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Influence of AlGaAs Insertion Structure on Luminescence Characteristics of InAlGaAs/AlGaAs Multiple Quantum Wells
Synthesis and Properties of Materials | 更新时间：2025-04-21

    • Influence of AlGaAs Insertion Structure on Luminescence Characteristics of InAlGaAs/AlGaAs Multiple Quantum Wells

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    • “New progress has been made in the research of InAlGaAs/AlGaAs multi quantum well materials, and the optical performance of quantum wells has been significantly improved through the rational design of insertion layers.”
    • Chinese Journal of Luminescence   Vol. 46, Issue 4, Pages: 683-690(2025)

    • DOI：10.37188/CJL.20240318    

      CLC： O482.31
    • CSTR：32170. 14. CJL. 20240318    

    • Received：05 December 2024，

      Revised：23 December 2024，

      Published：25 April 2025

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  • ZHAO Shucun,WANG Haizhu,WANG Dengkui,et al.Influence of AlGaAs Insertion Structure on Luminescence Characteristics of InAlGaAs/AlGaAs Multiple Quantum Wells[J].Chinese Journal of Luminescence,2025,46(04):683-690. DOI： 10.37188/CJL.20240318. CSTR： 32170. 14. CJL. 20240318.

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