Energy Transfer and Photoluminescence Enhancement in WS2/hBN/MoS2 Heterostructures
Device Fabrication and Physics|更新时间:2025-01-10
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Energy Transfer and Photoluminescence Enhancement in WS2/hBN/MoS2 Heterostructures
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“In the field of 2D transition metal dichalcogenides, researchers have reported a photoluminescence enhancement effect of 1L WS2 at room temperature when constructing it into 1L-WS2/hBN/1L-MoS2 vertical heterostructures. The photoluminescence enhancement factors can be up to 4.2, which provides a feasible way to optimize the performance of TMD-based optoelectronic devices.”
Chinese Journal of LuminescenceVol. 45, Issue 12, Pages: 2021-2029(2024)
CHEN PENGYAO, REN BINGYAN, ZHANG CHENGYU, et al. Energy Transfer and Photoluminescence Enhancement in WS2/hBN/MoS2 Heterostructures. [J]. Chinese journal of luminescence, 2024, 45(12): 2021-2029.
DOI:
CHEN PENGYAO, REN BINGYAN, ZHANG CHENGYU, et al. Energy Transfer and Photoluminescence Enhancement in WS2/hBN/MoS2 Heterostructures. [J]. Chinese journal of luminescence, 2024, 45(12): 2021-2029. DOI: 10.37188/CJL.20240238.
Energy Transfer and Photoluminescence Enhancement in WS2/hBN/MoS2 Heterostructures增强出版