基于三明治结构的ZnO紫外光电探测器
ZnO UV Photodetector Based on Sandwich Structure
- 发光学报 2020年41卷第9期 页码：1153-1157
- 作者机构：
1.长春理工大学 空间光电国家地方联合工程研究中心, 吉林 长春 130022
- 作者简介：
[ "杨翘楚(1992-), 男, 吉林长春人, 博士研究生, 2015年于长春工业大学获得学士学位, 主要从事涡旋通信、紫外及红外光电探测领域的研究。E-mail:18686465338@163.com" ]
- 基金信息：国家自然科学基金(61905022)
DOI：10.37188/fgxb20204109.1153
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杨翘楚, 孙赫阳, 张福隆, 等. 基于三明治结构的ZnO紫外光电探测器[J]. 发光学报, 2020,41(9):1153-1157.
Qiao-chu YANG, He-yang SUN, Fu-long ZHANG, et al. ZnO UV Photodetector Based on Sandwich Structure[J]. Chinese Journal of Luminescence, 2020,41(9):1153-1157.
杨翘楚, 孙赫阳, 张福隆, 等. 基于三明治结构的ZnO紫外光电探测器[J]. 发光学报, 2020,41(9):1153-1157. DOI： 10.37188/fgxb20204109.1153.
Qiao-chu YANG, He-yang SUN, Fu-long ZHANG, et al. ZnO UV Photodetector Based on Sandwich Structure[J]. Chinese Journal of Luminescence, 2020,41(9):1153-1157. DOI： 10.37188/fgxb20204109.1153.
摘要
采用射频磁控溅射方法制备了三明治结构ZnO紫外光电探测器，即在传统金属-半导体-金属（MSM）单层ZnO紫外光电探测器的基础上再铺设一层ZnO薄膜，从而构建三明治器件结构。三明治结构ZnO紫外光电探测器响应度在5 V偏压下达到了0.05 A/W，暗电流为1.44×10,-5, A，器件的整体性相比较传统单层ZnO紫外光电探测器得到了明显的改善。这主要归因于金属与半导体接触的耗尽区可以直接吸收入射光，提高了入射光的吸收效率，避免了传统上层电极对入射光的遮蔽作用。
Abstract
ZnO UV photodetector is fabricated with the sandwich structure by radio frequency magnetron sputtering, based on the traditional metal semiconductor metal(MSM) single-layer ZnO UV photodetectors, another layer of ZnO film is laid to construct the sandwich device structure. At 5 V bias, the responsivity of the photodetector is 0.05 A/W, and the dark current is 1.44×10,-5, A. The integrity of the device is significantly improved compared with the traditional single-layer ZnO UV photodetector. This is mainly due to the fact that the depletion region of the metal semiconductor contact can directly absorb the incident light, improve the absorption efficiency of the incident light, and avoid the shielding effect of the traditional upper electrode to the incident light.
关键词
三明治结构ZnO紫外光电探测器响应度
Keywords
sandwich structureZnO UV photodetectorsresponsivity
references
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