Enhanced Near-infrared Ⅱ Emission in MgAlxGa2-xO4∶Ni2+ Phosphor via Al/Ga Ions Substitution
Synthesis and Properties of Materials|更新时间:2024-11-28
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Enhanced Near-infrared Ⅱ Emission in MgAlxGa2-xO4∶Ni2+ Phosphor via Al/Ga Ions Substitution
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“In the field of imaging and detection, MgAlxGa2-xO4: Ni2+fluorescent material covers the NIR-II region, increasing the luminescence intensity by 9 times, providing a new solution for the application of near-infrared spectroscopy technology.”
Chinese Journal of LuminescenceVol. 45, Issue 11, Pages: 1839-1848(2024)
the GuangDong Basic and Applied Basic Research Foundation(2022A1515140064);Dongguan Science and Technology of Social Development Program(20221800905152)
YANG YICHEN, LYU WEI, KANG XIAOJIAO. Enhanced Near-infrared Ⅱ Emission in MgAlxGa2-xO4∶Ni2+ Phosphor via Al/Ga Ions Substitution. [J]. Chinese journal of luminescence, 2024, 45(11): 1839-1848.
DOI:
YANG YICHEN, LYU WEI, KANG XIAOJIAO. Enhanced Near-infrared Ⅱ Emission in MgAlxGa2-xO4∶Ni2+ Phosphor via Al/Ga Ions Substitution. [J]. Chinese journal of luminescence, 2024, 45(11): 1839-1848. DOI: 10.37188/CJL.20240194.
Enhanced Near-infrared Ⅱ Emission in MgAlxGa2-xO4∶Ni2+ Phosphor via Al/Ga Ions Substitution增强出版
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Related Institution
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