CsPbI<sub>3</sub>/ZnO/GaN纳米复合结构制备及其电致发光特性

周啸宇; 张晶; 赵风周; 楚新波; 贺顺立; 周福旺; 严汝阳; 薛晓娥; 任志超; 郑琪颖; 张立春

doi:10.37188/CJL.20210225

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CsPbI₃/ZnO/GaN纳米复合结构制备及其电致发光特性

材料合成及性能 | 更新时间：2021-11-23

- CsPbI₃/ZnO/GaN纳米复合结构制备及其电致发光特性
  增强出版
- Preparation and Electroluminescence Properties of CsPbI₃/ZnO/GaN Nano-composite Structure
- 发光学报 2021年42卷第11期页码：1748-1755
- 作者机构：
  
  1.鲁东大学　物理与光电工程学院，山东　烟台　264025
  2.中国科学院　长春光学精密机械与物理研究所，吉林　长春　130033
- 作者简介：
  
  [ "周啸宇(1995-)，男，山东东营人，硕士研究生，2018年于鲁东大学获得学士学位，主要从事新能源材料制备及光电器件应用的研究。E-mail: phyzhouxy@163.com" ]
  [ "赵风周(1976-)，男，山东莱州人，博士，副教授，硕士研究生导师，2006年于中国科学技术大学获得博士学位，主要从事紫外光电材料与器件、光学材料中物理问题及固体发光的研究。E-mail: fzzhao@ldu.edu.cn" ]
  [ "张立春(1982-)，男，山东滨州人，博士，副教授，硕士研究生导师，2013年于曲阜师范大学获得博士学位，主要从事宽禁带半导体薄膜材料生长及光电器件制备、低维纳米新能源材料制备及光电器件应用的研究。E-mail: phzlc@63.com" ]
- 基金信息：
  
  国家自然科学基金(62075092);山东省自然科学基金(ZR2019MA066);烟台市校地融合发展项目(2021XKZY03;2020XDRHXMP11)
- DOI：10.37188/CJL.20210225
  中图分类号： O482.31
- 纸质出版日期：2021-11-01，
  
  收稿日期：2021-06-29，
  
  修回日期：2021-07-12，
- 稿件说明：
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周啸宇, 张晶, 赵风周, 等. CsPbI₃/ZnO/GaN纳米复合结构制备及其电致发光特性[J]. 发光学报, 2021,42(11):1748-1755.

XIAO-YU ZHOU, JING ZHANG, FENG-ZHOU ZHAO, et al. Preparation and Electroluminescence Properties of CsPbI₃/ZnO/GaN Nano-composite Structure. [J]. Chinese journal of luminescence, 2021, 42(11): 1748-1755.
周啸宇, 张晶, 赵风周, 等. CsPbI₃/ZnO/GaN纳米复合结构制备及其电致发光特性[J]. 发光学报, 2021,42(11):1748-1755. DOI： 10.37188/CJL.20210225.

XIAO-YU ZHOU, JING ZHANG, FENG-ZHOU ZHAO, et al. Preparation and Electroluminescence Properties of CsPbI₃/ZnO/GaN Nano-composite Structure. [J]. Chinese journal of luminescence, 2021, 42(11): 1748-1755. DOI： 10.37188/CJL.20210225.

摘要

采用高压脉冲激光沉积技术和溶液旋涂法在p-GaN衬底上先后制备了ZnO纳米线和CsPbI

纳米结构，通过X射线衍射、扫描电子显微镜和光致发光研究了样品的结构、形貌和光学性能。利用该结构制备的发光二极管在正向电压下表现出较强的宽波段可见光发射，电致发光光谱由440 nm的蓝光、500~650 nm的黄绿光和705 nm的红光组成。实验发现，随着注入电流的增大，器件的电致发光颜色从接近白光逐渐变蓝，并且随着CsPbI

旋涂转速的降低，器件的发光颜色也从蓝光逐渐变为黄光。最后，利用能带模型详细讨论了复合结构的电致发光机理，解释了器件发光光谱随注入电流和旋涂转速变化的原因。这种CsPbI

/ZnO纳米复合结构可以实现光谱色坐标从蓝光到白光的调节，为单芯片白光发射器件的制备提供了方案。

Abstract

Herein

ZnO nanowires and CsPbI

nanostructures were prepared on p-GaN substrates by high pressure pulsed laser deposition and solution spin coating

sequentially. The structure

morphology and optical properties were investigated by X-ray diffraction

scanning electron microscopy and photoluminescence. The light-emitting diode(LED) fabricated with the nano-composite structure exhibited strong visible wide band light emission under forward bias

the electroluminescence(EL) spectrum consists of a blue peak at 440 nm

the yellow-green emission band at 500-650 nm and a red peak at 705 nm. With the increase of the injection current

the EL color of the device changes from nearly white to blue gradually

and with the decrease of the spinning speed of CsPbI

the EL color of the device changes from blue light to yellow light gradually. At last

the EL mechanisms of heterojunction LEDs were discussed using the band diagram

and the reason why the emission spectrum of the device changes with the injection current and spin coating speed was explained. The CsPbI

/ZnO nano-composite can adjust the spectral color coordinates from blue to white

which provides a new way for single chip white LED.

关键词

ZnO纳米线CsPbI3电致发光白光LED

Keywords

ZnO nanowiresCsPbI3electroluminescencewhite light-emitting diode

references

NAKAMURAS , FASOL G. The Blue Laser Diode: GaN Based Light Emitters and Lasers[M]. Berlin: Springer Press, 1996: 1-5.

