“In the field of deep ultraviolet light-emitting diodes (DUV-LEDs), researchers have made significant progress by investigating the use of separated multiple quantum barrier electron blocking layers (EBL). This innovation has been confirmed to increase hole concentration and radiative recombination rate, significantly enhancing device performance by improving hole injection efficiency and suppressing electron leakage.”
“Researchers have developed a high-performance self-driven ultraviolet photodetector using a NiO/BaTiO3/ITO p-i-n heterojunction structure, achieving a responsivity of 3.4×10^-5 A·W^-1 and a fast response speed of 0.3 s/0.4 s, offering a new strategy for improving the performance of photodetectors.”