Highly Sensitive Broad Organic Photodetector Based on Alumina Interface Modification Layer
|更新时间:2025-05-16
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Highly Sensitive Broad Organic Photodetector Based on Alumina Interface Modification Layer
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“New progress has been made in the research of organic photodetectors. By introducing an aluminum oxide interface modification layer through atomic layer deposition technology, the sensitivity and wide spectral response characteristics of the device have been effectively improved, providing new ideas for the design of high sensitivity and wide spectral response organic photodetectors.”
the National Natural Science Foundation of China(62205235;U21A20496;62174117);山西省留学回国人员科技活动择优资助项目(20230011);Research Program Supported by Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering(2022SX-TD020);the Central Government Guides Local Funds for Scientific and Technological Development(YDZJSX20231A010);量子光学与量子光学器件国家重点实验室项目(KF202306)
LI Yaojiang,SHI Linlin,SUN Xinyu,et al.Highly Sensitive Broad Organic Photodetector Based on Alumina Interface Modification Layer[J].Chinese Journal of Luminescence,
LI Yaojiang,SHI Linlin,SUN Xinyu,et al.Highly Sensitive Broad Organic Photodetector Based on Alumina Interface Modification Layer[J].Chinese Journal of Luminescence,DOI:10.37188/CJL.20250137 CSTR: 32170.14.CJL.20250137.
Highly Sensitive Broad Organic Photodetector Based on Alumina Interface Modification Layer增强出版