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Impact of Oxygen Vacancy on Performance of Amorphous InGaZnO Based Schottky Barrier Diode
Invited Paper | 更新时间：2025-12-31

    • Impact of Oxygen Vacancy on Performance of Amorphous InGaZnO Based Schottky Barrier Diode

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    • “In the realm of energy harvesting microsystems, a breakthrough has been made in rectifying circuit technology. Researchers have optimized diode performance by modulating the oxygen vacancy concentration within InGaZnO films, a method that offers a new direction for rectifying diode research. This approach effectively controls the device's electrical performance, laying a foundation for the construction of more efficient energy conversion and management systems.”
    • Chinese Journal of Luminescence   Vol. 46, Issue 3, Pages: 412-420(2025)

    • DOI：10.37188/CJL.20240265    

      CLC： TN311.7
    • CSTR：32170.14.CJL.20240265    

    • Received：20 October 2024，

      Revised：2024-12-09，

      Published：25 March 2025

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  • JIA Bin,TONG Xiaowen,HAN Zikang,et al.Impact of Oxygen Vacancy on Performance of Amorphous InGaZnO Based Schottky Barrier Diode[J].Chinese Journal of Luminescence,2025,46(03):412-420. DOI： 10.37188/CJL.20240265. CSTR： 32170.14.CJL.20240265.

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CJL | The influence of oxygen vacancies on the performance of amorphous IngAzno-based Schottky barri

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