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Enhanced Near-infrared Ⅱ Emission in MgAlxGa2-xO4∶Ni2+ Phosphor via Al/Ga Ions Substitution
Synthesis and Properties of Materials | 更新时间：2024-11-28

    • Enhanced Near-infrared Ⅱ Emission in MgAlxGa2-xO4∶Ni2+ Phosphor via Al/Ga Ions Substitution

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    • “In the field of imaging and detection, MgAlxGa2-xO4: Ni2+fluorescent material covers the NIR-II region, increasing the luminescence intensity by 9 times, providing a new solution for the application of near-infrared spectroscopy technology.”
    • Chinese Journal of Luminescence   Vol. 45, Issue 11, Pages: 1839-1848(2024)

    • DOI：10.37188/CJL.20240194    

      CLC： O482.31

    • Received：19 August 2024，

      Revised：2024-08-28，

      Published：25 November 2024

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  • YANG Yichen,LYU Wei,KANG Xiaojiao.Enhanced Near-infrared Ⅱ Emission in MgAlxGa2-xO4∶Ni2+ Phosphor via Al/Ga Ions Substitution[J].Chinese Journal of Luminescence,2024,45(11):1839-1848. DOI： 10.37188/CJL.20240194.

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Yang Yi-chen
Wei Lü
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Related Institution

School of Electrical Engineering and Intelligentization， Dongguan University of Technology
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School of Materials Science and Chemical Engineering， Ningbo University
Laboratoryof Optoelectronic Materials and Devices， Ningbo Institute of Materials Technology and Engineering， Chinese Academy of Sciences
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