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Fabrication of Ga2O3/NiO Heterojunction Barrier Schottky Diodes
更新时间：2026-08-19

    • Fabrication of Ga2O3/NiO Heterojunction Barrier Schottky Diodes

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    • Chinese Journal of Luminescence   Pages: 1-8(2026)

    • DOI：10.37188/CJL.20260241    

      CLC： O482.31
    • CSTR：32170.14.CJL.20260241    

    • Online First：19 August 2026，

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  • CHENG Siyuan,WANG Zhe,ZHANG Zhao,et al.Fabrication of Ga2O3/NiO Heterojunction Barrier Schottky Diodes[J].Chinese Journal of Luminescence,DOI:10.37188/CJL.20260241 CSTR: 32170.14.CJL.20260241. DOI：

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