1.哈尔滨工业大学 材料科学与工程学院, 黑龙江 哈尔滨 150001
[ "韩鹏(1999-),男,黑龙江佳木斯人,硕士研究生, 2021年于哈尔滨工程大学获得学士学位,主要从事钙钛矿材料与光电器件的研究。E-mail: hithp2022@163.com" ]
[ "张勇(1980-),男,河南周口人,博士,教授,博士生导师,2007年于华南理工大学获得博士学位,主要从事有机光电材料与器件的研究。 E-mail: yongzhang@hit.edu.cn" ]
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韩鹏,刘鹤,国凤云等.BiI3修饰Cs3Bi2I9自供能光电化学型探测器制备及其性能[J].发光学报,2023,44(08):1471-1478.
HAN Peng,LIU He,GUO Fengyun,et al.Fabrication and Performance of Self-powered Photoelectrochemical Detectors Based on BiI3 Modified Cs3Bi2I9[J].Chinese Journal of Luminescence,2023,44(08):1471-1478.
韩鹏,刘鹤,国凤云等.BiI3修饰Cs3Bi2I9自供能光电化学型探测器制备及其性能[J].发光学报,2023,44(08):1471-1478. DOI: 10.37188/CJL.20230063.
HAN Peng,LIU He,GUO Fengyun,et al.Fabrication and Performance of Self-powered Photoelectrochemical Detectors Based on BiI3 Modified Cs3Bi2I9[J].Chinese Journal of Luminescence,2023,44(08):1471-1478. DOI: 10.37188/CJL.20230063.
在溶液法合成Cs,3,Bi,2,I,9,前驱体溶液的基础上,采用添加BiI,3,修饰Cs,3,Bi,2,I,9,溶液的方法后得到Cs,3,Bi,2,I,9,/BiI,3,薄膜并制备出具有自供能特性的Cs,3,Bi,2,I,9,/BiI,3,薄膜光电化学型探测器。结果表明,添加的BiI,3,以第二相形式存在于Cs,3,Bi,2,I,9,薄膜中,形成两相混合结构。在紫外光(365 nm)单色光照射下,Cs,3,Bi,2,I,9,/BiI,3,探测器的开关比达到3 198,响应度和探测率分别为2.85×10,-3, A/W和3.77×10,10, Jones。在绿光(530 nm)单色光照射下,Cs,3,Bi,2,I,9,/BiI,3,探测器的开关比达到1 172,响应度和探测率分别为6.9×10,-4, A/W和1.76×10,10, Jones,同时展现出红光波段(625 nm)的良好响应。相较于Cs,3,Bi,2,I,9,探测器,Cs,3,Bi,2,I,9,/BiI,3,器件探测性能均有大幅度提高,归因于BiI,3,对非辐射缺陷的钝化作用。本工作首次尝试将Cs,3,Bi,2,I,9,应用在光电化学型结构探测器中,通过BiI,3,的修饰成功提高了器件性能,为低毒铋基钙钛矿的光电探测应用性能提升提供了新思路。
Based on the synthesis of Cs,3,Bi,2,I,9, precursor solution by using solution method, Cs,3,Bi,2,I,9,/BiI,3, thin films were obtained by adding BiI,3, to modify Cs,3,Bi,2,I,9, solution, and the Cs,3,Bi,2,I,9,/BiI,3, photodetectors based on the device types of photoelectrochemical detectors with self-powered properties were also constructed. It is found that the added BiI,3, exists in the form of the second phase, forming a two-phase mixed structure. Under illumination of ultraviolet(365 nm) monochromatic light, Cs,3,Bi,2,I,9,/BiI,3, photodetectors show on-off ratio of 3 198, corresponding to a response of 2.85×10,-3, A/W and a detectivity of 3.77×10,10, Jones. While under illumination of green light(530 nm), the device also exhibits on-off ratio of 1 172, a response of 6.9×10,-4, A/W and a detectivity of 1.76×10,10, Jones. Compared with simple Cs,3,Bi,2,I,9, photodetectors, the detection performance of Cs,3,Bi,2,I,9,/BiI,3, photodetectors has been greatly improved, which is attributed to the passivation of BiI,3, on non-radiation defects. It is the first time to apply Cs,3,Bi,2,I,9, in the photoelectrochemical structure detector. The modification of BiI,3, successfully improves the device performance, which provides a new idea for improving the performance of low-toxic bismuth-based perovskite photodetection application.
Cs3Bi2I9光电化学型探测器自供能探测BiI3第二相
Cs3Bi2I9photoelectrochemical detectorsself-powered detectionBiI3second phase
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