负电荷层对a-IGZO TFT阈值电压的影响

丁磊; 张方辉

doi:10.3788/fgxb20153611.1320

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负电荷层对a-IGZO TFT阈值电压的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 负电荷层对a-IGZO TFT阈值电压的影响
- Effects of Negative Charge Layer on The Threshold Voltage of a-IGZO TFT
- 发光学报 2015年36卷第11期页码：1320-1324
- 作者机构：
  
  陕西科技大学理学院,陕西西安,710021
- 作者简介：
- 基金信息：
  
  国家自然科学基金(61076066)();陕西省科技统筹创新工程计划(2011KTCQ01-09)();陕西科技大学学术带头人专项(2013XSD14)资助项目()
- DOI：10.3788/fgxb20153611.1320
  中图分类号： TN304
- 纸质出版日期：2015-11-10，
  
  收稿日期：2015-8-10，
  
  修回日期：2015-9-14，
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丁磊, 张方辉,. 负电荷层对a-IGZO TFT阈值电压的影响[J]. 发光学报, 2015,36(11): 1320-1324

DING Lei, ZHANG Fang-hui,. Effects of Negative Charge Layer on The Threshold Voltage of a-IGZO TFT[J]. Chinese Journal of Luminescence, 2015,36(11): 1320-1324
丁磊, 张方辉,. 负电荷层对a-IGZO TFT阈值电压的影响[J]. 发光学报, 2015,36(11): 1320-1324 DOI： 10.3788/fgxb20153611.1320.

DING Lei, ZHANG Fang-hui,. Effects of Negative Charge Layer on The Threshold Voltage of a-IGZO TFT[J]. Chinese Journal of Luminescence, 2015,36(11): 1320-1324 DOI： 10.3788/fgxb20153611.1320.

摘要

采用脉冲直流磁控溅射的方式沉积In-Ga-Zn-O (IGZO)膜层作为TFT的有源层.在TFT沟道处的有源层和绝缘层的界面上

通过溅射法制作一定厚度的负电荷层对阈值电压(

)进行调制

使得

由-3.8 V升高至-0.3 V

器件由耗尽型向增强型转变.通过增加Al

作为负电荷层

可有效地将

控制在0 V附近

并且提高其器件稳定性

得到较好的电学特性:电流开关比

off

亚阈值摆幅

为0.2 V/dec

阈值电压

为-0.3 V

迁移率

为9.2 cm

/(Vs).

Abstract

TFT device with In-Ga-Zn-O (IGZO) film as the active layer deposited by pulse DC sputtering was fabricated. An Al

film which was also deposited by sputtering was sandwiched between the active layer and an insulating layer. The Al

acted as a negative charge layer for threshold voltage modulation (

). It raised the

from -3.8 V to -0.3 V

enhancing the formation of a depletion mode device. The application of Al

as a negative layer can effectively control

around 0 V and enhance the stability of the device. Improved device characteristics such as: on/off current ratio (

off

)

sub-threshold slope(

) of 0.2 V/dec

of -0.3 V

and mobility (

) of 9.2 cm

/(Vs) were therefore achieved.

关键词

a-IGZO薄膜晶体管磁控溅射法负电荷层平带电势阈值电压

Keywords

a-IGZO TFTMS sputteringnegative charge layerflat band potentialthreshold voltage

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