InGaAs/GaAs/InGaP量子阱激光器的温度电压特性

李金友; 王海龙; 杨锦; 曹春芳; 赵旭熠; 于文富; 龚谦

doi:10.37188/fgxb20204108.0971

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InGaAs/GaAs/InGaP量子阱激光器的温度电压特性

器件制备及器件物理 | 更新时间：2020-09-10

- InGaAs/GaAs/InGaP量子阱激光器的温度电压特性
- Voltage-temperature Characteristics of InGaAs/GaAs/InGaP Quantum Well Laser
- 发光学报 2020年41卷第8期页码：971-976
- 作者机构：
  
  1.曲阜师范大学物理工程学院山东省激光偏光与信息技术重点实验室, 山东曲阜 273165
  2.中国科学院大学信息功能材料国家重点实验室, 上海 200050
  3.中国科学院上海微系统与信息技术研究所, 上海 200050
- 作者简介：
  
  [ "李金友(1993-), 男, 山东潍坊人, 硕士研究生, 2016年于曲阜师范大学获得学士学位, 主要从事半导体激光器方面的研究。E-mail:1603743020@qq.com" ]
  [ "王海龙(1971-), 男, 山东莘县人, 博士, 教授, 博士研究生导师, 2000年于中国科学院半导体研究所获得博士学位, 主要从事半导体光电子学方面的研究。E-mail:hlwang@qfnu.edu.cn" ]
  [ "龚谦(1971-), 男, 四川新都人, 博士, 研究员, 博士研究生导师, 1998年于中国科学院半导体研究所获得博士学位, 主要从事半导体材料生长与器件制备的研究。E-mail:qgong@mail.sim.ac.cn" ]
- 基金信息：
  
  国家自然科学基金(61674096);山东省自然科学基金(ZR2019PA010)
- DOI：10.37188/fgxb20204108.0971
  中图分类号： TN248.4;TN365
- 纸质出版日期：2020-8，
  
  收稿日期：2020-4-20，
  
  录用日期：2020-5-20
扫描看全文
李金友, 王海龙, 杨锦, 等. InGaAs/GaAs/InGaP量子阱激光器的温度电压特性[J]. 发光学报, 2020,41(8):971-976.

Jin-you LI, Hai-long WANG, Jin YANG, et al. Voltage-temperature Characteristics of InGaAs/GaAs/InGaP Quantum Well Laser[J]. Chinese Journal of Luminescence, 2020,41(8):971-976.
李金友, 王海龙, 杨锦, 等. InGaAs/GaAs/InGaP量子阱激光器的温度电压特性[J]. 发光学报, 2020,41(8):971-976. DOI： 10.37188/fgxb20204108.0971.

Jin-you LI, Hai-long WANG, Jin YANG, et al. Voltage-temperature Characteristics of InGaAs/GaAs/InGaP Quantum Well Laser[J]. Chinese Journal of Luminescence, 2020,41(8):971-976. DOI： 10.37188/fgxb20204108.0971.

摘要

研究了InGaAs/GaAs/InGaP量子阱激光器在不同温度下的电流-电压特性，并建立了一个理论模型进行描述。实验所用激光器腔长为0.3 mm，脊条宽度为3 μm。实验测量得到该激光器在15~100 K的电压温度系数（d

）为7.87~8.32 mV/K，在100~300 K的电压温度系数为2.93~3.17 mV/K。由理论模型计算得到该激光器在15~100 K的电压温度系数为2.56~2.75 mV/K，在100~300 K的电压温度系数为3.91~4.15 mV/K。在100~300 K，实验测量与理论模型计算得出的电压温度系数接近，理论模型能较好地模拟激光器的温度电压特性；但在15~100 K相差较大，还需要进一步完善。

Abstract

The current-voltage characteristics of an InGaAs/GaAs/InGaP quantum well laser at different temperatures have been investigated. A theoretical model has been developed to simulate the current-voltage characteristics of the laser. The length of the laser cavity utilized in the experiment is 0.3 mm

and the ridge width of the laser is 3 μm. Experimental voltage-temperature coefficients (d

) of the laser are from 7.87 to 8.32 mV/K within 15-100 K

and are from 2.93 to 3.17 mV/K within 100-300 K. Theoretical voltage-temperature coefficients of the laser in the range of 15-100 K are 2.56 to 2.75 mV/K

and in the range of 100-300 K are 3.91 to 4.15 mV/K. Within 100-300 K

the theoretical voltage-temperature coefficients are close to the experimental coefficients. However

within 15-100 K

there are large differences between the theoretical coefficients and experimental ones

which need to be improved.

关键词

量子阱激光器InGaAs/GaAs/InGaP低温温度电压特性

Keywords

quantum well laserInGaAs/GaAs/InGaPlow temperaturevoltage-temperature characteristics

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