Micro-LED全彩显示中量子点膜层制备及光转换效率优化

卢子元; 庄永漳; 仉旭; 王涛; 谭毅; 王倩静; 张晓东; 蔡勇; 张宝顺; 张晶

doi:10.37188/CJL.20210368

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Micro-LED全彩显示中量子点膜层制备及光转换效率优化

发光产业及技术前沿 | 更新时间：2022-04-07

- Micro-LED全彩显示中量子点膜层制备及光转换效率优化
  增强出版
- Synthesis and Conversion Efficiency Optimization of Quantum Dots Layer for Full-color Micro-LED Display
- 发光学报 2022年43卷第3期页码：421-429
- 作者机构：
  
  1.长春理工大学　光电工程学院，吉林　长春　130022
  2.中国科学院苏州纳米技术与纳米仿生研究所　纳米加工平台，江苏　苏州　215123
  3.中国科学技术大学　纳米技术与纳米仿生学院，安徽　合肥　230026
- 作者简介：
  
  [ "卢子元(1996-)，男，吉林辽源人，硕士研究生，2018年于长春理工大学光电信息学院获得学士学位，主要从事量子点光致发光的研究。E-mail: zylu2020@sinano.ac.cn" ]
  [ "张宝顺(1969-)，男，吉林双辽人，博士，研究员，2003年于中国科学院半导体研究所获得博士学位，主要从事半导体材料生长和器件工艺的研究。E-mail: bszhang2006@sinano.ac.cn" ]
  [ "张晶(1975-)，男，吉林松原人，博士，副研究员，2011年于日本德岛大学获得博士学位，主要从事半导体光电子器件设计及工艺的研究。E-mail: zhangjingcust@cust.edu.cn" ]
- 基金信息：
  
  国家自然科学基金(U1830112);江苏省自然科学基金(BK20191195)
- DOI：10.37188/CJL.20210368
  中图分类号： O482.31
- 纸质出版日期：2022-03，
  
  收稿日期：2021-11-25，
  
  修回日期：2021-12-19，
- 稿件说明：
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卢子元, 庄永漳, 仉旭, 等. Micro-LED全彩显示中量子点膜层制备及光转换效率优化[J]. 发光学报, 2022,43(3):421-429.

ZI-YUAN LU, WING-CHEUNG CHONG, XU ZHANG, et al. Synthesis and Conversion Efficiency Optimization of Quantum Dots Layer for Full-color Micro-LED Display. [J]. Chinese journal of luminescence, 2022, 43(3): 421-429.
卢子元, 庄永漳, 仉旭, 等. Micro-LED全彩显示中量子点膜层制备及光转换效率优化[J]. 发光学报, 2022,43(3):421-429. DOI： 10.37188/CJL.20210368.

ZI-YUAN LU, WING-CHEUNG CHONG, XU ZHANG, et al. Synthesis and Conversion Efficiency Optimization of Quantum Dots Layer for Full-color Micro-LED Display. [J]. Chinese journal of luminescence, 2022, 43(3): 421-429. DOI： 10.37188/CJL.20210368.

摘要

将表面配体改性的CdSe/ZnS量子点(Quantum dots)和光刻胶混合，进而采用光刻工艺在InGaN/GaN蓝光Micro-LED上实现了最小尺寸为3 μm的高分辨率、高光效的量子点颜色转换膜层。同时系统研究了不同厚度和混合比例的量子点膜层的吸收/发射光谱及光致发光量子产率(PLQY)。为优化光转换效率，量子点膜层中加入了TiO

散射粒子以提高蓝光的吸收效率。更进一步地，经过设计引入分布式布拉格反射镜(DBR)，使得未被吸收的蓝光光子回弹到量子点转换膜层，这不仅提升了蓝光吸收效率，也增强了转换色彩的饱和度。同时采用了热激发方式来提升量子点的光致发光量子产率。为得到更高的显示对比度和色彩饱和度，引入黑色光阻矩阵来削弱临近图形之间的颜色串扰。实验结果表明，该量子点膜层可以用光刻技术实现高分辨率、高光效的颜色转换图层，为单片全彩化Micro-LED显示的发展提供了新颖可靠的技术路线。

Abstract

In this paper

colloidal CdSe/ZnS quantum dots(QDs) with modified ligands are dispersed in photoresist and then patterned on blue InGaN/GaN Micro-LED by lithography process

demonstrating a high-resolution and highly efficient color conversion layer with critical dimension of 3 μm. The absorption/emission spectrum and photoluminescence quantum yield(PLQY) of the QDs color conversion layer(CCL) with different thickness and mixing ratio are systematically studied. To improve the conversion efficiency

TiO

scattering particles are diffused into the QDs CCL to enhance the blue light absorption. Moreover

a tailored distributed Bragg reflector(DBR) is introduced to make the unabsorbed blue photons bounce back to the QDs CCL

which not only amplifies the blue light absorption but also strengthens the saturation of the converted colors. The PLQY of the QDs CCL is even increased after appropriate hard baking. Black matrix material is applied to suppress the light crosstalk among neighboring pixels

thus higher contrast and color saturation are obtained. The promising experimental results prove that the QDs photoresist is feasible to construct a high-resolution and highly efficient color conversion layer by lithography process

paving a novel and reliable pathway to monolithic full-color Micro-LED displays.

关键词

Micro-LED量子点分布式布拉格反射镜(DBR)颜色转换散射粒子

Keywords

Micro-LEDquantum dotdistributed Bragg reflector(DBR)color conversionscattering particles

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