高功率半导体激光阵列的高温特性机理

李波; 王贞福; 仇伯仓; 杨国文; 李特; 赵宇亮; 刘育衔; 王刚; 白少博; 杜宇琦

doi:10.37188/fgxb20204109.1158

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高功率半导体激光阵列的高温特性机理

器件制备及器件物理 | 更新时间：2020-09-10

- 高功率半导体激光阵列的高温特性机理
- Analysis on High Temperature Characteristic of High Power Semiconductor Laser Array
- 发光学报 2020年41卷第9期页码：1158-1164
- 作者机构：
  
  1.中国科学院西安光学精密机械研究所瞬态光学与光子技术国家重点实验室, 陕西西安 710119
  2.中国科学院大学, 北京 100049
- 作者简介：
  
  [ "李波(1994-), 男, 山西朔州人, 硕士研究生, 2017年于太原理工大学获得学士学位, 主要从事高功率半导体激光器机理分析方面的研究。E-mail:libo2017@opt.cn" ]
  [ "王贞福(1982-), 男, 山东高密人, 博士, 副研究员, 2011年于中国科学院长春光学精密机械与物理研究所获得博士学位, 主要从事高功率、高效率半导体激光器方面的研究。E-mail:wzf2718@opt.ac.cn" ]
- 基金信息：
  
  国家自然科学基金(61504167)
- DOI：10.37188/fgxb20204109.1158
  中图分类号：
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李波, 王贞福, 仇伯仓, 等. 高功率半导体激光阵列的高温特性机理[J]. 发光学报, 2020,41(9):1158-1164.

Bo LI, Zhen-fu WANG, Bo-cang QIU, et al. Analysis on High Temperature Characteristic of High Power Semiconductor Laser Array[J]. Chinese Journal of Luminescence, 2020,41(9):1158-1164.
李波, 王贞福, 仇伯仓, 等. 高功率半导体激光阵列的高温特性机理[J]. 发光学报, 2020,41(9):1158-1164. DOI： 10.37188/fgxb20204109.1158.

Bo LI, Zhen-fu WANG, Bo-cang QIU, et al. Analysis on High Temperature Characteristic of High Power Semiconductor Laser Array[J]. Chinese Journal of Luminescence, 2020,41(9):1158-1164. DOI： 10.37188/fgxb20204109.1158.

摘要

高峰值功率半导体激光阵列在高温工作条件中的应用需求日益凸显，本文以微通道封装的高峰值功率960 nm半导体激光阵列为研究对象，通过精密控温系统测试了其在10~80℃范围内峰值功率、电光转换效率、工作电压和光谱等一系列光电特性，结合理论分析，给出不同温度下电光转化效率的能量损耗分布。结果表明，工作温度从10℃升高到80℃后，电光转化效率从63.95%下降到47.68%，其中载流子泄漏损耗占比从1.93%上升到14.85%，是导致电光转换效率下降的主要因素。该研究对高峰值功率半导体激光器阵列在高温应用和激光芯片设计方面具有重要的指导意义。

Abstract

The demand for high peak power semiconductor laser arrays in high temperature working conditions is becoming more and more prominent. The high peak power 960 nm semiconductor laser arrays packaged by microchannel cooler were experimentally studied through the precision temperature control system. A series of output characteristics such as the peak power, power conversion efficiency, working voltage and spectrum are tested from 10℃ to 80℃, combined with theoretical analysis. The energy loss distribution of power conversion efficiency is given at different temperatures. The results show that the power conversion efficiency drops from 63.95% to 47.68% after the operating temperature increases from 10℃ to 80℃, and the proportion of carrier leakage losses increases from 1.93% to 14.85%, which is the main factor that causes the decline in the power conversion efficiency. This study has important guiding significance for high peak power semiconductor laser arrays in high temperature applications and laser chip design.

关键词

高功率半导体激光阵列高温微通道电光转化效率能量损耗分布

Keywords

high-power semiconductor laser arrayhigh temperaturemicrochannelpower conversion efficiencyenergy loss distribution

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