“Researchers have made significant progress in improving the performance of AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) with wavelengths shorter than 250 nm. By introducing a separated multiple quantum barrier electron blocking layer (EBL), they have achieved a higher hole concentration and radiative recombination rate compared to conventional block EBL configurations. The separation interlayer in the EBL forms a hole acceleration zone, significantly increasing hole injection efficiency. Additionally, the multi-quantum barrier sample suppresses electron leakage by raising the electron barrier, leading to a substantial enhancement in device performance.”