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Impact of Oxygen Vacancy on the Performance of Amorphous InGaZnO based Schottky Barrier Diode
更新时间：2025-01-03
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    • Impact of Oxygen Vacancy on the Performance of Amorphous InGaZnO based Schottky Barrier Diode

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    • “In the field of energy harvesting microsystems, rectifying circuit technology has made significant progress. Expert xx optimized the performance of rectifying diodes by modulating the oxygen vacancy concentration within InGaZnO films, laying a foundation for the construction of energy conversion and management systems.”
    • Chinese Journal of Luminescence   Pages: 1-9(2025)

    • DOI：10.37188/CJL.20240265    

      CLC： Document
    • CSTR：32170. 14. CJL. 20240265    

    • Published Online：03 January 2025，

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  • JIA BIN, TONG XIAOWEN, HAN ZIKANG, et al. Impact of Oxygen Vacancy on the Performance of Amorphous InGaZnO based Schottky Barrier Diode. [J/OL]. Chinese journal of luminescence, 2025, 1-9. DOI： 10.37188/CJL.20240265. CSTR： 32170. 14. CJL. 20240265.

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