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Research and fabrication of 1.55μm high power single transverse mode laser
更新时间:2024-05-06
    • Research and fabrication of 1.55μm high power single transverse mode laser

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    • 一项关于1.55 μm高功率半导体激光器的研究取得了显著进展。该研究针对激光器的性能优化,通过改进外延P-InP掺杂技术,成功降低了激光器的串联电阻,减少了电功耗。同时,研究团队还采用了锥形波导结构,提高了激光器的增益体积,进一步提升了激光出光功率。这项研究不仅展示了激光器性能的优化,还为其在光电子集成领域的应用提供了有力支持。通过降低功耗和提高出光功率,这种激光器有望在未来长距离主干网光网络、无人驾驶等领域发挥重要作用,提升系统的工作距离和接收端的信噪比。总体而言,这项研究为光电子集成应用中的低功耗高功率半导体激光器奠定了坚实的研究基础,推动了相关领域的技术进步。
    • Chinese Journal of Luminescence   Pages: 1-8(2024)
    • DOI:10.37188/CJL.20240088    

      CLC: O472
    • Published Online:05 May 2024

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  • XUE Zhengqun,CHI Bingkun,CHEN Yuping.Research and fabrication of 1.55μm high power single transverse mode laser[J].Chinese Journal of Luminescence, DOI:10.37188/CJL.20240088

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