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Study on the Influence of AlGaAs Insertion Structure on the Luminescence Characteristics of InAlGaAs/AlGaAs Multiple Quantum Wells
更新时间：2025-01-08
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    • Study on the Influence of AlGaAs Insertion Structure on the Luminescence Characteristics of InAlGaAs/AlGaAs Multiple Quantum Wells

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    • “New progress has been made in the research of InAlGaAs/AlGaAs multi quantum well materials, and the optical performance of quantum wells has been significantly improved through the rational design of insertion layers.”
    • Chinese Journal of Luminescence   Pages: 1-8(2025)

    • DOI：10.37188/CJL.20240318    

      CLC：
    • CSTR：32170. 14. CJL. 20240318    

    • Published Online：08 January 2025，

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  • ZHAO SHUCUN, WANG HAIZHU, WANG DENGKUI, et al. Study on the Influence of AlGaAs Insertion Structure on the Luminescence Characteristics of InAlGaAs/AlGaAs Multiple Quantum Wells. [J/OL]. Chinese journal of luminescence, 2025, 1-8. DOI： 10.37188/CJL.20240318. CSTR： 32170. 14. CJL. 20240318.

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