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The Influence of 2 nm GaAs Insertion Layer on 905 nm InGaAs Multi Quantum Well Luminescence
更新时间：2024-10-30
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    • The Influence of 2 nm GaAs Insertion Layer on 905 nm InGaAs Multi Quantum Well Luminescence

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    • “最新研究揭示，GaAs插入层能优化InGaAs多量子阱材料表面粗糙度和结晶质量，增强发光效果，对提升材料光学性能具有重要意义。”
    • Chinese Journal of Luminescence   Pages: 1-10(2024)

    • DOI：10.37188/CJL.20240243    

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    • Published Online：30 September 2024，

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  • GAN Lulu,WANG Haizhu,ZHANG Chong,et al.The Influence of 2 nm GaAs Insertion Layer on 905 nm InGaAs Multi Quantum Well Luminescence[J].Chinese Journal of Luminescence, DOI：10.37188/CJL.20240243

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Related Institution

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