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n-Ga1-xAlxAs的能带结构和Hall迁移率
更新时间：2020-08-11

    • n-Ga1-xAlxAs的能带结构和Hall迁移率

    • Chinese Journal of Luminescence   Vol. 2, Issue 1, Pages: 1-10(1981)

    • Received：20 December 1981，

      Published：02 March 1981

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  • . [J]. Chinese Journal of Luminescence, 1981,2(1): 1-10 DOI：

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