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1. 中国科学院长春应用化学研究所高分子物理与化学国家重点实验室,吉林 长春,130022
2. 长春师范学院 物理学院,吉林 长春,130032
3. 中国科学院长春应用化学研究所 高分子复合材料工程实验室,吉林 长春,130022
4. 发光学与应用国家重点实验室 中国科学院长春光学精密机械与物理研究所,吉林 长春,130033
纸质出版日期:2012-11-10,
收稿日期:2012-7-29,
修回日期:2012-9-24,
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田苗苗, 李春杰, 贺小光, 于立军, 范翊, 王宁. 以ILTO为阳极的高效有机电致发光器件[J]. 发光学报, 2012,(11): 1252-1257
TIAN Miao-miao, LI Chun-jie, HE Xiao-guang, YU Li-jun, FAN Yi, WANG Ning. High-performance Organic Light-emitting Diodes Based on ILTO Thin Film[J]. Chinese Journal of Luminescence, 2012,(11): 1252-1257
田苗苗, 李春杰, 贺小光, 于立军, 范翊, 王宁. 以ILTO为阳极的高效有机电致发光器件[J]. 发光学报, 2012,(11): 1252-1257 DOI: 10.3788/fgxb20123311.1252.
TIAN Miao-miao, LI Chun-jie, HE Xiao-guang, YU Li-jun, FAN Yi, WANG Ning. High-performance Organic Light-emitting Diodes Based on ILTO Thin Film[J]. Chinese Journal of Luminescence, 2012,(11): 1252-1257 DOI: 10.3788/fgxb20123311.1252.
以高功函数的掺杂钛酸镧的氧化铟薄膜(ILTO)及氧化铟锡(ITO)作为阳极
制备了Glass/anode/NPB/Alq
3
/LiF/Al结构的有机电致发光器件。得益于ILTO较好的掺杂性、低的表面粗糙度、高的可见光透过率以及高的有效功函数
以ILTO为阳极的有机电致发光器件的开路电压得到降低
最高亮度、电流效率、功率效率以及外量子效率均获得了成倍的提高。研究结果表明
ILTO是一种潜在的光学窗口材料
有望在各种光电器件中得到广泛的应用。
OLEDs were fabricated with a structure of anode (ILTO or ITO)/NPB (70 nm)/Alq
3
(60 nm)/LiF (1 nm)/Al (100 nm). NPB and tris(8-hydroxyquinoline) aluminum (Alq
3
) were used as hole transport layer and light emitting layer
respectively. A buffer layer of lithium fluoride (LiF) capped with aluminum (Al) was used as a cathode. Comparing with ITO-anode device
the luminance
current efficiency
power efficiency
and external quantum efficiency (EQE) are obviously enhanced in ILTO-anode device. Simultaneously
the turn-on voltage (2.1 V) is decreased in combination with a better rectifying behavior. The significant improvement in the EL performance indicates that the high-work-function ILTO anode can not only lower the hole-injection barrier
but also leads to a better charge balance in OLEDs. The effects of high work function afford more opportunities to develop and optimize the performance of organic photoelectric devices
and facilitate the fabrication process of devices.
功函数掺杂透明导电薄膜有机电致发光器件
work functiondopedtransparent conducting oxidesOLED
Vossen J L. Transparent conducting films [J]. Physics of Thin Films, 1977, 9(7):1-5.
Minami T. New n-type transparent conducting oxides [J]. MRS Bulletin,2000, 25(18):38-44.
Burstein E. Anomalous optical absorption limit in InSb [J]. Phys. Rev., 1954, 93(11):632-633.
Moss T S. The interpretation of the properties of indium antimonide [J]. Proc. Phys. Soc. Lond. Soc.B, 1954, 67(22):775-780.
Tang C W, VanSlyke S A. Organic electroluminescent diodes [J]. Appl. Phys. Lett., 1987, 51(31):913-915.
Coutts T J, Young D L, Li X N. Characterization of transparent conducting oxides [J]. MRS Bull., 2000, 25(18):58-65.
Edwards P P, Porch A, Jones M O, et al. Basic materials physics of transparent conducting oxides [J]. Dalton Trans.,2004, 41(21):2995-4002.
Tang C W. Two-layer organic photovoltaic cell [J]. Appl. Phys. Lett., 1986, 48(30):183-185.
Wang R X, Djurisic A B, Beling C D, et al. Properties of ITO thin films deposited on amorphous and crystalline substrates with e-beam evaporation [J]. Semicond. Sci. Technol., 2004, 19(6):695-698.
Ginsley D S, Bright C. Transparent conducting oxides [J]. MRS Bull., 2000, 25(8):15-18.
Minami T. Transparent conducting oxide semiconductors for transparent electrodes [J]. Semicond. Sci. Technol., 2005, 20(4):35-39.
Koch N, Duhm S, Rabe J P, et al. Tuning the hole injection barrier height at organic/metal interfaces with sub-monolayers of electron acceptor molecules [J]. Appl. Phys. Lett., 2005, 87(10):101905-1-3.
Brown T M, Kim J S, Friend R H, et al. Built-in field electroabsorption spectroscopy of polymer light-emitting diodes incorporating a doped poly(3,4-ethylene dioxythiophene) hole injection layer [J]. Appl. Phys. Lett., 1999, 75(12):1679-1682.
Adamovich V I, Cordero S R, Djurovich P I, et al. New charge-carrier blocking materials for high efficiency OLEDs [J]. Org. Electron., 2003, 4(21):77-87.
Koch N, Duhm S, Rabe J P. Optimized hole injection with strong electron acceptors at organic-metal interfaces [J]. Phys. Rev. Lett., 2005, 95(82):237601-237604.
Tian M, Fan Y, Liu X. Fabrication and characteristics of transparent conducting bismuth-doped thin indium oxide film[J]. Chin. J. Lumin.(发光学报), 2010, 31(4):605-608 (in Chinese).
Tian M, Liu X. High efficiency tandem organic light-emitting diode based on a new charge connecting layer[J]. Chin. J. Lumin.(发光学报),2010, 31(5):651-654 (in Chinese).
Tian M, Fan Y, Gao J, et al. Electroplex in organic light-emitting diodes [J]. Chin. J. Lumin. (发光学报),2010, 31(6):779-783.
Milliron D J, Hill I G, Shen C, et al. Surface oxidation activates indium tin oxide for hole injection [J]. J. Appl. Phys., 2000, 87(21):572-576.
Sugiyama K, Ishii H, Ouchi Y, et al. Dependence of indium-tin-oxide work function on surface cleaning method as studied by ultraviolet and X-ray photoemission spectroscopies [J]. J. Appl. Phys., 2000, 87(27):295-302.
Nüesch F, Rothberg L J, Forsythe E W, et al. A photoelectron spectroscopy study on the indium tin oxide treatment by acids and bases [J]. Appl. Phys. Lett., 1999, 74(18):880-882.
Khodabakhsh S, Poplavsky D, Heutz S, et al. Using self-assembling dipole molecules to improve hole injection in conjugated polymers [J]. Adv. Funct. Mater., 2004, 14(19):1205-1210.
He X, Tian M, Xuan X, et al. Efffects of inserted LiF thin film between EML and ETL on OLEDs performance [J]. Chin. J. Lumin. (发光学报), 2012, 33(2):192-196 (in Chinese).
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