GaN基MIS紫外探测器的电学及光电特性

尤坤; 宋航; 黎大兵; 刘洪波; 李志明; 陈一仁; 蒋红; 孙晓娟; 缪国庆

doi:10.3788/fgxb20123301.0055

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GaN基MIS紫外探测器的电学及光电特性

器件制备及器件物理 | 更新时间：2020-08-12

- GaN基MIS紫外探测器的电学及光电特性
- Electrical and Optoelectronics Characteristics of GaN Based MIS Photo-detectors
- 发光学报 2012年33卷第1期页码：55-61
- 作者机构：
  
  1. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所, 吉林长春 130033
  2. 中国科学院研究生院, 北京 100039
- 作者简介：
- 基金信息：
  
  国家自然科学基金(51072196,51072195)资助项目()
- DOI：10.3788/fgxb20123301.0055
  中图分类号： O472.3
- 收稿日期：2011-08-29，
  
  修回日期：2011-10-04，
  
  网络出版日期：2012-01-10，
  
  纸质出版日期：2012-01-10
- 稿件说明：
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尤坤, 宋航, 黎大兵, 刘洪波, 李志明, 陈一仁, 蒋红, 孙晓娟, 缪国庆. GaN基MIS紫外探测器的电学及光电特性[J]. 发光学报, 2012,33(1): 55-61

YOU Kun, SONG Hang, LI Da-bing, LIU Hong-bo, LI Zhi-ming, CHEN Yi-ren, JIANG Hong, SUN Xiao-juan, MIAO Guo-qing. Electrical and Optoelectronics Characteristics of GaN Based MIS Photo-detectors[J]. 发光学报, 2012,33(1): 55-61
尤坤, 宋航, 黎大兵, 刘洪波, 李志明, 陈一仁, 蒋红, 孙晓娟, 缪国庆. GaN基MIS紫外探测器的电学及光电特性[J]. 发光学报, 2012,33(1): 55-61 DOI： 10.3788/fgxb20123301.0055.

YOU Kun, SONG Hang, LI Da-bing, LIU Hong-bo, LI Zhi-ming, CHEN Yi-ren, JIANG Hong, SUN Xiao-juan, MIAO Guo-qing. Electrical and Optoelectronics Characteristics of GaN Based MIS Photo-detectors[J]. 发光学报, 2012,33(1): 55-61 DOI： 10.3788/fgxb20123301.0055.

摘要

制备了GaN基金属-绝缘层-半导体(MIS)结构紫外探测器

并测量了其暗电流和光谱响应。通过分析其暗电流

发现在反偏情况下

其主要电流输运机制为隧穿复合机制;在正偏情况下

随着偏压的增大

电流输运机制从隧穿机制变为空间电荷限制电流机制。光谱响应测试结果显示

该探测器在-5 V的偏压下

在315 nm处获得了最大响应度170 mA/W

探测度为2.310

cmHz

1/2

-1

。此外

还研究了不同厚度I层对器件光电压的影响

结果表明

光电压受隧穿机制与漏电流机制的共同制约。

Abstract

The GaN based metal-insulator-semiconductor (MIS) ultraviolet (UV) photodetectors were fabricated. The dark

I-V

curves and responsivity spectrum of the photodetectors were mea-sured

and the current transport mechanisms were analyzed. By analyzing the current transport mechanics

it was found that the tunneling-recombination mechanism dominated at the reverse bias and with the forward bias increasing

the current transport mechanism changed from tunneling mechanism to space charge limited current (SCLC) mechanism. Under 5 V reverse bias

it was found that the best responsivity and detectivity of the GaN based MIS detector were 170 mA/W and 2.310

cmHz

1/2

-1

at 315 nm. The photo-voltages of GaN based UV photodetectors of different depth of insulator layers were studied

and it was found that the photo-voltage was limited by the tunneling procedure and leakage current.

关键词

Keywords

references

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