基于InP/ZnS核壳结构量子点的色转换层设计及制作

王家先; 陶金; 吕金光; 李阳; 赵永周; 李盼园; 秦余欣; 张宇; 郝振东; 王维彪; 梁静秋

doi:10.3788/fgxb20204105.0592

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基于InP/ZnS核壳结构量子点的色转换层设计及制作

器件制备及器件物理 | 更新时间：2020-09-21

- 基于InP/ZnS核壳结构量子点的色转换层设计及制作
- Design and Fabrication of Color Conversion Layer Based on InP/ZnS Core-shell Quantum Dots
- 发光学报 2020年41卷第5期页码：592-602
- 作者机构：
  
  1.中国科学院长春光学精密机械与物理研究所应用光学国家重点实验室, 吉林长春 130033
  2.中国科学院大学, 北京 100049
  3.吉林大学电子科学与工程学院, 集成光电子学国家重点联合实验室, 吉林长春 130012
- 作者简介：
  
  [ "王家先(1994-), 男, 江苏连云港人, 硕士研究生, 2017年于吉林大学获得学士学位, 主要从事Micro-LED显示器件设计及应用方面的研究。E-mail:wangjx19940125@163.com" ]
  [ "王维彪(1962-), 男, 江苏扬州人, 博士, 研究员, 博士研究生导师, 1999年于中国科学院长春物理研究所获得博士学位, 主要从事微纳光学材料与器件方面的研究。E-mail:wangwb@ciomp.ac.cn" ]
  [ "梁静秋(1962-), 女, 辽宁沈阳人, 博士, 研究员, 博士研究生导师, 2003年于中国科学院长春光学精密机械与物理研究所获得博士学位, 主要从事微小型光学系统、微光机电系统(MOEMS)及微结构光学方面的研究。E-mail:liangjq@ciomp.ac.cn" ]
- 基金信息：
  
  国家重点研发项目(2018YFB1801900);广东省科技计划(2016B010111003);吉林省科技发展计划(20180201024GX);吉林省科技发展计划(20190302062GX);应用光学国家重点实验室(SKLAO：201908);中国科学院青年创新促进会基金(2018254)
- DOI：10.3788/fgxb20204105.0592
  中图分类号： TP394.1;TH691.9
- 收稿日期：2020-03-04，
  
  录用日期：2020-3-23，
  
  纸质出版日期：2020-05
- 稿件说明：
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王家先, 陶金, 吕金光, 等. 基于InP/ZnS核壳结构量子点的色转换层设计及制作[J]. 发光学报, 2020,41(5):592-602.

Jia-xian WANG, Jin TAO, Jin-guang LYU, et al. Design and Fabrication of Color Conversion Layer Based on InP/ZnS Core-shell Quantum Dots[J]. Chinese journal of luminescence, 2020, 41(5): 592-602.
王家先, 陶金, 吕金光, 等. 基于InP/ZnS核壳结构量子点的色转换层设计及制作[J]. 发光学报, 2020,41(5):592-602. DOI： 10.3788/fgxb20204105.0592.

Jia-xian WANG, Jin TAO, Jin-guang LYU, et al. Design and Fabrication of Color Conversion Layer Based on InP/ZnS Core-shell Quantum Dots[J]. Chinese journal of luminescence, 2020, 41(5): 592-602. DOI： 10.3788/fgxb20204105.0592.

摘要

提出了采用环境友好型InP/ZnS核壳结构量子点材料制备匹配蓝光Micro-LED阵列的量子点色转换层以实现Micro-LED阵列器件全彩化的技术方案。通过采用倒置式量子点色转换层方案，实现了InP/ZnS量子点材料和Micro-LED阵列的非直接接触，从而可以缓解LED中热量聚集导致的量子点材料发光主波长偏移、半峰宽展宽以及发光效率衰减等问题。量子点色转换层中内嵌PDMS聚合物柔性膜层，可以消除咖啡环效应，同时，色转换层中内嵌飞秒激光图案化处理的500 nm长波通滤光膜层，可以抑制蓝光从非蓝色像素单元出射。最后，实验制备了像素单元中心间距90 μm的16×16 InP/ZnS量子点色转换层。该设计可以实现基于蓝光Micro-LED阵列的全彩色Micro-LED显示器件的制备，并且该制备方法可以降低全彩色Micro-LED阵列显示器件的制备成本。

Abstract

In this paper

we propose a technical route to prepare full-color display device based on blue Micro-LED array and environmental friendly InP/ZnS quantum dots. We design the new structure of full-color Micro-LED display device. We design and prepare InP/ZnS quantum dots color conversion layer which matches the blue Micro-LED array. In our new structure of full-color Micro-LED device

InP/ZnS quantum dots color conversion layer is inverted and has no direct touch with the blue Micro-LED array which can relieve the adverse effect on the PL characteristic of InP/ZnS quantum dots material. In order to prepare quantum dots layer with uniform film and uniform luminescence

flexible PDMS polymer layer is embedded into the substrate of the color conversion layer to eliminate coffee-ring effect. At the same time

the patterned 500 nm longwave filter film embedded into the substrate of the color conversion layer can suppress blue light emission which can improve the color purity of the InP/ZnS quantum dot pixel luminescence unit. Finally

a 16×16 InP/ZnS quantum dots color conversion layer with a pixel pitch of 90 μm was prepared experimentally. Based on the design and preparation method

the full-color Micro-LED device can be prepared with lower cost and higher efficiency.

关键词

Keywords

references

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