In含量对InGaN/GaN LED光电性能的影响

李国斌; 陈长水; 刘颂豪

doi:10.3788/fgxb20133409.1233

您当前的位置：

首页 >

文章列表页 >

In含量对InGaN/GaN LED光电性能的影响

器件制备及器件物理 | 更新时间：2020-08-12

- In含量对InGaN/GaN LED光电性能的影响
- The Effects of In Content on The LED Photoelectric Performance InGaN/GaN
- 发光学报 2013年34卷第9期页码：1233-1239
- 作者机构：
  
  华南师范大学信息光电子科技学院广东省微纳光子功能材料与器件重点实验室,广东广州,510631
- 作者简介：
- 基金信息：
  
  国家自然科学基金(60878063)();广东省自然科学基金(10251063101000001,8251063101000006)资助项目()
- DOI：10.3788/fgxb20133409.1233
  中图分类号： O47
- 收稿日期：2013-04-29，
  
  修回日期：2013-05-30，
  
  纸质出版日期：2013-09-10
- 稿件说明：
移动端阅览
李国斌, 陈长水, 刘颂豪. In含量对InGaN/GaN LED光电性能的影响[J]. 发光学报, 2013,34(9): 1233-1239

LI Guo-bin, CHEN Chang-shui, LIU Song-hao. The Effects of In Content on The LED Photoelectric Performance InGaN/GaN[J]. Chinese Journal of Luminescence, 2013,34(9): 1233-1239
李国斌, 陈长水, 刘颂豪. In含量对InGaN/GaN LED光电性能的影响[J]. 发光学报, 2013,34(9): 1233-1239 DOI： 10.3788/fgxb20133409.1233.

LI Guo-bin, CHEN Chang-shui, LIU Song-hao. The Effects of In Content on The LED Photoelectric Performance InGaN/GaN[J]. Chinese Journal of Luminescence, 2013,34(9): 1233-1239 DOI： 10.3788/fgxb20133409.1233.

摘要

运用软件模拟和理论计算的方法分析了In含量对发光二极管光电性能的影响

研究了In含量与光谱功率密度、量子阱中载流子的浓度、辐射速率、发光功率等之间的关系。分析结果表明:电子泄漏与能带填充是影响光电性能的主要原因。当In含量较低时

随着电流密度增大(

8 kA/cm

)

光谱发生蓝移程度相对较小

但电流密度太大(

8 kA/cm

)会造成电子泄漏

发光功率降低;而当In含量较高时

随着电流密度增大

光谱发生蓝移程度相对较大

但在电流密度较大时

会获得较高的发光功率。因此

为了使InGaN/GaN发光二极管获得最大量子效率与发光效率

应该根据电流密度的大小(8 kA/cm

)来选择In含量的高低。

Abstract

The photoelectric properties of the light-emitting diodes were analyzed with various In content by software simulation and numerical calculation method. The relationship between In content and power spectral density

carrier concentration of the quantum well

radiative rates

and luminous power were investigated. The results show that the electron leakage and band filling are the main reason for impacting photovoltaic performance. When In content is lower

the spectrua blue shift is relatively small with the current density increasing(

8 kA/cm

)

but the electron leakage will happen when the current density increases to a certain value(

8 kA/cm

)

and the out power will reduce. When In content is higher

the spectrua blue shift is relatively larger with the current density increasing

however

the output power is higher. Accordingly

in order to make the InGaN/GaN light emitting diodes obtain the maximum quantum efficiency and light emitting efficiency

the In content need to be selected according to the value of the current density(8 kA/cm

