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Influence of 2 nm GaAs Insertion Layer on 905 nm InGaAs Multi Quantum Well Luminescence
Synthesis and Properties of Materials | 更新时间：2026-09-12

    • Influence of 2 nm GaAs Insertion Layer on 905 nm InGaAs Multi Quantum Well Luminescence

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    • Chinese Journal of Luminescence   Vol. 45, Issue 12, Pages: 2011-2020(2024)

    • DOI：10.37188/CJL.20240243    

      CLC： O482.31

    • Received：30 September 2024，

      Revised：2024-10-17，

      Published：25 December 2024

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  • GAN Lulu,WANG Haizhu,ZHANG Chong,et al.Influence of 2 nm GaAs Insertion Layer on 905 nm InGaAs Multi Quantum Well Luminescence[J].Chinese Journal of Luminescence,2024,45(12):2011-2020. DOI： 10.37188/CJL.20240243.

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MA Xiaohui
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ZHAO Shucun
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Related Institution

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Changchun Institute of Physics, Chinese Academy of Sciences
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