High Stability Near-infrared Microsphere Laser Doped with Ho3+ Ions
Device Fabrication and Physics|更新时间:2025-10-30
|
High Stability Near-infrared Microsphere Laser Doped with Ho3+ Ions
增强出版
“In the field of laser technology, researchers have developed a micro scale microsphere cavity near-infrared laser emitting device with high Q value and high optical damage threshold, which can work stably in complex environments.”
Chinese Journal of LuminescenceVol. 46, Issue 10, Pages: 1948-1952(2025)
作者机构:
1.哈尔滨工程大学 物理与光电工程学院, 黑龙江 哈尔滨 150001
2.哈尔滨工程大学 智能科学与工程学院, 黑龙江 哈尔滨 150001
3.东北师范大学 物理学院, 吉林 长春 130000
作者简介:
基金信息:
National Natural Science Foundation of China(62225502;62435013;62375061;62090061;62090062;62205085;62405075)