关键词

Keywords

references

Li X, Okur S, Zhang F, et al. Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions [J]. Appl. Phys. Lett., 2012, 101(4):1115-1119.[2] Chen G C, Fan G H. Study on long-wavelength optical phonons in hexagonal InAlGaN crystals [J]. Chin. J. Lumin. (发光学报), 2012, 33(8):808-811 (in English).[3] Kioupakis E, Rinke P, Delaney K T, et al. Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes [J]. Appl. Phys. Lett., 2011, 98(16):161107-1-3.[4] Shen Y C, Mueller G O, Watanabe S, et al. Auger recombination in InGaN measured by photoluminescence [J]. Appl. Phys. Lett., 2007, 91(14):141101-1-3.[5] Delaney K T, Rinke P, Van de Wall C G. Auger recombination rates in nitrides from first principles [J]. Appl. Phys. Lett., 2009, 94(19):191109-1-3.[6] Joachim P, Li S. Electron leakage effects on GaN-based light-emitting diodes [J]. Opt. Quant. Elect., 2011, 42(2):89-95.[7] Pope I A, Smowton P M. Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm [J]. Appl. Phys. Lett., 2003, 82(17):2755-2757.[8] Mao A, Jaehee C. Reduction of efficiency droop in GaInN/GaN light-emitting diodes with thick AlGaN cladding layers [J]. Electron. Mater. Lett., 2012, 8(1):1-4.[9] Meyaard D S, Shan Q, Dai Q, et al. On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes [J]. Appl. Phys. Lett., 2011, 99(4):041112-1-3.[10] Bulashevich K A, Karpov S Y. Is Auger recombination responsible for the efficiency rollover in Ⅲ-nitride light-emitting diodes [J]. Phys. Status Solidi (c), 2008, 5(6):2066-2069.[11] Xie J Q, Xian F N, Qian F, et al. On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers [J]. Appl. Phys. Lett., 2008, 93(12):121107-1-3.[12] Kunzer M, Leancu C C, Maier M, et al. Well width dependent luminescence characteristics of UV-violet emitting GaInN QW LED structures [J]. Phys. Status Solidi (c), 2008, 5(6):2170-2172.[13] Reed M L, Readinger E D, Moe C G, et al. Benefits of negative polarization charge in n-InGaN on p-GaN single heterostructure light emitting diode with p-side down [J]. Phys. Status Solidi (c), 2009, 6(2):585-588.[14] Jaehee C, Euijoon Y, Wo J H, et al. Characteristics of blue and ultraviolet light-emitting diodes with current density and temperature [J]. Electron. Mater. Lett., 2010, 6(2):51-53.[15] Kim A Y, Steigerwald D A, Wierer J J, et al. Performance of high-power AlInGaN light emitting diodes [J]. Phys. Status Solidi (a), 2001, 188(1):15-21.[16] Efremov A A, Bochkareva N I, Gorbunov R I, et al. Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs [J]. Semiconductors, 2006, 40(5):605-610.[17] Nakamura S, Senoh M, Iwasa N, et al. Super bright green InGaN single quantum well structure light-emitting diodes [J]. Jpn. J. Appl. Phys. B, 1994, 34(10):L1332-L1335.[18] Zheng D Y. Characterization and analysis on optics character of semiconductor luminescence material. Yantai: Yantai University, 2005.[19] Son J H, Lee J L. Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes [J]. Opt. Exp., 2010, 18(6):5466-5469.[20] Im J S, Kollmer H, Off J, et al. Reduction of oscillator strength due to piezoelectric fields in GaN /AlGaN quantum wells [J]. Phys. Rev. B, 1997, 57(16):9435-9438.[21] Cheong M G, Liu C, Choi H W, et al. Study of the origin of luminescence in high indium composition InGaN/GaN quantum wells [J]. J. Appl. Phys., 2003, 93(8):4691-4695.[22] Chichibu S, Azuhata T, Sota T, et al. Spontaneous emission of localized exactions in InGaN single and multi quantum well structures [J]. Appl. Phys. Lett., 1996, 69(27):4187-4189.[23] Qin X L, He Z Y, He N. Efficiency characteristic analysis and driving scheme design of power LEDs [J]. Chin. J. Liq. Crys. & Disp.(液晶与显示), 2012, (3):371-377 (in Chinese).[24] Morel A, Lefebvre P, Kalliakos S, et al. Donor acceptor like behavior of electron-hole pair recombinations in low-densional GaInN/GaN systems [J]. Phys. Rev. B, 2003, 68(4):045331-1-7.[25] Humphreys C J. Does In form In-rich clusters In InGaN quantum wells [J]. Philosophical Magazine, 2007, 87(13):1971-1982.[26] Narukawa Y, Kawakami Y, Fujita S, et al. Dimensionality of exactions in laser-diode structures composed of InxGa1-xN multiple quantum wells [J]. Phys. Rev. B, 1999, 59(15):10283-10288.

浏览量

243

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

In_xGa_1-xN量子阱蓝光LED光电特性与量子阱束缚态能级的关系

高效InGaN/AlInGaN发光二极管的结构设计及其理论研究

基于混合型量子阱的GaN基垂直结构发光二极管性能

新型电子阻挡层结构对蓝光InGaN发光二极管性能的提高

量子阱数量变化对InGaN/AlGaN LED的影响