晶格小失配InGaAsP材料特性及太阳电池应用

陆宏波; 李戈; 李欣益; 张玮; 胡淑红; 戴宁

doi:10.3788/fgxb20204104.0351

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晶格小失配InGaAsP材料特性及太阳电池应用

材料合成及性能 | 更新时间：2020-08-12

- 晶格小失配InGaAsP材料特性及太阳电池应用
- Small Lattice-mismatched InGaAsP: Material Characterization and Application in Solar Cells
- 发光学报 2020年41卷第4期页码：351-356
- 作者机构：
  
  1. 中国科学院大学北京,100049
  2. 中国科学院上海技术物理研究所上海,200048
  3. 上海空间电源研究所上海,200245
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61474076，61704106）();中国科协青年托举计划（2017QNRC001）();上海市青年科技启明星计划（18QB1402500，19Q
- DOI：10.3788/fgxb20204104.0351
  中图分类号： O436
- 纸质出版日期：2020-04-05，
  
  网络出版日期：2020-03-02，
  
  收稿日期：2020-02-01，
  
  修回日期：2020-02-20，
- 稿件说明：
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陆宏波, 李戈, 李欣益, 等. 晶格小失配InGaAsP材料特性及太阳电池应用[J]. 发光学报, 2020,41(4):351-356.

LU HONG-BO, LI GE, LI XIN-YI, et al. Small Lattice-mismatched InGaAsP: Material Characterization and Application in Solar Cells. [J]. Chinese journal of luminescence, 2020, 41(4): 351-356.
陆宏波, 李戈, 李欣益, 等. 晶格小失配InGaAsP材料特性及太阳电池应用[J]. 发光学报, 2020,41(4):351-356. DOI： 10.3788/fgxb20204104.0351.

LU HONG-BO, LI GE, LI XIN-YI, et al. Small Lattice-mismatched InGaAsP: Material Characterization and Application in Solar Cells. [J]. Chinese journal of luminescence, 2020, 41(4): 351-356. DOI： 10.3788/fgxb20204104.0351.

摘要

Ⅲ-Ⅴ族太阳电池效率的持续提升要求对能量转换材料的带隙宽度进行更细致划分，以实现对全光谱的高效利用。在短波红外波段，四元InGaAsP混晶材料因在带隙宽度和晶格常数的调节上具有很好的可操作性，是一种极具潜力的短波红外光电转换材料。本文对InGaAsP材料生长及子电池器件制备进行了研究，通过时间分辨荧光光谱、高分辨X射线衍射等表征手段对室温下晶格失配的InGaAsP材料进行了测试分析。实验结果表明，在一定程度负失配生长条件下，InGaAsP材料质量随着负失配程度逐渐提高。在后续电池制备过程中，一定程度负失配同样有助于电池器件性能提升，制备的单结电池开路电压由晶格匹配时的633 mV提高到负失配条件下的684 mV，从而为高效多结太阳电池的应用提供了新的技术路线。

Abstract

The continuous improvement in efficiency of Ⅲ-Ⅴ solar cells requires further detailed subdivision of the bandgap of energy conversion materials

to realize more efficient utilizing of the full solar spectrum. In the short wave infrared spectrum

InGaAsP quaternary hybrid material is a potential photoelectric conversion material due to its tunableness in bandgap and lattice constant. In this paper

the growth of InGaAsP materials and the fabrication of sub-cell devices were studied. The characteristics of lattice-mismatched InGaAsP materials were tested and analyzed by HRXRD

TRPL and other characterization methods at room temperature. Under negative mismatch growth condition

the quality of InGaAsP material increases gradually with the negative mismatch degree. Applied to sub-cell fabrication

a certain degree of negative mismatch is conducive to the improvement of device performance. The open-circuit voltage of the fabricated single-junction solar cell increases from 633 mV at lattice-matching to 684 mV at negative lattice-mismatch

thus providing a novel method to improve the efficiency of Ⅲ-Ⅴ multijunction solar cell.

关键词

晶格失配InGaAsPMOCVD太阳电池

Keywords

lattice-mismatchInGaAsPMOCVDsolar cell

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