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1. 香港科技大学 物理系,香港,999077
2. 西昌卫星发射中心, 四川 西昌,615000
3. 中国科学院 深圳先进技术研究院,广东 深圳,518055
4. 中山大学理工学院 光电材料与技术国家重点实验室,广东 广州,510000
纸质出版日期:2015-11-10,
收稿日期:2015-7-7,
修回日期:2015-8-11,
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王玉超, 张权林, 苏龙兴等. ZnO单晶和BeZnO合金的生长及其紫外探测器研究[J]. 发光学报, 2015,36(11): 1233-1239
WANG Yu-chao, ZHANG Quan-lin, SU Long-xing etc. Growth of ZnO Single Crystal and BeZnO Alloy and Ultraviolet Detector[J]. Chinese Journal of Luminescence, 2015,36(11): 1233-1239
王玉超, 张权林, 苏龙兴等. ZnO单晶和BeZnO合金的生长及其紫外探测器研究[J]. 发光学报, 2015,36(11): 1233-1239 DOI: 10.3788/fgxb20153611.1233.
WANG Yu-chao, ZHANG Quan-lin, SU Long-xing etc. Growth of ZnO Single Crystal and BeZnO Alloy and Ultraviolet Detector[J]. Chinese Journal of Luminescence, 2015,36(11): 1233-1239 DOI: 10.3788/fgxb20153611.1233.
用分子束外延(MBE)的方法在c面蓝宝石衬底上生长出了高质量的ZnO单晶薄膜和Be
x
Zn
1-x
O合金薄膜.X射线光电子能谱(XPS)测试结果表明
合金材料中Be元素的摩尔分数分别为1.8%、4.9%、8.0%和15.3%.在此基础上制备了ZnO基和Be
x
Zn
1-x
O基的金属-半导体-金属(MSM)结构紫外探测器.ZnO单晶探测器的响应波长为375 nm
在1 V电压下
350 nm处的光响应度高达43 A/W
光电流和暗电流之比达到10
5
量级.在Be
x
Zn
1-x
O基紫外探测器中
其截止响应波长随着合金中Be含量的增加逐渐蓝移
其中Be
0.153
-Zn
0.847
O 合金探测器的截止响应波长为366 nm
紫外波段和可见波段的光电流之比达到2~3个数量级
具有良好的信噪比.此外
提出了氧气等离子体表面处理降低探测器暗电流的方法
并使ZnO单晶探测器的暗电流降低了4个数量级.
To develop ZnO-based deep ultraviolet (UV) detectors
high-quality ZnO and Be
x
Zn
1-x
O films were grown on c-plane of sapphire substrates using plasma-assisted molecular beam epitaxy (PAMBE). X-ray photoelectron spectroscopy (XPS) tests showed that the mole fractions of Be in Be
x
Zn
1-x
O alloys followed by 1.8%
4.9%
8.0%
15.3%
respectively. Prototypes of ZnO ultraviolet detectors with the metal-semiconductor-metal (MSM) structure were fabricated and tested
which showed a large on/off ratio and high responsivity
as well as the demonstration of blue-shift tuning of responsivity for Be
x
Zn
1-x
O-based detectors with Be doping. The cut-off response wavelength of Be
0.153
Zn
0.847
O detectors is 366 nm
moreover
the device has good signal-to-noise up to 2-3 orders of magnitude. These achievements should provide valuable insights and experiences for the ZnO-based materials and devices. Moreover
oxygen plasma surface treatment was studied to probe the influence on dark current. By appropriate surface treatment
the dark current of ZnO detector can be reduced by 4 orders of magnitude.
ZnO单晶BexZn1-xO合金紫外探测器表面处理分子束外延
ZnO single crystalBexZn1-xO alloyultraviolet detectorsurface treatmentMBE
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