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Thermal Stress Suppression of High-power Semiconductor Laser Bars Based on Ga-diamond Room-temperature Packaging
Device Fabrication and Physics | 更新时间：2026-08-27

    • Thermal Stress Suppression of High-power Semiconductor Laser Bars Based on Ga-diamond Room-temperature Packaging

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    • Chinese Journal of Luminescence   Vol. 47, Issue 8, Pages: 1492-1500(2026)

    • DOI：10.37188/CJL.20260118    

      CLC： TN248.4
    • CSTR：32170.14.CJL.20260118    

    • Received：03 April 2026，

      Revised：2026-04-11，

      Online First：24 April 2026，

      Published：25 August 2026

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  • MENG Qingkai,ZHANG Jiachen,WU Shunhua,et al.Thermal Stress Suppression of High-power Semiconductor Laser Bars Based on Ga-diamond Room-temperature Packaging[J].Chinese Journal of Luminescence,2026,47(08):1492-1500. DOI： 10.37188/CJL.20260118. CSTR： 32170.14.CJL.20260118.

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