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1. 发光学及应用国家重点实验室 中国科学院长春光学精密机械与物理研究所,吉林 长春,130033
2. 中国科学院 研究生院 北京,100039
纸质出版日期:2012-6-10,
网络出版日期:2012-6-10,
收稿日期:2012-3-23,
修回日期:2012-4-6,
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郝明明, 朱洪波, 秦莉, 宁永强, 刘云, 张志军, 王立军. 百瓦级高亮度光纤耦合半导体激光模块的研制[J]. 发光学报, 2012,(6): 651-659
HAO Ming-Ming, ZHU Hong-Bo, QIN Li, NING Yong-Qiang, LIU Yun, ZHANG Zhi-Jun, WANG Li-Jun. Reaearch on High Brightness Fiber Coupled Diode Laser Module with Hundred Watts Class Output Power[J]. Chinese Journal of Luminescence, 2012,(6): 651-659
郝明明, 朱洪波, 秦莉, 宁永强, 刘云, 张志军, 王立军. 百瓦级高亮度光纤耦合半导体激光模块的研制[J]. 发光学报, 2012,(6): 651-659 DOI: 10.3788/fgxb20123306.0651.
HAO Ming-Ming, ZHU Hong-Bo, QIN Li, NING Yong-Qiang, LIU Yun, ZHANG Zhi-Jun, WANG Li-Jun. Reaearch on High Brightness Fiber Coupled Diode Laser Module with Hundred Watts Class Output Power[J]. Chinese Journal of Luminescence, 2012,(6): 651-659 DOI: 10.3788/fgxb20123306.0651.
用3只976 nm半导体激光短列阵作为子模块
研制出连续工作的百瓦级高亮度光纤耦合模块。首先
利用光束转换器将每个半导体激光短列阵进行光束整形;然后采用空间复用技术将3个半导体激光短列阵在光参数积小的方向上叠加
并利用倒置伽利略望远镜作为扩束器进一步压缩发散角;最后利用优化结构的透镜组将激光聚焦到芯径200 m
数值孔径为0.22的光纤中。测量结果显示:聚焦后激光的发散角为24.8
焦平面的光斑尺寸为175.2 m;耦合后测量光纤出光功率可达107 W
对应亮度为2.23 MW/(cm
2
sr)
达到了国内利用列阵进行光纤耦合的领先水平;在工作电流为52.5 A时
电光转换效率为43.1%
远高于全固态等激光器;最后测量本模块在不同驱动电流时的光谱
并以此计算出模块的热阻为1.29 K/W
说明它的散热性能良好。结果表明
本光纤耦合模块适合应用于泵浦光纤激光器、医疗和激光加工等领域。
Three 976 nm diode laser short bars were used as submodule to manufacture high brightness fiber coupled module with CW hundred watts class output power. First
beam transform systems were employed to shape beams emitted from each submodlue; Second
the three beams were stacked in direction of lower beam parameter product by means of spatial multiplexing technology; Finally
the laser was focused into a multimode fiber with 200 m core diameter and
NA
=0.22 by optimized lens. Experiment result showed that divergence angle of the focused laser beam was 24.8 and its beam waist diameter was 175.2 m; laser output from fiber could reach to 107 W
equalizing brightness of 2.23 MW/(cm
2
sr)
which is a higher level in China. Furthermore
the wall plug efficiency is 43.1% when driving current is 52.5 A
which is far higher than that of solid state laser. Finally the thermal resistance was computed by means of measuring spectrum with different current and the result is 1.29 K/W which indicates favorable heat dissipation of the module. All of the result showed that the module can be used in the field of pumping fiber lasers
medical
material processing and so on.
半导体激光短列阵光纤耦合高亮度光线追迹
diode laser short barsfiber couplinghigh brightnessray tracing
Ding Xiaochen, Zhang Pu, Xiong Lingling, et al. Thermal reaction of high power semiconductor laser with voids in solder layer [J]. Chinese Journal of Lasers (中国激光), 2011, 38(9):0902006-1-6 (in Chinese).[2] Dai Zhiyong, Zhang Xiaoxia, Peng Zengshou, et al. High power single-frequency narrow linewidth fiber laser with nonlinear two-wave mixing [J]. Chin. J. Lumin.(发光学报), 2011, 32(2):159-163 (in Chinese).[3] Li Zaijin, Hu Liming, Wang Ye, et al. Facet coating for 808 nm Al-containing semiconductor laser diodes [J]. Opt. Precision Eng.(光学 精密工程), 2010, 18(6):1258-1263 (in Chinese).[4] Peng Hangyu, Liu Yun, Shan Xiaonan, et al. 2 600 W high efficiency laser diode source with polarization coupling [J]. Chin. J. Lumin.(发光学报), 2011, 32(10):1036-1040 (in Chinese).[5] Niu Gang, Fan Zhongwei, Wang Peifeng, et al. A single fiber coupling module with the output power of 50 W [J]. Journal of Optoelectronics · Laser (光电子·激光), 2008, 19(4):427-429 (in Chinese).[6] Zhu Hongbo, Liu Yun, Hao Mingming, et al. High efficiency module of fiber coupled diode laser [J]. Chin. J. Lumin.(发光学报), 2011, 32(11):1147-1151 (in Chinese).[7] Huang R K, Chann B, Burgess J, et al. Direct diode lasers with comparable beam quality to fiber, CO2, and solid state lasers [J]. SPIE, 2012, 8241:8241021-1-6.[8] Liu Youqiang, Cao Yinhua, Gao Jing, et al. The research of fiber-coupled high power diode laser [J]. SPIE, 2011, 8192:81922X-1-10.[9] Gao Xin, Bo Baoxue, Qiao Zhongliang, et al. Single fiber coupling of multi-linear-array-diode-lasers [J]. Acta Photonica Sinica (光子学报), 2010, 39(7):1229-1234 (in Chinese).[10] Wang Xiangpeng, Liang Xuemei, Li Zaijin, et al. 880 nm semiconductor laser diode arrays and fiber coupling module [J]. Opt. Precision Eng.(光学 精密工程), 2010, 18(5):1021-1027 (in Chinese).[11] Bachmann F, Loosen P, Poprawe R. High Power Diode Lasers and Their Applications [M]. New York:Springer Series in Optical Sciences, 2007:121.[12] Yang Ye, Liu Yun, Qin Li, et al. Near diffraction limit high-brightness taper 850 nm laser diodes [J]. Chin. J. Lumin.(发光学报), 2011, 32(10):1064-1068 (in Chinese).[13] Ruebenach O, Hambuecker S, Sinhoff V R. Micro parts for macro power:Efficient beam shaping optics for high-power diode lasers [J]. SPIE, 2005, 5711:177-184.[14] Hodges A, Wang J, de Franza M, et al. A CTE matched, hard solder, passively cooled laser diode package combined with nXLTTM facet passivation enables high power, high reliability operation [J]. SPIE, 2007, 6552:65521E-1-9.[15] Yang Shiming, Tao Wenquan. Heat Transfer Theory [M]. Beijing:Higher Education Press, 2006:42-45 (in Chinese).[16] Feeler R, Coleman S, Levy J, et al. Elimination of deionized cooling water requirement for microchannel-cooled laser diode arrays [J]. SPIE, 2007, 6456:645617-1-8.[17] Leers M, Boucke K. Cooling approaches for high power diode laser bars //Electronic Components and Technology Conference, Florida, USA:IEEE, 2008:1011-1016.
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