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Enhanced Near-infrared Ⅱ Emission in MgAlxGa2-xO4∶Ni2+ Phosphor via Al/Ga Ions Substitution
Synthesis and Properties of Materials | 更新时间:2024-11-28
    • Enhanced Near-infrared Ⅱ Emission in MgAlxGa2-xO4∶Ni2+ Phosphor via Al/Ga Ions Substitution

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    • In the field of imaging and detection, MgAlxGa2-xO4: Ni2+fluorescent material covers the NIR-II region, increasing the luminescence intensity by 9 times, providing a new solution for the application of near-infrared spectroscopy technology.
    • Chinese Journal of Luminescence   Vol. 45, Issue 11, Pages: 1839-1848(2024)
    • DOI:10.37188/CJL.20240194    

      CLC: O482.31
    • Published:25 November 2024

      Received:19 August 2024

      Revised:28 August 2024

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  • YANG YICHEN, LYU WEI, KANG XIAOJIAO. Enhanced Near-infrared Ⅱ Emission in MgAlxGa2-xO4∶Ni2+ Phosphor via Al/Ga Ions Substitution. [J]. Chinese journal of luminescence, 2024, 45(11): 1839-1848. DOI: 10.37188/CJL.20240194.

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Related Institution

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