研究中心, 福建 福州 350108
2.厦门理工学院 材料科学与工程学院, 福建 厦门 361024
作者简介:
基金信息:
the General Program of Natural Science Foundation of Fujian Province under Grant(2021J011082);Supported by the National Natural Science Foundation of China(62304189)
ZHANG Guocheng,ZENG Zili,TANG Jianchuan,et al.Photonic Neuron Based on Memristor with Ultra-thin Alumina Insulating Modification Layer[J].Chinese Journal of Luminescence,
ZHANG Guocheng,ZENG Zili,TANG Jianchuan,et al.Photonic Neuron Based on Memristor with Ultra-thin Alumina Insulating Modification Layer[J].Chinese Journal of Luminescence,DOI:10.37188/CJL.20250243 CSTR: 32170.14.CJL.20250243.
Photonic Neuron Based on Memristor with Ultra-thin Alumina Insulating Modification Layer增强出版