具有e指数内建电场的透射式GaAs光电阴极响应特性的理论分析

蔡志鹏; 姚军财; 黄文登; 何军锋

doi:10.3788/fgxb20183905.0661

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具有e指数内建电场的透射式GaAs光电阴极响应特性的理论分析

器件制备及器件物理 | 更新时间：2020-08-12

- 具有e指数内建电场的透射式GaAs光电阴极响应特性的理论分析
- Theoretical Study of Response Characteristics of Transmission-mode GaAs Photocathodes with Exponential Inner Electric Field
- 发光学报 2018年39卷第5期页码：661-667
- 作者机构：
  
  陕西理工大学物理与信息工程学院, 陕西汉中 723001
- 作者简介：
- 基金信息：
  
  陕西省教育厅专项科研计划（16JK1132）();陕西理工大学科研基金（SLGQD14-07）();国家自然科学基金（61301237）资助项目()
- DOI：10.3788/fgxb20183905.0661
  中图分类号： O462
- 纸质出版日期：2018-5-5，
  
  网络出版日期：2018-1-12，
  
  收稿日期：2017-9-14，
  
  修回日期：2017-12-11，
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蔡志鹏, 姚军财, 黄文登等. 具有e指数内建电场的透射式GaAs光电阴极响应特性的理论分析[J]. 发光学报, 2018,39(5): 661-667

CAI Zhi-peng, YAO Jun-cai, HUANG Wen-deng etc. Theoretical Study of Response Characteristics of Transmission-mode GaAs Photocathodes with Exponential Inner Electric Field[J]. Chinese Journal of Luminescence, 2018,39(5): 661-667
蔡志鹏, 姚军财, 黄文登等. 具有e指数内建电场的透射式GaAs光电阴极响应特性的理论分析[J]. 发光学报, 2018,39(5): 661-667 DOI： 10.3788/fgxb20183905.0661.

CAI Zhi-peng, YAO Jun-cai, HUANG Wen-deng etc. Theoretical Study of Response Characteristics of Transmission-mode GaAs Photocathodes with Exponential Inner Electric Field[J]. Chinese Journal of Luminescence, 2018,39(5): 661-667 DOI： 10.3788/fgxb20183905.0661.

摘要

设计了具有e指数内建电场的透射式GaAs负电子亲和势阴极，利用数值计算方法研究了它的时间响应特性和量子效率特性。结果表明，当吸收区厚度

~0.2~1.5 m时，阴极的响应时间和量子效率均随

的增大而增大；尤其当

~1.1 m时响应时间达到10 ps，量子效率达到12.5%~20%，迄今为止，与其他GaAs光电阴极相比，在相同光谱响应条件下，该响应速度是最高的。另外，在不同

下，获得了平均时间衰减常数

的函数分布和能够获得最短响应时间的最优系数因子

分布，为新型高速响应GaAs光电阴极的时间响应和量子效率优化提供了必要的理论基础和数据支持。

Abstract

A new-type transmission-mode NEA GaAs photocathode with the exponential built-in electric field was designed. The two important features of the new-type GaAs photocathode

the time response and the quantum yield

were theoretically studied by numerical methods. The simulation results show that the response time and the quantum yield of the new-type photocathode gradually increase with the widths of absorption layer when the widths are 0.2-1.5 m. Especially

when the width is 1.1 m

the time responses are 10 ps

and the quantum yield is 12.5%-20%. So far

compare with previous GaAs photocathodes with other doping modes

this one has the shortest response time in the same condition of the spectral responses. Meanwhile

the two functions of the average decay time and optimal factor of the built-in electric field are obtained under different widths of absorption layers

the former is related to time responses

and under the latter condition the shortest response times are obtained. The above results provide the theoretical and data basis for the design to optimize new-type GaAs photocathodes with ultrafast response.

关键词

GaAs光电阴极e指数内建电场最优系数因子时间响应

Keywords

GaAs photocathodeexponential built-in electric fieldoptimal factortime response

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