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Impact of Oxygen Vacancy on Performance of Amorphous InGaZnO Based Schottky Barrier Diode
Invited Paper | 更新时间：2025-03-24
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    • Impact of Oxygen Vacancy on Performance of Amorphous InGaZnO Based Schottky Barrier Diode

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    • “In the realm of energy harvesting microsystems, rectifying circuits are indispensable for converting AC to DC. This study introduces its research progress in optimizing diode performance by modulating oxygen vacancy concentration in InGaZnO films. Expert researchers effectively controlled the diode's electrical performance by adjusting oxygen vacancy, providing a methodology for optimizing rectifying diodes.”
    • Chinese Journal of Luminescence   Vol. 46, Issue 3, Pages: 412-420(2025)

    • DOI：10.37188/CJL.20240265    

      CLC： TN311.7
    • CSTR：32170. 14. CJL. 20240265    

    • Received：20 October 2024，

      Revised：09 December 2024，

      Published：25 March 2025

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  • JIA Bin,TONG Xiaowen,HAN Zikang,et al.Impact of Oxygen Vacancy on Performance of Amorphous InGaZnO Based Schottky Barrier Diode[J].Chinese Journal of Luminescence,2025,46(03):412-420. DOI： 10.37188/CJL.20240265. CSTR： 32170. 14. CJL. 20240265.

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