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Ultrafast Laser Lift-off of Semipolar GaN-based LEDs on Sapphire Substrates
Luminescence Industry and Technology Frontier | 更新时间：2024-04-26
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    • Ultrafast Laser Lift-off of Semipolar GaN-based LEDs on Sapphire Substrates

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    • Chinese Journal of Luminescence   Vol. 45, Issue 4, Pages: 681-687(2024)

    • DOI：10.37188/CJL.20240010    

      CLC： TN364+.2;TN312.8

    • Published：05 April 2024，

      Received：11 January 2024，

      Revised：31 January 2024，

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  • XIANG Wenci,SUN Hao,WANG Sibo,et al.Ultrafast Laser Lift-off of Semipolar GaN-based LEDs on Sapphire Substrates[J].Chinese Journal of Luminescence,2024,45(04):681-687. DOI： 10.37188/CJL.20240010.

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Related Author

XIANG Wenci
SUN Hao
WANG Sibo
ZHOU Huilian
SHUAI Lingxiao
YE Yunxia
ZHANG Yun
GUO Yunyun

Related Institution

Department of Optoelectronic Information Science and Engineering ，School of Mechanical Engineering， Jiangsu University，Zhengjiang
College of Physics and Information Engineering， Fuzhou University
Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China
School of Nano-Tech and Nano-Bionics, University of Science and Technology of China
Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences
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