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Regulating Near-infrared Luminescence of ZnGa2O4∶Cr3+ via F/O Anion Substitution
Synthesis and Properties of Materials | 更新时间：2024-09-25
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    • Regulating Near-infrared Luminescence of ZnGa2O4∶Cr3+ via F/O Anion Substitution

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    • “在发光材料领域，研究人员采用高温固相法制备了ZnGa2O4∶xCr3+，yMgF2荧光粉，研究其物相结构和发光性能。结果表明，MgF2掺杂起主导作用的是F离子，F/O阴离子取代形成局域环境不同的［CrO6］和［Cr（O，F）6］发光中心，使ZnGa2O4∶Cr3+发光谱显著宽化。进而通过增加Cr3+浓度使发射谱不断红移，实现了峰值波长689~900 nm波段可调发光；稳/瞬态光谱学分析表明谱峰大幅红移来自于不同Cr3+发光中心间的能量传递。优化样品ZnGa2O4∶0.1Cr3+，0.2MgF2（ZMGOF∶0.1Cr3+）表现出较好的综合性能，蓝光激发下宽带近红外发射覆盖700~1 200 nm波段，峰值波长885 nm、半高宽215 nm；且具有较为优异的发光效率和热稳定性，内、外量子效率分别为92.3%和48.1%，100 ℃强度保持率约89.6%。采用ZMGOF∶0.1Cr3+荧光粉封装制成的LED器件在100 mA电流驱动下近红外光输出功率约34.5 mW，能量转换效率约12.3%。”
    • Chinese Journal of Luminescence   Vol. 45, Issue 6, Pages: 923-931(2024)

    • DOI：10.37188/CJL.20240087    

      CLC： O482.31

    • Published：25 June 2024，

      Received：29 March 2024，

      Revised：12 April 2024，

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  • WU Yubo,YU Shijie,HUANG Qianxing,et al.Regulating Near-infrared Luminescence of ZnGa2O4∶Cr3+via F/O Anion Substitution[J].Chinese Journal of Luminescence,2024,45(06):923-931. DOI： 10.37188/CJL.20240087.

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