“In the realm of optoelectronics, a breakthrough has been made by integrating 3D gallium arsenide nanowires with 0D WS2 quantum dots to create a high-sensitivity photodetector. This novel heterostructure not only enhances performance through type II energy bands but also sets a new precedent for future photodetector development. The fabricated device, under 660 nm laser excitation, demonstrates exceptional metrics, including a responsivity of 368.07 A/W and a detectivity of 2.7×10^12 Jones, addressing the issue of surface faults in GaAs nanowires and propelling the advancement of optoelectronic devices.”