您当前的位置:
首页 >
文章列表页 >
2.8 μm Passively Q-switched Er∶YAP Laser Based on VSe2 Broadband Saturable Absorber
Device Fabrication and Physics | 更新时间:2026-06-24
    • 2.8 μm Passively Q-switched Er∶YAP Laser Based on VSe2 Broadband Saturable Absorber

      增强出版
    • Chinese Journal of Luminescence   Vol. 47, Issue 6, Pages: 1052-1059(2026)
    • DOI:10.37188/CJL.20250293    

      CLC: TN248.1
    • CSTR:32170.14.CJL.20250293    
    • Received:29 December 2025

      Revised:2026-01-13

      Published:25 June 2026

    移动端阅览

  • CAI Junhao,LI Mingda,PEI Hao,et al.2.8 μm Passively Q-switched Er∶YAP Laser Based on VSe2 Broadband Saturable Absorber[J].Chinese Journal of Luminescence,2026,47(06):1052-1059. DOI: 10.37188/CJL.20250293. CSTR: 32170.14.CJL.20250293. DOI:

  •  
  •  

0

Views

280

下载量

0

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

Mid-infrared Emission Properties of Ho3+-doped Fluorozirconate Glasses Pumped by 1 150 nm Laser
Mid-infrared High-power Quantum Cascade Laser Grown by MOCVD
Research Progress of Mid-infrared Supercontinuum Generation Based on Soft Glass Fiber
Infrared Optical Properties of Er3+ Doped Na5Lu9F32 Single Crystal
Optical Thermometry Based on Negative Thermal Quenching Characteristics of Sc2Mo3O12∶Dy3+

Related Author

CAI Junhao
ZHAO Haiyan
LU Zhizhong
TIAN Ke
JIA Shijie
WANG Shunbin
WANG Xin
WANG Pengfei

Related Institution

School of Electronic Information, Huanghuai University
Qingdao Innovation and Development Center, Harbin Engineering University
College of Physics and Optoelectronic Engineering, Harbin Engineering University
College of Intelligent Systems Science and Engineering, Harbin Engineering University
Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences
0