LIU T, LI D, HU H, et al. Piezo-phototronic effect in InGaN/GaN semi-floating micro-disk LED arrays[J]. Nano Energy, 2020, 67: 104218.

ZHANG R, WANG B Y, ZHOU P, et al. A novel Ce3+∶Y3Al5O12 and Eu2+∶Sr2Si5N8 dual phosphors-in-glass thick film for warm white LED[J]. Mater. Lett., 2018, 221: 31-34.

BAEK S D, PORTE Y, KIM Y C, et al. Fabrication of ZnO homojunction-based color-switchable bidirectional LEDs by using a hydrothermal growth method[J]. J. Mater. Chem. C, 2017, 5(36): 9479-9487.

HUANG Y, ZHOU X Y, ZHANG L C, et al. Tunable electroluminescence from an n-ZnO/p-GaN heterojunction with a CsPbBr3 interlayer grown by pulsed laser deposition[J]. J. Mater. Chem. C, 2020, 8(35): 12240-12246.

KAEWMEECHAIC , LAOSIRITAWORN Y, JAROENJITTICHAI A P. DFT band alignment of polar and nonpolar GaN/MgGeN2, ZnO/MgGeN2 and GaN/ZnO heterostructures for optoelectronic device design[J]. Appl. Surf. Sci., 2020, 533: 147503.

NIU S R, ZHAO F Z, HUANG Y, et al. Enhanced p-CuI/n-ZnO photodetector based on thermal evaporated CuI and pulsed laser deposited ZnO nanowires[J]. Opt. Lett., 2020, 45(2): 559-562.

JEONG S, OH S K, RYOU J H, et al. Monolithic inorganic ZnO/GaN semiconductors heterojunction white light-emitting diodes[J]. ACS Appl. Mater. Interfaces, 2018, 10(4): 3761-3768.

KIM J W, LEE S J, BISWAS P, et al. Solution-processed n-ZnO nanorod/p-Co3O4 nanoplate heterojunction light-emitting diode[J]. Appl. Surf. Sci., 2017, 406: 192-198.

JEONGB , HAN H, CHOI Y J, et al. All-inorganic CsPbI3 perovskite phase-stabilized by poly(ethylene oxide) for red-light-emitting diodes[J]. Adv. Funct. Mater., 2018, 28(16): 1706401.

DUTTA A, PRADHAN N. Phase-stable red-emitting CsPbI3 nanocrystals:successes and challenges[J]. ACS Energy Lett., 2019, 4(3): 709-719.

ZHANG H X, WU C X, ZHANG C R, et al. p-GaN/n-ZnO nanorod/CsPbBr3 quantum dots decorated with ZnO nanoseeds for light-emitting diodes[J]. ACS Appl. Nano Mater., 2019, 2(12): 7661-7668.

LI Z Z, ZHOU F G, WANG Q, et al. Approaches for thermodynamically stabilized CsPbI3 solar cells[J]. Nano Energy, 2020, 71: 104634.

ZHAO H, XU J, ZHOU S J, et al. Preparation of tortuous 3D γ-CsPbI3 films at low temperature by CaI2 as dopant for highly efficient perovskite solar cells[J]. Adv. Funct. Mater., 2019, 29(27): 1808986.

ZHANG L C, LI Q S, SHANG L, et al. Electroluminescence from n-ZnO∶Ga/p-GaN heterojunction light-emitting diodes with different interfacial layers[J]. J. Phys. D:Appl. Phys., 2012, 45(48): 485103.

ZHANG L C, LI Q S, SHANG L, et al. Improvement of UV electroluminescence of n-ZnO/p-GaN heterojunction LED by ZnS interlayer[J]. Opt. Express, 2013, 21(14): 16578-16583.

ALVI N H, UL HASAN K, NUR O, et al. The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes[J]. Nanoscale Res. Lett., 2011, 6(1): 130-1-7.

LUO P F, XIA W, ZHOU S W, et al. Solvent engineering for ambient-air-processed, phase-stable CsPbI3 in perovskite solar cells[J]. J. Phys. Chem. Lett., 2016, 7(18): 3603-3608.

DARMAWAN Y A, YAMAUCHI M, MASUO S. In situ observation of a photodegradation-induced blueshift in perovskite nanocrystals using single-particle spectroscopy combined with atomic force microscopy[J]. J. Phys. Chem. C, 2020, 124(34): 18770-18776.

HUO C Q, ZENG H, CAO P J, et al. Tailoring of electroluminescence from n-ZnO/p-GaN heterojunctions[J]. J. Lumin., 2018, 198: 400-404.

ALVI N H, WILLANDER M, NUR O. The effect of the post-growth annealing on the electroluminescence properties of n-ZnO nanorods/p-GaN light emitting diodes[J]. Superlatt. Microstruct., 2010, 47(6): 754-761.

WANG Y, YANG L, CHEN H Y, et al. White LED based on CsPbBr3 nanocrystal phosphors via a facile two-step solution synthesis route[J]. Mater. Res. Bull., 2018, 102: 48-52.

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CsPbI3/ZnO/GaN纳米复合结构制备及其电致发光特性

Preparation and Electroluminescence Properties of CsPbI3/ZnO/GaN Nano-composite Structure

DOI：10.37188/CJL.20210225

摘要

Abstract

关键词

Keywords

references

CsPbI₃/ZnO/GaN纳米复合结构制备及其电致发光特性

Preparation and Electroluminescence Properties of CsPbI₃/ZnO/GaN Nano-composite Structure