您当前的位置:
首页 >
文章列表页 >
Research and Fabrication of 1.55 μm High Power Single Transverse Mode Laser
Device Fabrication and Physics | 更新时间:2024-08-06
    • Research and Fabrication of 1.55 μm High Power Single Transverse Mode Laser

      增强出版
    • In the field of optoelectronic integration applications, researchers have successfully developed low-power and high-power semiconductor lasers by optimizing the laser epitaxial P-InP doping and adopting a tapered waveguide structure, providing a solution for improving the system's working distance and signal-to-noise ratio at the receiving end.
    • Chinese Journal of Luminescence   Vol. 45, Issue 7, Pages: 1189-1195(2024)
    • DOI:10.37188/CJL.20240088    

      CLC: O472
    • Received:29 March 2024

      Revised:16 April 2024

      Published:25 July 2024

    移动端阅览

  • XUE Zhengqun,CHI Bingkun,CHEN Yuping.Research and Fabrication of 1.55 μm High Power Single Transverse Mode Laser[J].Chinese Journal of Luminescence,2024,45(07):1189-1195. DOI: 10.37188/CJL.20240088.

  •  
  •  

0

Views

461

下载量

0

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

p-type MgZnOS Transparent Conductive Films and p-n Junction Type Self-driven Ultraviolet Photodetectors
Research Progress of p-type Doping of β-Ga2O3
Preparation and Performance of 1.5 μm High-power Superluminescent Diodes
Measurement of The Electron Mobility of Tris(8-quinolinolato) Aluminum Driven by Square Waves

Related Author

HE Yunbin
GUO Ziman
WANG Yang
LIU Yang
ZHANG Teng
CHEN Jian
LU Yinmei
WANG Jinzhong

Related Institution

College of Intelligent Systems Science and Engineering, Hubei Minzu University
School of Materials Science & Engineering, Hubei University
School of Materials Science and Engineering, Harbin Institute of Technology
School of Physical and Information Engineering, Fuzhou University
School of Chemical Engineering, Hebei University of Technology
0