Research and Fabrication of 1.55 μm High Power Single Transverse Mode Laser
Device Fabrication and Physics|更新时间:2024-08-06
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Research and Fabrication of 1.55 μm High Power Single Transverse Mode Laser
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“In the field of optoelectronic integration applications, researchers have successfully developed low-power and high-power semiconductor lasers by optimizing the laser epitaxial P-InP doping and adopting a tapered waveguide structure, providing a solution for improving the system's working distance and signal-to-noise ratio at the receiving end.”
Chinese Journal of LuminescenceVol. 45, Issue 7, Pages: 1189-1195(2024)
作者机构:
1.福州大学 先进制造学院, 福建 泉州 362251
2.厦门市芯诺通讯科技有限公司, 福建 厦门 361011
作者简介:
基金信息:
Science and Technology Plan Project of Fujian Province(2021H4016);Science and Technology Plan Project of Quanzhou City(2021G13);Chuying Young Talents Program Project of Fujian Province(2022173)
XUE Zhengqun,CHI Bingkun,CHEN Yuping.Research and Fabrication of 1.55 μm High Power Single Transverse Mode Laser[J].Chinese Journal of Luminescence,2024,45(07):1189-1195.
XUE Zhengqun,CHI Bingkun,CHEN Yuping.Research and Fabrication of 1.55 μm High Power Single Transverse Mode Laser[J].Chinese Journal of Luminescence,2024,45(07):1189-1195. DOI: 10.37188/CJL.20240088.
Research and Fabrication of 1.55 μm High Power Single Transverse Mode Laser增强出版