一种新型交联电子传输材料在OLED中的应用

高朝; 谢黎明; 苏文明; 崔铮

doi:10.37188/fgxb20204109.1093

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一种新型交联电子传输材料在OLED中的应用

材料合成及性能 | 更新时间：2020-09-10

- 一种新型交联电子传输材料在OLED中的应用
- Application of A Novel Cross-linkable Electron Transport Material in OLED
- 发光学报 2020年41卷第9期页码：1093-1101
- 作者机构：
  
  1.中国科学院苏州纳米技术与纳米仿生研究所印刷电子技术研究中心, 江苏苏州 215123
  2.上海科技大学物质科学与技术学院, 上海 201210
- 作者简介：
  
  [ "高朝(1992-), 男, 湖北黄冈人, 硕士研究生, 2013年于湖北工程学院获得学士学位, 主要从事OLED材料的合成以及器件等方面的研究。E-mail:zgao2018@sinano.ac.cn" ]
  [ "苏文明(1978-), 男, 湖南邵东人, 博士, 研究员, 2007年于中国科学院长春光学精密机械与物理研究所获得博士学位, 主要从事印刷发光与显示等方面的研究E-mail:wmsu2008@sinano.ac.cn" ]
- 基金信息：
  
  National Key Research and Development Program of China
- DOI：10.37188/fgxb20204109.1093
  中图分类号： O482.31
- 收稿：2020-06-18，
  
  录用：2020-7-6，
  
  纸质出版：2020-09
- 稿件说明：
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高朝, 谢黎明, 苏文明, 等. 一种新型交联电子传输材料在OLED中的应用[J]. 发光学报, 2020,41(9):1093-1101.

Zhao GAO, Li-ming XIE, Wen-ming SU, et al. Application of A Novel Cross-linkable Electron Transport Material in OLED[J]. Chinese Journal of Luminescence, 2020, 41(9): 1093-1101.
高朝, 谢黎明, 苏文明, 等. 一种新型交联电子传输材料在OLED中的应用[J]. 发光学报, 2020,41(9):1093-1101. DOI： 10.37188/fgxb20204109.1093.

Zhao GAO, Li-ming XIE, Wen-ming SU, et al. Application of A Novel Cross-linkable Electron Transport Material in OLED[J]. Chinese Journal of Luminescence, 2020, 41(9): 1093-1101. DOI： 10.37188/fgxb20204109.1093.

摘要

设计并合成了一种新型的可交联电子传输材料TV-T2T。该材料经过热交联之后具有优异的抗溶剂特性，并且TV-T2T的LUMO能级为-3.5 eV，这将更有利于电子从ZnO层注入到发光层中。另外，溶液法制备的三层薄膜ZnO/TV-T2T/2，6-Dczppy:Ir（mppy）

，其粗糙度低至2.27 nm，优于未加入TV-T2T电子传输层的双层薄膜（2.37 nm），可以有效减少漏电流的产生。随后，将TV-T2T应用于三层溶液法制备的倒置有机发光二极管中，获得了5.1% EQE的器件性能，是不加TV-T2T的器件性能（EQE为3.0%）的1.7倍。

Abstract

A new cross-linkable electron transport layer(ETL) material

6-tris(4'-vinyl-[1

1'-biphenyl]-3-yl)-1

5-triazine(TV-T2T) was designed and synthesized. The film formation of the cross-linkable material TV-T2T has the excellent solvent resistance. The lowest unoccupied molecular orbital(LUMO) level of TV-T2T is -3.5 eV

which could deliver efficient charge injection from the zinc oxide(ZnO) to the emission layer. In addition

the surface roughness of 2.27 nm in the film of triple-layer ZnO/TV-T2T/2

6-Dczppy:Ir(mppy)

is lower than that of the film without TV-T2T(2.39 nm)

resulting in a reduced leakage current. The solution-processed inverted OLED with ETL material TV-T2T

achieved an EQE of 5.1% compared to the 3.0% EQE of the device without TV-T2T layer

demonstrating an improvement of 1.7-fold for the inverted OLEDs.

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references

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