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Research and Fabrication of 1.55 μm High Power Single Transverse Mode Laser
Device Fabrication and Physics | 更新时间：2024-08-06
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    • Research and Fabrication of 1.55 μm High Power Single Transverse Mode Laser

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    • “In the field of optoelectronic integration applications, researchers have successfully developed low-power and high-power semiconductor lasers by optimizing the laser epitaxial P-InP doping and adopting a tapered waveguide structure, providing a solution for improving the system's working distance and signal-to-noise ratio at the receiving end.”
    • Chinese Journal of Luminescence   Vol. 45, Issue 7, Pages: 1189-1195(2024)

    • DOI：10.37188/CJL.20240088    

      CLC： O472

    • Received：29 March 2024，

      Revised：16 April 2024，

      Published：25 July 2024

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  • XUE Zhengqun,CHI Bingkun,CHEN Yuping.Research and Fabrication of 1.55 μm High Power Single Transverse Mode Laser[J].Chinese Journal of Luminescence,2024,45(07):1189-1195. DOI： 10.37188/CJL.20240088.

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