p-GaN插入层调控InGaN基黄绿双波长LED发光光谱

魏铎垒; 张建立; 刘军林; 王小兰; 吴小明; 郑畅达; 江风益

doi:10.3788/fgxb20204102.0146

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p-GaN插入层调控InGaN基黄绿双波长LED发光光谱

材料合成及性能 | 更新时间：2020-08-12

- p-GaN插入层调控InGaN基黄绿双波长LED发光光谱
- Effect of p-GaN Spacer Layer on Emission Spectrum of Yellow-green Dual Wavelength LED
- 发光学报 2020年41卷第2期页码：146-152
- 作者机构：
  
  南昌大学国家硅基LED工程技术研究中心,江西南昌,330047
- 作者简介：
- 基金信息：
  
  国家重点研发计划（2017YFB0403105，2017YFB0403100）();国家自然科学基金（51602141，11674147，61604066，116041
- DOI：10.3788/fgxb20204102.0146
  中图分类号： O484.4;TN383+.1
- 纸质出版日期：2020-2-5，
  
  网络出版日期：2019-12-20，
  
  收稿日期：2019-11-19，
  
  修回日期：2019-12-17，
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魏铎垒, 张建立, 刘军林等. p-GaN插入层调控InGaN基黄绿双波长LED发光光谱[J]. 发光学报, 2020,41(2): 146-152

WEI Duo-lei, ZHANG Jian-li, LIU Jun-lin etc. Effect of p-GaN Spacer Layer on Emission Spectrum of Yellow-green Dual Wavelength LED[J]. Chinese Journal of Luminescence, 2020,41(2): 146-152
魏铎垒, 张建立, 刘军林等. p-GaN插入层调控InGaN基黄绿双波长LED发光光谱[J]. 发光学报, 2020,41(2): 146-152 DOI： 10.3788/fgxb20204102.0146.

WEI Duo-lei, ZHANG Jian-li, LIU Jun-lin etc. Effect of p-GaN Spacer Layer on Emission Spectrum of Yellow-green Dual Wavelength LED[J]. Chinese Journal of Luminescence, 2020,41(2): 146-152 DOI： 10.3788/fgxb20204102.0146.

摘要

采用MOCVD技术在硅衬底上生长了含有7个黄光量子阱和1个绿光量子阱的混合有源区结构的InGaN基黄绿双波长LED外延材料，研究了电子阻挡层前p-GaN插入层厚度对黄绿双波长LED载流子分布及外量子效率（EQE）的影响。通过LED变温电致发光测试系统对LED光电性能进行了表征。结果表明，100 K小电流时随着电流密度的增大，三组样品的绿光峰与黄光峰相对强度的比值越来越大，且5.5 Acm

-2

的电流密度下，随着温度从300 K逐步降低至100 K，三组样品的绿光峰与黄光峰相对强度的比值也越来越大，说明其载流子都在更靠近p型层的位置发生辐射复合。三组样品的p-GaN插入层厚度为0，10，30 nm时，EQE峰值依次为29.9%、29.2%和28.2%，呈现依次减小的趋势，归因于p-GaN插入层厚度越大，p型层越远离有源区，空穴注入也越浅。电子阻挡层前p-GaN插入层可以有效减小器件EL光谱中绿光峰随着电流密度增加时峰值波长的蓝移（33 nm），实现了对低温发光光谱的调控。

Abstract

InGaN-based yellow-green dual wavelength light-emitting diodes (LEDs) with seven pairs of yellow multiple quantum wells (MQWs) and a pair of green QW were grown on patterned Si substrate by metal-organic chemical vapor deposition (MOCVD). Meanwhile the effect of p-GaN spacer layer before the electron blocking layer (EBL) on the carriers distribution and external quantum efficiency (EQE) was investigated. LED photoelectric properties were characterized by LED test system. The results support the integrated EL intensity ratio of green/yellow peak increases with increasing current density at 100 K. And the integrated EL intensity ratio of green/yellow peak increases with decreasing temperature from 300 K to 100 K at a forward current density of 5.5 Acm

-2

. These experiment phenomena indicate that the radiative recombination of carriers occurs in the QW nearest the p-layer. The peaked EQE are 29.0%

29.2% and 28.2% with the thickness of p-GaN spacer layer 0

30 nm of three samples. The peaked EQE of three samples decrease because the active region is further from the p-layer and holes are distributed nearer the p-layer with increasing thickness of p-GaN spacer layer. p-GaN spacer layer can effectively reduce the movement (33 nm) of green peak with increasing current density and the cryogenic emission spectrum can be regulated.

关键词

硅衬底黄绿双波长LEDp-GaN插入层发光光谱

Keywords

Si substrateyellow-green dual wavelength LEDsp-GaN spacer layeremission spectrum

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