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Research and Fabrication of 1.55 μm High Power Single Transverse Mode Laser
Device Fabrication and Physics | 更新时间：2024-07-25
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    • Research and Fabrication of 1.55 μm High Power Single Transverse Mode Laser

      增强出版
    • “在光电子集成领域，研究人员通过优化激光器外延P-InP掺杂和采用锥形波导结构，成功研制出低功耗高功率半导体激光器，为长距离主干网光网络和无人驾驶等应用提供研究基础。”
    • Chinese Journal of Luminescence   Vol. 45, Issue 7, Pages: 1189-1195(2024)

    • DOI：10.37188/CJL.20240088    

      CLC： O472

    • Published：25 July 2024，

      Received：29 March 2024，

      Revised：16 April 2024，

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  • XUE Zhengqun,CHI Bingkun,CHEN Yuping.Research and Fabrication of 1.55 μm High Power Single Transverse Mode Laser[J].Chinese Journal of Luminescence,2024,45(07):1189-1195. DOI： 10.37188/CJL.20240088.

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