Characterization and Growth Mechanisms of Low Dimensional InP Materials
Synthesis and Properties of Materials|更新时间:2024-09-25
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Characterization and Growth Mechanisms of Low Dimensional InP Materials
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“Indium phosphide (InP), a significant III-V semiconductor material, has been extensively studied for its unique optical and electrical properties, with potential applications in optoelectronics, catalysis, and medicine. Researchers have successfully synthesized high-quality InP nanowires and nanopillars using chemical vapor deposition (CVD) and in-situ growth methods, respectively. The nanomaterials were characterized using SEM, EDS, XPS, Raman spectroscopy, and TEM, revealing a high degree of crystallinity and single crystal structure. The growth mechanisms were identified as vapor-liquid-solid (VLS) for nanowires and solid-liquid-solid (SLS) for nanopillars, offering new insights into the controlled preparation and large-scale production of InP nanomaterials.”
Chinese Journal of LuminescenceVol. 45, Issue 5, Pages: 779-793(2024)