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中山大学 光电材料与技术国家重点实验室,广东 广州,510275
纸质出版日期:2012-6-10,
网络出版日期:2012-6-10,
收稿日期:2012-3-18,
修回日期:2012-4-19,
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丁罕, 李泽龙, 丘志仁, 江绍基. CdS/CdTe多晶薄膜的时间光谱特性[J]. 发光学报, 2012,(6): 576-580
DING Han, LI Ze-long, QIU Zhi-ren, JIANG Shao-ji. Time-resolved Photoluminescence Studies of Polycrystalline CdS/CdTe[J]. Chinese Journal of Luminescence, 2012,(6): 576-580
丁罕, 李泽龙, 丘志仁, 江绍基. CdS/CdTe多晶薄膜的时间光谱特性[J]. 发光学报, 2012,(6): 576-580 DOI: 10.3788/fgxb20123306.0576.
DING Han, LI Ze-long, QIU Zhi-ren, JIANG Shao-ji. Time-resolved Photoluminescence Studies of Polycrystalline CdS/CdTe[J]. Chinese Journal of Luminescence, 2012,(6): 576-580 DOI: 10.3788/fgxb20123306.0576.
采用超短皮秒脉冲激光激发制备了SnO
2
:F 玻璃衬底和石英衬底的CdTe多晶薄膜
在室温下测量其稳态和瞬态荧光光谱。结果表明
随着激发功率的增大
其荧光光谱峰逐渐展宽
并发生蓝移。对于退火处理的样品
其荧光光谱伴随主峰旁出现一个肩峰
是Cl 原子与富Cd区存在的空位形成复合体引起的发射。其瞬态荧光光谱寿命呈双指数衰减
即表面效应所引起的慢过程和带边激子态发射的快过程组成。样品退火处理后荧光寿命变长
有利于电子-空穴对在复合发光前分离
提高电子空穴的迁移率
改善其光伏性能。
In this work
the steady-state photoluminescence (PL) and time-resolved photoluminescence(TRPL) of polycrystalline CdTe on different substrates were measured at room temperature by a Nd:YAG picosecond laser as the excitation source. With the increasing of pump power
the PL spectra have been broadened towards high photon energy. The PL spectra of the annealed sample exhibit another small band
which is attributed to the donor-acceptor pair recombination by a chlorine donor and a cadmium vacancy complex acceptor. The PL decay curve presents bi-exponential processes. The processes with long and short lifetimes are related to surface trapping state and band-edge excitonic state
respectively. Annealing treatment makes the fluorescence lifetime longer and benefits for the separation of the electron-hole pair before being composited.
CdTe退火光致发光荧光寿命
CdTeannealingphotoluminescencefluorescence lifetime
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Javier A, Magana D, Jennings T, et al. Nanosecond exciton recombination dynamics in colloidal CdSe quantum dots under ambient conditions [J]. Appl. Phys. Lett., 2003, 83(7):1423-1425.
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