基于三明治结构的ZnO紫外光电探测器

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基于三明治结构的ZnO紫外光电探测器

器件制备及器件物理 | 更新时间：2020-09-10

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- 基于三明治结构的ZnO紫外光电探测器
- ZnO UV Photodetector Based on Sandwich Structure
- 发光学报 2020年41卷第9期页码：1153-1157
- 作者机构：
  
  长春理工大学空间光电国家地方联合工程研究中心, 吉林长春 130022
- 作者简介：
  
  [ "杨翘楚(1992-), 男, 吉林长春人, 博士研究生, 2015年于长春工业大学获得学士学位, 主要从事涡旋通信、紫外及红外光电探测领域的研究。E-mail:18686465338@163.com" ]
- 基金信息：
  
  国家自然科学基金(61905022)
- DOI：10.37188/fgxb20204109.1153
  中图分类号： O472.8
- 收稿日期：2020-07-03，
  
  录用日期：2020-7-20，
  
  纸质出版日期：2020-09
- 稿件说明：
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杨翘楚, 孙赫阳, 张福隆, 等. 基于三明治结构的ZnO紫外光电探测器[J]. 发光学报, 2020,41(9):1153-1157.

Qiao-chu YANG, He-yang SUN, Fu-long ZHANG, et al. ZnO UV Photodetector Based on Sandwich Structure[J]. Chinese journal of luminescence, 2020, 41(9): 1153-1157.
杨翘楚, 孙赫阳, 张福隆, 等. 基于三明治结构的ZnO紫外光电探测器[J]. 发光学报, 2020,41(9):1153-1157. DOI： 10.37188/fgxb20204109.1153.

Qiao-chu YANG, He-yang SUN, Fu-long ZHANG, et al. ZnO UV Photodetector Based on Sandwich Structure[J]. Chinese journal of luminescence, 2020, 41(9): 1153-1157. DOI： 10.37188/fgxb20204109.1153.

摘要

采用射频磁控溅射方法制备了三明治结构ZnO紫外光电探测器，即在传统金属-半导体-金属（MSM）单层ZnO紫外光电探测器的基础上再铺设一层ZnO薄膜，从而构建三明治器件结构。三明治结构ZnO紫外光电探测器响应度在5 V偏压下达到了0.05 A/W，暗电流为1.44×10

-5

A，器件的整体性相比较传统单层ZnO紫外光电探测器得到了明显的改善。这主要归因于金属与半导体接触的耗尽区可以直接吸收入射光，提高了入射光的吸收效率，避免了传统上层电极对入射光的遮蔽作用。

Abstract

ZnO UV photodetector is fabricated with the sandwich structure by radio frequency magnetron sputtering

based on the traditional metal semiconductor metal(MSM) single-layer ZnO UV photodetectors

another layer of ZnO film is laid to construct the sandwich device structure. At 5 V bias

the responsivity of the photodetector is 0.05 A/W

and the dark current is 1.44×10

-5

A. The integrity of the device is significantly improved compared with the traditional single-layer ZnO UV photodetector. This is mainly due to the fact that the depletion region of the metal semiconductor contact can directly absorb the incident light

improve the absorption efficiency of the incident light

and avoid the shielding effect of the traditional upper electrode to the incident light.

关键词

Keywords

references

WANG X, LIU K W, CHEN X, et al.. Highly wavelength-selective enhancement of responsivity in Ag nanoparticle-modified ZnO UV photodetector[J]. ACS Appl. Mater. Interfaces , 2017, 9(6):5574-5579.

ZHU H, SHAN C X, YAO B, et al.. High spectrum selectivity ultraviolet photodetector fabricated from an n-ZnO/p-GaN heterojunction[J]. J. Phys. Chem. C, 2008, 112(51):20546-20548.

PEI J A, JIANG D Y, ZHAO M, et al.. Controlled enhancement range of the responsivity in ZnO ultraviolet photodetectors by Pt nanoparticles[J] . Appl. Surf. Sci. , 2016, 389:1056-1061.

LAI W C, CHEN J T, YANG Y Y. ZnO-SiO 2 solar-blind photodetectors on flexible polyethersulfone substrate with organosilicon buffer layer[J]. Appl. Phys. Lett. , 2013, 102(19):191115-1-4.

HUANG Y, ZHANG L C, WANG J B, et al.. Enhanced photoresponse of n-ZnO/p-GaN heterojunction ultraviolet photodetector with high-quality CsPbBr 3 films grown by pulse laser deposition[J]. J. Alloys Compd. , 2019, 802:70-75.

HUANG G Z, ZHANG P P, BAI Z M. Self-powered UV-visible photodetectors based on ZnO/graphene/CdS/electrolyte heterojunctions[J]. J. Alloys Compd. , 2019, 776:346-352.

申德振, 梅增霞, 梁会力, 等.氧化锌基材料、异质结构及光电器件[J].发光学报, 2014, 35(1):1-60.

SHEN D Z, MEI Z X, LIANG H L, et al.. ZnO-based material, heterojunction and photoelctronic device[J]. Chin. J. Lumin. , 2014, 35(1):1-60. (in Chinese)

TIAN C G, JIANG D Y, LI B Z, et al.. Performance enhancement of ZnO UV photodetectors by surface plasmons[J]. ACS Appl. Mater. Interfaces , 2014, 6(3):2162-2166.

SUN L, JIANG D Y, ZHANG G Y, et al.. Responsivity enhancement of ZnO/Pt/MgZnO/SiO 2 and MgZnO/Pt/ZnO/SiO 2 structured ultraviolet detectors by surface plasmons in Pt nanoparticles[J]. J. Appl. Phys. , 2016, 119(4):044508-1-5.

FATHIMA N, PRADEEP N, BALAKRISHNAN J. Investigations of the effects of electrode geometry and mechanical stress on antimony doped zinc oxide nanostructures based MSM UV photodetectors fabricated on flexible substrates[J]. Solar Energy Mater. Solar Cells , 2019, 194:207-214.

INAMDAR S I, RAJPURE K Y. High-performance metal-semiconductor-metal UV photodetector based on spray deposited ZnO thin films[J]. J. Alloys Compd. , 2014, 595:55-59.

ZHAO M, WANG X, YANG G, et al.. Bias induced cutoff redshift of photocurrent in ZnO ultraviolet photodetectors[J]. Appl. Surf. Sci. , 2015, 359:432-434.

DU X L, MEI Z X, LIU Z L, et al.. Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors[J]. Adv. Mater. , 2009, 21(45):4625-4630.

JU Z G, SHAN C X, JIANG D Y, et al.. Mg x Zn 1- x O-based photodetectors covering the whole solar-blind spectrum range[J]. Appl. Phys. Lett. , 2008, 93(17):173505-1-3.

ZHOU X, JIANG D Y, ZHAO M, et al.. Polarization induced two-dimensional electron gas in ZnO/ZnMgO heterointerface for high-performance enhanced UV photodetector[J]. J. Alloys Compd. , 2020, 820:153416-1-7.

DUAN Y H, CONG M Y, JIANG D Y, et al.. ZnO thin film flexible UV photodetectors:regulation on the ZnO/Au interface by piezo-phototronic effect and performance outcomes[J]. Adv. Mater. Interfaces , 2020, 6(16):1900470-1-8.

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