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Effects of Growth Parameters on Stimulated Emission Characteristics of AlGaN-based Deep Ultraviolet Multiple Quantum Wells on 4H-SiC Substrates
Synthesis and Properties of Materials | 更新时间：2024-09-25
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    • Effects of Growth Parameters on Stimulated Emission Characteristics of AlGaN-based Deep Ultraviolet Multiple Quantum Wells on 4H-SiC Substrates

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    • “In the field of deep ultraviolet lasers, researchers have achieved high internal quantum efficiency and low threshold laser emission by optimizing growth parameters, providing new ideas for the development of high-performance AlGaN based lasers.”
    • Chinese Journal of Luminescence   Vol. 45, Issue 6, Pages: 894-904(2024)

    • DOI：10.37188/CJL.20240080    

      CLC： O482.31

    • Published：25 June 2024，

      Received：26 March 2024，

      Revised：10 April 2024，

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  • ZHANG Ruijie,GUO Yanan,WU Han,et al.Effects of Growth Parameters on Stimulated Emission Characteristics of AlGaN-based Deep Ultraviolet Multiple Quantum Wells on 4H-SiC Substrates[J].Chinese Journal of Luminescence,2024,45(06):894-904. DOI： 10.37188/CJL.20240080.

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Related Author

LIU Zhibin
WU Han
LI Jinmin
LIU Wen-jun
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LYU You-ming
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Related Institution

College of Materials Science and Engineering, Shenzhen University, Shenzhen Key Laboratory of Special Functional Materials
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Department of Physics, Jilin University
School of Science, Changchun University of Science and Technology
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